HARD DISK DRIVE HAVING SLIDER LIMITER
    1.
    发明申请
    HARD DISK DRIVE HAVING SLIDER LIMITER 审中-公开
    硬盘驱动器具有滑块限制

    公开(公告)号:US20110013320A1

    公开(公告)日:2011-01-20

    申请号:US12835862

    申请日:2010-07-14

    Applicant: Jae-suk Lee

    Inventor: Jae-suk Lee

    CPC classification number: G11B5/54 G11B21/22

    Abstract: A hard disk drive (HDD) including a slider limiter. The HDD includes a spindle motor installed to a base member; at least one disk mounted to the spindle motor to be rotated by the spindle motor; an actuator moving a read/write head to a desired position on the at least one disk; and a ramp that is installed outside the at least one disk to park the read/write head when the at least one disk stops rotating. A slider limiter that is disposed between the flexures facing each other in order to limit vertical fluctuation of the slider is formed on the ramp. A step portion or a hollow space is formed in a portion of the slider limiter facing the slider, and a side-tab is protruded from both sides of the flexure to face the slider limiter on both sides of the hollow space.

    Abstract translation: 包括滑块限制器的硬盘驱动器(HDD)。 HDD包括安装到基座构件的主轴电机; 至少一个盘安装到所述主轴马达以由所述主轴马达旋转; 致动器将读/写头移动到所述至少一个盘上的期望位置; 以及斜坡,其安装在所述至少一个盘的外部,以在所述至少一个盘停止旋转时停放所述读/写头。 设置在彼此面对的挠曲件之间以限制滑块的垂直波动的滑块限制器形成在斜坡上。 在面向滑块的滑块限制器的一部分中形成台阶部分或中空空间,并且侧片从弯曲部的两侧突出以面对中空空间两侧的滑块限制器。

    Sulfonated Poly (Arylene Ether) Containing Crosslinkable Moiety at End Group, Method of Manufacturing the Same, and Polymer Electrolyte Membrane Using the Sulfonated Poly (Arylene Ether) and the Method
    2.
    发明申请
    Sulfonated Poly (Arylene Ether) Containing Crosslinkable Moiety at End Group, Method of Manufacturing the Same, and Polymer Electrolyte Membrane Using the Sulfonated Poly (Arylene Ether) and the Method 审中-公开
    在端基含有可交联部分的磺化聚(亚芳基醚),其制造方法和使用磺化聚(亚芳基醚)的聚合物电解质膜和方法

    公开(公告)号:US20100168346A1

    公开(公告)日:2010-07-01

    申请号:US12086489

    申请日:2007-03-06

    Abstract: A sulfonated polyUrylene ether) copolymer, a method of preparing the same, and a polymer electrolyte membrane using the sulfonated poly(arylene ether) copolymer are provided. A sulfonated poly(arylene ether) copolymer containing a sulfonic acid is synthesized by poly condensing a dihydroxy monomer having a sulfonate group with a dihalide monomer, or by polycondensing a dihalide monomer having a sulfonate group with a dihydroxy monomer. Moreover, a crosslinkable dihydroxy monomer or a crosslinkable dihalide monomer is polycondensed with the obtained poly(arylene ether) copolymer, thus enable crosslinking between polymers. A polymer electrolyte membrane for a fuel cell formed using a poly(arylene ether) copolymer containing a crosslinkable moiety maintains the equivalent or superior levels to existing sulfonated poly(arylene ether) polymer or the Nafion membrane commercially available at present in terms of thermal stability, mechanical stability, chemical properties, film formability, and the like, and shows considerably improved proton conductivity and cell performances.

    Abstract translation: 磺化聚亚乙基醚)共聚物,其制备方法和使用磺化聚(亚芳基醚)共聚物的聚合物电解质膜。 通过将具有磺酸盐基团的二羟基单体与二卤化物单体聚合,或通过将具有磺酸盐基团的二卤化物单体与二羟基单体缩聚来合成含有磺酸的磺化聚(亚芳基醚)共聚物。 此外,可交联的二羟基单体或可交联的二卤化物单体与所得的聚(亚芳基醚)共聚物缩聚,从而能够在聚合物之间进行交联。 使用含有交联性部分的聚(亚芳基醚)共聚物形成的燃料电池用高分子电解质膜,与现有的磺化聚(亚芳基醚)聚合物或目前在热稳定性方面可商购的Nafion膜相比, 机械稳定性,化学性质,成膜性等,显示出显着提高的质子传导性和电池性能。

    Terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s
    3.
    发明授权
    Terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s 失效
    含氟和氟化聚(亚芳基醚硫醚)的三苯基二羟基单体

    公开(公告)号:US07732560B2

    公开(公告)日:2010-06-08

    申请号:US12435112

    申请日:2009-05-04

    CPC classification number: C08G65/4025

    Abstract: The present invention relates to terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s prepared by using the monomers, more particularly, terphenyl dihydroxy monomers containing both two hydroxy functional groups and fluorine and fluorinated poly(arylene ether sulfide)s prepared by an aromatic nucleophilic substitution polymerization (SNAr) using the monomers, which are thus useful as optical materials in the field of information telecommunications.

    Abstract translation: 本发明涉及通过使用单体制备的含氟和氟化聚(亚芳基醚硫醚)的三联苯基二羟基单体,更具体地说,涉及含有两个羟基官能团的三联苯基二羟基单体和氟和氟化聚(亚芳基醚硫醚),其由 使用单体的芳族亲核取代聚合(SNAr),因此可用作信息通信领域的光学材料。

    Metal interconnection lines of semiconductor devices and methods of forming the same
    4.
    发明授权
    Metal interconnection lines of semiconductor devices and methods of forming the same 有权
    半导体器件的金属互连线及其形成方法

    公开(公告)号:US07514793B2

    公开(公告)日:2009-04-07

    申请号:US11633697

    申请日:2006-12-04

    Applicant: Jae-Suk Lee

    Inventor: Jae-Suk Lee

    Abstract: Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.

    Abstract translation: 公开了半导体器件的金属互连线及其形成方法。 通过防止金属层侵蚀并防止金属线由于电迁移(EM)和应力迁移(SM)而被破坏,在半导体器件的公开的金属线中实现了提高的可靠性。 所示的金属互连线包括:半导体衬底; 衬底上的金属图案; 金属图案下的胶图案; 金属图案上的抗反射图案; 以及围绕金属图案的侧壁的虚拟图案。

    Methods of forming shallow trench isolation structures in semiconductor devices

    公开(公告)号:US20080160719A1

    公开(公告)日:2008-07-03

    申请号:US12075075

    申请日:2008-03-06

    Applicant: Jae Suk Lee

    Inventor: Jae Suk Lee

    CPC classification number: H01L21/31053 H01L21/76229

    Abstract: Methods of forming a shallow trench isolation structures in semiconductor devices are disclosed. A disclosed method comprises forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate; forming a trench defining first and second active areas by etching the second oxide layer, the nitride layer, the first oxide layer, and the substrate in a predetermined area; forming a third oxide layer along an inside of the trench; forming a fourth oxide layer to fill up the trench; forming a sacrificial oxide layer on the fourth oxide layer; and removing the sacrificial oxide layer, the fourth oxide layer, the third oxide layer, the second oxide layer, and the nitride layer so as to form the shallow trench isolation. Thus, it is possible to minimize the damage of a narrow active area when forming an element isolation area through an STI process.

    DISK DAMPER APPARATUS, HARD DISK DRIVE APPARATUS WITH THE SAME, AND METHOD OF FABRICATING THE DISK DAMPER APPARATUS
    7.
    发明申请
    DISK DAMPER APPARATUS, HARD DISK DRIVE APPARATUS WITH THE SAME, AND METHOD OF FABRICATING THE DISK DAMPER APPARATUS 审中-公开
    碟形阻尼器装置,与其相同的硬盘驱动装置以及制造盘式阻尼器装置的方法

    公开(公告)号:US20080151420A1

    公开(公告)日:2008-06-26

    申请号:US11869203

    申请日:2007-10-09

    CPC classification number: G11B25/043 G11B33/08 G11B33/146

    Abstract: A disk damper apparatus and a hard disk drive apparatus (HDD) with the disk damper, and a method of fabricating the disk damper. The disk damper includes a plate interposed between stacked disks and formed of metal and a spacer having a thickness greater than and fabricated separately from the plate to be combined with an outer perimeter of the plate.

