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1.发明授权Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals 失效用于磁性Kyropoulos生长半导体晶体的毛细管压力释放
公开(公告)号：US5252175A
公开(公告)日：1993-10-12
申请号：US546063
申请日：1990-06-29
摘要： In the liquid encapsulated Kyropoulos process, the crystal is allowed to grow to the limits of the crucible and remain under the encapsulant fluid. In order to relieve the melt pressure between the growing crystal and the crucible, at least one capillary pressure relief hole is placed in the crucible which allows some of the melt to leak therefrom to relieve pressure.
摘要翻译： 在液体封装的Kyropoulos工艺中，允许晶体生长到坩埚的极限并保持在密封剂流体之下。 为了减轻生长晶体和坩埚之间的熔体压力，在坩埚中放置至少一个毛细管压力释放孔，这允许一些熔体从其中泄漏以减轻压力。
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公开(公告)号：US4783320A
公开(公告)日：1988-11-08
申请号：US801348
申请日：1985-11-25
申请人： Joseph A. Adamski , Brian S. Ahern
发明人： Joseph A. Adamski , Brian S. Ahern
CPC分类号： C30B11/00 , C30B29/40 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A process for the high pressure synthesis of InP using an independent temperature control of a three zone furnace incorporating a heat pipe provides a stable temperature profile throughout the synthesis cycle. Internal/external pressure control of the quartz ampoule is maintained by use of a water cooled baffle and a temperature/pressure balancing program. Complete synthesis is achieved in less than five hours.
摘要翻译： 使用包含热管的三区炉的独立温度控制来进行高压合成InP的方法在整个合成循环中提供了稳定的温度曲线。 通过使用水冷挡板和温度/压力平衡程序来维持石英安瓿的内部/外部压力控制。 完全合成是在不到五个小时内实现的。
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3.发明授权
公开(公告)号：US5493985A
公开(公告)日：1996-02-27
申请号：US25208
申请日：1993-02-26
申请人： David Bliss , Robert M. Hilton , Joseph A. Adamski
发明人： David Bliss , Robert M. Hilton , Joseph A. Adamski
摘要： The present invention is a process and apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a crystal growth furnace heated by RF coils. Inside the furnace is a susceptor for holding a crucible. Above the crucible is selectively positioned a phosphorus improved injector. The non-phosphorus materials are placed in the crucible and melted to a desired temperature. The phosphorus material previously placed within the injector is heated by the radiant heat from the crucible to drive the phosphorus vapor into the melt through a tube. This is closely controlled by noting the temperature within the injector and adjusting the height of the injector above the melt to control the temperature within the phosphorus material. After the formation of the stoichiometric melt, the seed is inserted into the melt for crystal growth if so desired. A further improvement to the above apparatus is the use of an improved injector having a cover and a shield thereabout. The injector and cover have a central hole through which the seed is inserted. The injector is moved vertically within the cover to provide the proper temperature therein.
摘要翻译： 本发明是一种用于在不经外部暴露的情况下在单一炉中以元素材料开始合成和生长磷化合物的单晶的方法和装置。 本发明的装置是由RF线圈加热的晶体生长炉。 在炉内是用于保持坩埚的感受器。 在坩埚上方选择性地定位磷改进的喷射器。 将非磷材料置于坩埚中并熔化至所需温度。 预先放置在喷射器内的磷材料通过来自坩埚的辐射热量加热，以通过管将磷蒸气驱入熔体中。 这通过注意喷射器内的温度并且调节喷射器在熔体上方的高度来控制磷材料内的温度来严密控制。 在形成化学计量的熔体之后，如果需要，将种子插入熔体中以进行晶体生长。 对上述装置的进一步改进是使用具有盖和围绕其的改进的喷射器。 注射器和盖子具有插入种子的中心孔。 喷射器在盖内垂直移动以在其中提供适当的温度。
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公开(公告)号：US4559217A
公开(公告)日：1985-12-17
申请号：US547611
申请日：1983-11-01
申请人： Joseph A. Adamski
发明人： Joseph A. Adamski
IPC分类号： C01B25/08
CPC分类号： C01B25/087 , Y10S148/13
摘要： A method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vacuum in an open ended quartz ampoule to a temperature in excess of 850.degree. C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.
