公开(公告)号：US08373833B2

公开(公告)日：2013-02-12

申请号：US13410529

申请日：2012-03-02

申请人： Sang-Moo Song ,  In-Ho Hwang ,  Dae-Lim Park ,  Ki-Hyun Lyu

发明人： Sang-Moo Song ,  In-Ho Hwang ,  Dae-Lim Park ,  Ki-Hyun Lyu

IPC分类号： G02F1/1343

CPC分类号： G02F1/133707 ,  G02F2001/134372

摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines in each pixel region; a pixel electrode having a plate shape in each pixel region, and connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in each pixel region, wherein a center portion of each opening overlaps the pixel electrode, and both ends along a major axis of each opening protrude beyond the pixel electrode.

摘要翻译： 用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 多条数据线与所述多条栅极线交叉以限定多个像素区域; 电连接到每个像素区域中的栅极和数据线的薄膜晶体管; 像素电极，其在每个像素区域中具有板形，并且连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在第一钝化层上的公共电极，并且在每个像素区域中具有多个条形开口，其中每个开口的中心部分与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素 电极。

公开(公告)号：US20120218488A1

公开(公告)日：2012-08-30

申请号：US13410529

申请日：2012-03-02

申请人： Sang-Moo Song ,  In-Ho Hwang ,  Dae-Lim Park ,  Ki-Hyun Lyu

发明人： Sang-Moo Song ,  In-Ho Hwang ,  Dae-Lim Park ,  Ki-Hyun Lyu

IPC分类号： G02F1/136 ,  H01L33/02

CPC分类号： G02F1/133707 ,  G02F2001/134372

摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines in each pixel region; a pixel electrode having a plate shape in each pixel region, and connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in each pixel region, wherein a center portion of each opening overlaps the pixel electrode, and both ends along a major axis of each opening protrude beyond the pixel electrode.

摘要翻译： 用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 多条数据线与所述多条栅极线交叉以限定多个像素区域; 电连接到每个像素区域中的栅极和数据线的薄膜晶体管; 像素电极，其在每个像素区域中具有板形，并且连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在第一钝化层上的公共电极，并且在每个像素区域中具有多个条形开口，其中每个开口的中心部分与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素 电极。

公开(公告)号：US08243235B2

公开(公告)日：2012-08-14

申请号：US12270381

申请日：2008-11-13

申请人： Ki-Hyun Lyu ,  Dae-Hyun Kim ,  Jun-Yeob Lee ,  Sang-Moo Song ,  Sang-Bum Ko ,  In-Ho Hwang ,  Su-Hong Cho

发明人： Ki-Hyun Lyu ,  Dae-Hyun Kim ,  Jun-Yeob Lee ,  Sang-Moo Song ,  Sang-Bum Ko ,  In-Ho Hwang ,  Su-Hong Cho

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/133512 ,  G02F1/133514 ,  G02F1/134363

摘要： A liquid crystal display device includes an array substrate including gate and data line on a first substrate to define first and second sub-pixel regions and a thin film transistor in each of the first and second sub-pixel regions; a color filter substrate including a color filter layer including first and second color filters corresponding to the first and second sub-pixel regions, respectively, a portion of the first color filter overlapping a portion of the second color filter over the data line; and a liquid crystal layer between the array substrate and the color filter substrate.

摘要翻译： 液晶显示装置包括在第一基板上包括栅极和数据线的阵列基板，用于限定第一和第二子像素区域以及在第一和第二子像素区域中的每一个中的薄膜晶体管; 滤色器基板，包括分别包括与第一和第二子像素区域对应的第一和第二滤色器的滤色器层，第一滤色器的一部分与数据线上的第二滤色器的一部分重叠; 以及阵列基板和滤色器基板之间的液晶层。

公开(公告)号：US20090225250A1

公开(公告)日：2009-09-10

申请号：US12390152

申请日：2009-02-20

申请人： Ki-Hyun LYU ,  In-Duk Song ,  Dae-Hyun Won

发明人： Ki-Hyun LYU ,  In-Duk Song ,  Dae-Hyun Won

IPC分类号： G02F1/1368 ,  G02F1/1343 ,  G02F1/13

CPC分类号： G02F1/134363 ,  G02F2001/134318 ,  G02F2001/134381 ,  G02F2001/13606 ,  G02F2001/136218 ,  G02F2201/40

摘要： An array substrate for an in-plane switching mode liquid crystal display device includes: a substrate; a gate line on the substrate; first and second common lines parallel to and spaced apart from the gate line; a data line crossing the gate line to define a pixel region; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor, the pixel electrode having a plate shape; a plurality of common electrodes connected between the first and second common lines, the plurality of common electrodes overlapping the pixel electrode; and first and second shielding electrodes parallel to the data line, the first and second shielding electrodes spaced apart from each other with respect to the data line.

