摘要:
The invention relates to a process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, disassociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.
摘要:
Surface-wave arrangement (1) having at least one surface structure (21, 22), by means of which those components of surface waves (19) which are produced in the arrangement are rendered ineffective with respect to interference which would otherwise occur, for which a sump is provided in a known manner at the end of the substrate.
摘要:
A process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined dissociation temperature so that the gas dissociates into fractions, whereby those fractions subsequently condense on the substrate to build up a semiconducting layer.
摘要:
The surface acoustic wave (SAW) filter has two or more identical acoustic tracks. The input side of the tracks is electrically connected in parallel and the output side is electrically connected in series, whereby the impedance of input side of the SAW filter is reduced relative to the impedance of the individual acoustic tracks.