摘要:
Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.
摘要:
Provided are an apparatus for processing adaptive video and a method of scaling video, which generate a graphical user interface (GUI) so that a GUI suitable for the screen size of a display device can be displayed according to the screen size of the display device. The apparatus can realize a GUI most suitable for the screen size of an external display device connected to the apparatus by enlarging or reducing the size of the GUI according to the screen size of the external display device, or by changing the arrangement of items arranged on the GUI.
摘要:
A method and apparatus to supply a power voltage to a mobile device in a variable manner in order to provide high output power and a high quality sound environment and a mobile device using the same. The apparatus includes a volume control unit to detect installation of an external power supply and to generate a voltage control value corresponding to a current volume level, and a DC-DC converter unit to convert a voltage of an internal power supply in a variable manner on the basis of the voltage control value generated in the volume control unit in order to drive the switching power amplifier.
摘要:
An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
摘要:
An ink level detecting apparatus usable with an ink-jet printer includes an ink tank having a bottom, a ceiling, and a sidewall, a shrinkable ink pack is accommodated in the ink tank and having a top surface that moves down evenly as an ink level in the shrinkable ink pack decreases, a fixed electrode installed to an upper portion of the ink tank, and a movable electrode disposed to face the fixed electrode at a predetermined distance from the fixed electrode. The movable electrode moves in a horizontal direction according to a height variation of the top surface of the shrinkable ink pack such that an overlap area between the movable electrode and the fixed electrode varies. Therefore, the ink level is detected from electric capacity variation sensed between the fixed electrode and the movable electrode.
摘要:
An apparatus and method of recording content includes a user selecting an apparatus to reproduce content, which is to reproduce recorded content, from among at least one apparatus to reproduce content, comparing configuration information of an apparatus to record content and configuration information of the selected apparatus to reproduce content, setting an encoding method to record content, and recording the content according to the set encoding method.
摘要:
A cartridge body partitioned into foam chambers and ink chambers and having a first welding part and a second welding part, a lid having a third welding part engaged and welded with the first welding part of the cartridge body and a fourth welding part formed on the bottom thereof in which the second welding part is inserted. Ink heads provided on the bottom of the cartridge body eject ink, and ink filters provided on upper sides of the ink heads to prevent foreign materials or bubbles from flowing in. The first welding part has a first section horizontally protruded in cross-section and a second section vertically protruded to the first section, and the third welding part has a third section vertically protruded, a fourth section horizontally protruded, and a fifth section in a diagonal cross-sectioned shape connecting the third section and the fourth section. The second welding part has a vertical rectangular shape in cross-section, and the fourth welding part has a concave groove formed in which the second welding part is inserted.
摘要:
A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas, which is input through the gas flow path, reacts with a specimen in the reaction chamber, the reactor further including a gas distributor, which is located in the reaction chamber to evenly supply the gas; a specimen location controller for moving the specimen located in the vacuum chamber to the reaction chamber; and an analyzer, which is connected to the reaction chamber, for analyzing a second gas generated in the reaction chamber. The apparatus is able to deposit uniform atomic layers on a specimen by maintaining the pressure and flow of reactant gas and can deposit and analyze an atomic layer simultaneously.
摘要:
A method and apparatus for automatically determining a characteristic of a speaker and automatically setting a speaker mode in an audio/video system. The method includes: detecting a current for operating the speaker by inputting a predetermined signal; measuring an impedance characteristic of the speaker in accordance with a frequency change based on the detected current; determining a speaker type based on the measured impedance characteristic; and setting a speaker mode based on an impedance characteristic curve of the discriminated speaker type.
摘要:
A method for preparing a 1-androstene derivative which comprises reacting a 2-iodo-androstane derivative with an oxidizing agent while maintaining the pH of the reaction mixture at a specific range gives the 1-androstene derivative with high purity and yield.