摘要翻译： 一种用于生产高纯度铟的方法，用于随后在多晶磷化铟的合成中用作反应成分，其包括在开放式石英安瓿中将真空中的原料铟加热至超过850℃的温度的步骤。 密封安瓿瓶同时将所述真空保持在安瓿内部的步骤。
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公开(公告)号：US4681995A
公开(公告)日：1987-07-21
申请号：US848179
申请日：1986-04-04
申请人： Brian S. Ahern , Joseph A. Adamski
发明人： Brian S. Ahern , Joseph A. Adamski
CPC分类号： C30B11/003
摘要： A heat pipe ring for use in a crystal growth furnace is ring-shaped with at least one arm thereon and is constructed as one piece. An RF coil for heating a working fluid in said heat pipe is attached about said arm or an electric current can flow from one arm to an oppositely located arm to heat said body. These rings can be stacked and each may have an independently controlled sources of heat. Each heat pipe ring of the present invention has a wall of three layers of refractory material. In the case of working above 1000.degree. C., the working fluid can be lithium and the wall made of a layer of tungsten, a layer of graphite as a spacer, and a layer of silicon carbide. The internal surface on the tungsten layer is knurled to support capillary action. As a result of these features the heat pipe ring is able to survive high temperatures, greater than 1000.degree. C., high pressures, greater than 80 atm, corrosive atmospheres, a high vacuum, and further provides azimuthal symmetry as well as axial temperature gradient profiles when the heat pipes are stacked and independently heated.
摘要翻译： 在晶体生长炉中使用的热管环是环形的，其上至少有一个臂，并被构造成一体。 用于加热所述热管中的工作流体的RF线圈围绕所述臂安装，或者电流可以从一个臂流动到相对定位的臂以加热所述主体。 这些环可以堆叠，并且每个可以具有独立控制的热源。 本发明的每个热管环具有三层耐火材料的壁。 在1000℃以上工作的情况下，工作流体可以是锂，由钨层，石墨层作为间隔物和碳化硅层构成的壁。 钨层上的内表面被滚花以支持毛细管作用。 作为这些特征的结果，热管环能够耐高温，大于1000℃，高压，大于80atm，腐蚀性气氛，高真空，并进一步提供方位角对称性以及轴向温度梯度 当热管堆叠并独立加热时的型材。
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6.发明授权
公开(公告)号：US4764350A
公开(公告)日：1988-08-16
申请号：US916963
申请日：1986-10-08
申请人： Joseph A. Adamski
发明人： Joseph A. Adamski
CPC分类号： C30B29/40 , C30B11/002 , C30B11/003 , Y10T117/1092
摘要： A method for synthesizing and growing a single crystal of indium phosphide includes vacuum baking and purifying of elemental indium prior to reacting it with red phosphorus within the same apparatus. The steps growth take place in a vertical apparatus by placing the reaction components within a reaction vessel that is sealed under vacuum after the purification and then heated and cooled within predetermined temperature limits to react indium with red phosphorus to synthesize molten indium phosphide and a single crystal of indium phosphide by cooling the molten indium phosphide within a controlled temperature atmosphere. Excess phosphorus is maintained during growth to eliminate the need for encapsulation of the growth melt.
摘要翻译： 用于合成和生长磷化铟的单晶的方法包括在与相同装置内的红磷反应之前对元素铟进行真空烘烤和纯化。 通过将反应组分置于反应容器中，在反应容器中真空密封，然后在预定的温度范围内加热和冷却，使反应铟与红磷合成熔融磷化铟和单晶 的磷化铟通过在受控的温度气氛中冷却熔融的磷化铟。 在生长期间保持过量的磷以消除对生长熔体的包封的需要。
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7.发明授权
公开(公告)号：US4185081A
公开(公告)日：1980-01-22
申请号：US929470
申请日：1978-07-31
申请人： Thomas A. Fauth , Joseph A. Adamski
发明人： Thomas A. Fauth , Joseph A. Adamski
CPC分类号： C01B25/087
摘要： A method for synthesizing indium phosphide that avoids the explosion problem which often occurs in the synthesis procedures which use the direct reaction of elemental phosphorus and elemental indium to produce indium phosphide. The method utilizes specific heating, pressurizing and cooling parameters to safely produce highly pure, stoichiometric, polycrystalline indium phosphide.
摘要翻译： 一种合成磷化铟的方法，其避免了在使用元素磷和元素铟的直接反应产生磷化铟的合成过程中经常发生的爆炸问题。 该方法利用特定的加热，加压和冷却参数来安全地生产高纯度，化学计量的多晶磷化铟。
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公开(公告)号：US3607111A
公开(公告)日：1971-09-21
申请号：US3607111D
申请日：1969-03-18
CPC分类号： C30B11/10 , Y10T117/1028
摘要： A powder-dispensing assembly for use in combination with a fusion-type crystal-growing furnace in which a carrier gas is used for entraining the powder feed constituents for transportation to the crystal-growing zone thereof. The assembly includes a funnel-shaped powder container positioned an outer container and a means selectively movable for feeding the carrier gas to either the powder container to affect powder fall or to the crystal-growing furnace while simultaneously sealing the powder container to prevent powder fall.
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