    Abstract translation: 具有盘式阻尼器的盘式阻尼器装置和硬盘驱动装置(HDD)及其制造方法。 盘式减震器包括插入在堆叠盘之间并由金属形成的板和具有大于和与板平行制造并且与板的外周组合的厚度的间隔件的板。

    Method for fabricating semiconductor device
    8.
    发明授权
    Method for fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07338855B2

    公开(公告)日:2008-03-04

    申请号:US11312594

    申请日:2005-12-21

    Applicant: Jae Suk Lee

    Inventor: Jae Suk Lee

    CPC classification number: H01L28/84 H01L28/75 Y10S438/964

    Abstract: A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposition; forming an uneven surface in the polysilicon layer by etching the polysilicon layer with an isotropic etchant; forming an upper metal layer on the polysilicon layer; sequentially etching the upper metal layer and the polysilicon layer; and performing chemical-mechanical polishing after completing a gap-fill process on the upper metal layer.

    Abstract translation: 提供了一种制造半导体器件的方法,其中如果形成了包括不平坦表面的大型MIM电容器以增加电容。 该方法包括通过等离子体增强化学气相沉积在下金属层上形成多晶硅层; 通过用各向同性蚀刻剂蚀刻多晶硅层,在多晶硅层中形成不均匀的表面; 在所述多晶硅层上形成上金属层; 依次蚀刻上金属层和多晶硅层; 并且在上金属层上完成间隙填充处理之后进行化学机械抛光。

    Hard disk drive having disk damper and disk protector
    9.
    发明授权
    Hard disk drive having disk damper and disk protector 失效
    具有磁盘阻尼器和磁盘保护器的硬盘驱动器

    公开(公告)号:US07327530B2

    公开(公告)日:2008-02-05

    申请号:US11149303

    申请日:2005-06-10

    CPC classification number: G11B33/08 G11B17/038

    Abstract: A hard disk drive (HDD) having a disk damper and a disk protector. The HDD includes a base member, a spindle motor installed on the base member, a plurality of data storage disks mounted on the spindle motor, an actuator pivotably installed on the base member and moving a read/write head to specified positions over the disks, a disk damper disposed between adjacent disks of the plurality of disks and reducing vibrations of the disks, and a disk protector projecting by a specified height toward the disks form positions of top and bottom surfaces of the disk damper to correspond to outer edges of the disks where data is not recorded. Accordingly, if the disks are deflected due to an external shock, only the outer edges of the disks contact the disk protector, thereby preventing data recording surfaces of the disks from being damaged.

    Abstract translation: 具有盘式阻尼器和盘保护器的硬盘驱动器(HDD)。 HDD包括基座构件,安装在基座构件上的主轴电机,安装在主轴电机上的多个数据存储盘,可枢转地安装在基座构件上并将读/写头移动到盘上指定位置的执行器, 设置在所述多个盘的相邻盘之间并减少所述盘的振动的盘阻尼器,以及从所述盘阻尼器的顶表面和底表面的位置朝向所述盘突出指定高度的盘保护器,以对应于所述盘的外边缘 其中不记录数据。 因此,如果磁盘由于外部冲击而偏转,则只有磁盘的外边缘与磁盘保护器接触,从而防止磁盘的数据记录表面被损坏。

    Metal carbonate initiator and method for polymerizing isocyanates using the same
    10.
    发明申请
    Metal carbonate initiator and method for polymerizing isocyanates using the same 有权
    金属碳酸酯引发剂和使用其的异氰酸酯的聚合方法

    公开(公告)号:US20080027204A1

    公开(公告)日:2008-01-31

    申请号:US11819630

    申请日:2007-06-28

    CPC classification number: C08G18/02

    Abstract: Disclosed herein is a metal carbonate initiator for polymerizing isocyanates and a method for polymerizing isocyanates by anionic polymerization using the same, in which the initiator forms a cluster upon the initiation and protects stability of terminal anions at the end of the chain to cause controlled polymerization, thus preventing depolymerizaton and improving reaction time and efficiency without the use of a separate additive.

    Abstract translation: 本文公开了用于使异氰酸酯聚合的金属碳酸酯引发剂和通过使用该异氰酸酯的阴离子聚合使异氰酸酯聚合的方法,其中引发剂在起始时形成簇并保护链端部末端阴离子的稳定性以引起受控聚合, 从而防止解聚和提高反应时间和效率而不使用单独的添加剂。

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