公开(公告)号：US6100954A

公开(公告)日：2000-08-08

申请号：US826804

申请日：1997-03-25

Applicant: Jeong-Hyun Kim ,  Woong-Kwon Kim ,  Ki-Hyun Lyu ,  Sung-Il Park ,  Kyoung-Nam Lim ,  Hoo-Young Lee

Inventor： Jeong-Hyun Kim ,  Woong-Kwon Kim ,  Ki-Hyun Lyu ,  Sung-Il Park ,  Kyoung-Nam Lim ,  Hoo-Young Lee

IPC: G02F1/136 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/336 ,  H01L23/29 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/66757 ,  G02F1/133345 ,  H01L21/28008 ,  H01L21/28158 ,  H01L23/293 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/78636 ,  H01L29/78669 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2202/104 ,  H01L2924/0002 ,  H01L2924/12044

Abstract: A thin film transistor substrate for a liquid crystal display includes a substrate; a thin film transistor over the substrate, the thin film transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer; and a protection film over the thin film transistor, the protection film including at least one of fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB.

Abstract translation: 一种用于液晶显示器的薄膜晶体管衬底包括：衬底; 薄膜晶体管，该薄膜晶体管具有栅极，源极，漏极，半导体层和栅极绝缘层; 以及保护膜，该保护膜包括氟化聚酰亚胺，特氟隆，电解，氟多氟醚，氟化聚对二甲苯，PFCB和BCB中的至少一种。

公开(公告)号：US06001539A

公开(公告)日：1999-12-14

申请号：US831717

申请日：1997-04-01

Applicant: Ki-Hyun Lyu ,  Hoo-Young Lee

Inventor： Ki-Hyun Lyu ,  Hoo-Young Lee

IPC: H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  G02F1/1333

CPC classification number: H01L27/1214 ,  H01L29/66765

Abstract: A method of manufacturing an LCD on a substrate, the method comprising the steps of forming a thin film transistor on the substrate; forming an organic passivation layer over the thin film transistor; forming a patterned photoresist over the organic passivation layer; etching the organic passivation layer to form a contact hole over one of source and drain of the transistor; removing the photoresist; forming an SiO.sub.2 layer at a surface of the organic passivation layer by O.sub.2 ashing; and forming a pixel electrode contacting one of the source and drain of the transistor through the contact hole.

Abstract translation: 一种在基板上制造LCD的方法，所述方法包括以下步骤：在所述基板上形成薄膜晶体管; 在所述薄膜晶体管上形成有机钝化层; 在所述有机钝化层上形成图案化的光致抗蚀剂; 蚀刻有机钝化层以在晶体管的源极和漏极之一上形成接触孔; 去除光致抗蚀剂; 通过O2灰化在有机钝化层的表面上形成SiO 2层; 以及形成通过所述接触孔接触所述晶体管的源极和漏极之一的像素电极。