摘要翻译： 面内切换模式液晶显示装置的阵列基板包括：基板; 衬底上的栅极线; 与栅极线平行且间隔开的第一和第二公共线; 与栅极线交叉以限定像素区域的数据线; 连接到栅线和数据线的薄膜晶体管; 连接到薄膜晶体管的像素电极，像素电极具有板形; 连接在第一和第二公共线之间的多个公共电极，多个公共电极与像素电极重叠; 以及平行于数据线的第一和第二屏蔽电极，第一和第二屏蔽电极相对于数据线彼此间隔开。

公开(公告)号：US06001539A

公开(公告)日：1999-12-14

申请号：US831717

申请日：1997-04-01

申请人： Ki-Hyun Lyu ,  Hoo-Young Lee

发明人： Ki-Hyun Lyu ,  Hoo-Young Lee

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  G02F1/1333

CPC分类号： H01L27/1214 ,  H01L29/66765

摘要： A method of manufacturing an LCD on a substrate, the method comprising the steps of forming a thin film transistor on the substrate; forming an organic passivation layer over the thin film transistor; forming a patterned photoresist over the organic passivation layer; etching the organic passivation layer to form a contact hole over one of source and drain of the transistor; removing the photoresist; forming an SiO.sub.2 layer at a surface of the organic passivation layer by O.sub.2 ashing; and forming a pixel electrode contacting one of the source and drain of the transistor through the contact hole.

摘要翻译： 一种在基板上制造LCD的方法，所述方法包括以下步骤：在所述基板上形成薄膜晶体管; 在所述薄膜晶体管上形成有机钝化层; 在所述有机钝化层上形成图案化的光致抗蚀剂; 蚀刻有机钝化层以在晶体管的源极和漏极之一上形成接触孔; 去除光致抗蚀剂; 通过O2灰化在有机钝化层的表面上形成SiO 2层; 以及形成通过所述接触孔接触所述晶体管的源极和漏极之一的像素电极。

公开(公告)号：US5926235A

公开(公告)日：1999-07-20

申请号：US861315

申请日：1997-05-21

申请人： Chang-Wook Han ,  Kyoung-Nam Lim ,  Byung-Chul Ahn ,  Jeong-Hyun Kim ,  Ki-Hyun Lyu

发明人： Chang-Wook Han ,  Kyoung-Nam Lim ,  Byung-Chul Ahn ,  Jeong-Hyun Kim ,  Ki-Hyun Lyu

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04

CPC分类号： H01L27/1214 ,  G02F1/136227 ,  G02F2001/133357

摘要： An active matrix liquid crystal display (AMLCD) and method of manufacture includes gate bus lines and gate electrodes formed on a substrate; a gate insulating layer formed on the substrate, the gate bus lines and the gate electrodes; a semiconductor layer formed on the gate insulating layer; and an ohmic contact layer formed on the semiconductor layer. Also source bus lines, source electrodes, drain electrodes and storage electrodes of storage capacitors are formed on the ohmic contact layer. A first passivation layer covers the storage capacitors, the drain electrodes, the semiconductor layer, the source bus lines and source electrodes; and a second passivation layer covers the first passivation layer and the substrate. Contact holes formed in the first and second passivation layers expose the drain electrodes and the storage capacitors. Pixel electrodes are formed on the storage electrodes, the drain electrodes, the passivation layer, and the substrate.

摘要翻译： 有源矩阵液晶显示器（AMLCD）及其制造方法包括形成在基板上的栅极总线和栅电极; 形成在基板上的栅极绝缘层，栅极总线和栅极电极; 形成在所述栅极绝缘层上的半导体层; 以及形成在半导体层上的欧姆接触层。 源极总线，源电极，漏电极和存储电容器的存储电极也形成在欧姆接触层上。 第一钝化层覆盖存储电容器，漏电极，半导体层，源极总线和源电极; 并且第二钝化层覆盖第一钝化层和衬底。 形成在第一钝化层和第二钝化层中的接触孔露出漏电极和存储电容器。 像素电极形成在存储电极，漏电极，钝化层和衬底上。

公开(公告)号：US5874326A

公开(公告)日：1999-02-23

申请号：US899207

申请日：1997-07-23

申请人： Ki Hyun Lyu

发明人： Ki Hyun Lyu

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L27/1214 ,  H01L29/66765 ,  H01L29/78669

摘要： The thin film transistor is fabricated by etching a semiconductor layer, n.sup.+ semiconductor layer, etch stopper layer, and metal layer with single etching process to decrease the number of masks. By controlling the thickness of the semiconductor layer or the etching selection ratio of the etch stopper layer, an etch stopper thin film transistor or back channel etched thin film transistor can be fabricated.

摘要翻译： 通过用单一蚀刻工艺蚀刻半导体层，n +半导体层，蚀刻停止层和金属层来制造薄膜晶体管，以减少掩模的数量。 通过控制半导体层的厚度或蚀刻停止层的蚀刻选择比，可以制造蚀刻停止薄膜晶体管或背沟道蚀刻薄膜晶体管。

公开(公告)号：US20090322975A1

公开(公告)日：2009-12-31

申请号：US12318271

申请日：2008-12-23

申请人： Sang-Moo Song ,  In-Ho Hwang ,  Dae-Lim Park ,  Ki-Hyun Lyu

发明人： Sang-Moo Song ,  In-Ho Hwang ,  Dae-Lim Park ,  Ki-Hyun Lyu

IPC分类号： G02F1/1368

CPC分类号： G02F1/133707 ,  G02F2001/134372

摘要： An array substrate for a fringe field switching mode liquid crystal display device includes a plurality of gate lines on a substrate; a gate insulating layer on the plurality of gate lines; a plurality of data lines on the gate insulating layer and crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor electrically connected to the gate and data lines and in each pixel region; a pixel electrode having a plate shape and in the each pixel region, the pixel electrode connected to a portion of the thin film transistor; a first passivation layer on the pixel electrode and over the thin film transistor; and a common electrode on the first passivation layer and having a plurality of openings of a bar shape in the each pixel region, each of the openings having a major axis along the data line and a minor axis along the gate line, wherein a center portion of each opening overlaps the pixel electrode, and both ends along the major axis of each opening protrude beyond the pixel electrode.

摘要翻译： 用于边缘场开关模式液晶显示装置的阵列基板包括在基板上的多条栅极线; 多个栅极线上的栅极绝缘层; 在所述栅极绝缘层上的多条数据线，并与所述多条栅极线交叉以限定多个像素区域; 电连接到栅极和数据线以及每个像素区域中的薄膜晶体管; 具有板状的像素电极，并且在每个像素区域中，所述像素电极连接到所述薄膜晶体管的一部分; 在所述像素电极上并在所述薄膜晶体管上方的第一钝化层; 以及在所述第一钝化层上的公共电极，并且在所述每个像素区域中具有棒状形状的多个开口，每个所述开口具有沿所述数据线的长轴和沿着所述栅极线的短轴，其中，中心部分 的每个开口与像素电极重叠，并且沿着每个开口的长轴的两端突出超过像素电极。

公开(公告)号：US06746959B2

公开(公告)日：2004-06-08

申请号：US09413854

申请日：1999-10-07

申请人： Ki-Hyun Lyu

发明人： Ki-Hyun Lyu

IPC分类号： H01L2120

CPC分类号： H01L29/66765

摘要： The number of mask steps used to fabricate a TFT in an AMLCD is reduced. In particular, source and drain metallizations, as well as doped and undoped semiconductor layers are patterned at the same time, and the source and drain metallizations and the doped semiconductor layer are etched in a single etching step using an insulating passivation layer as a mask to form source and drain electrodes. Manufacturing costs can be reduced and the manufacturing yield can be improved.

摘要翻译： 用于制造AMLCD中的TFT的掩模步骤的数量减少。 特别地，源极和漏极金属化以及掺杂和未掺杂的半导体层同时被图案化，并且在使用绝缘钝化层作为掩模的单个蚀刻步骤中蚀刻源极和漏极金属化层和掺杂半导体层 形成源极和漏极。 可以降低制造成本，提高制造成品率。

公开(公告)号：US06537843B2

公开(公告)日：2003-03-25

申请号：US09978050

申请日：2001-10-17

申请人： Ki-Hyun Lyu ,  Kwang-Jo Hwang

发明人： Ki-Hyun Lyu ,  Kwang-Jo Hwang

IPC分类号： H01L2100

CPC分类号： H01L27/12 ,  H01L29/4908

摘要： A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.