Abstract:
A hard disk drive (HDD) including a slider limiter. The HDD includes a spindle motor installed to a base member; at least one disk mounted to the spindle motor to be rotated by the spindle motor; an actuator moving a read/write head to a desired position on the at least one disk; and a ramp that is installed outside the at least one disk to park the read/write head when the at least one disk stops rotating. A slider limiter that is disposed between the flexures facing each other in order to limit vertical fluctuation of the slider is formed on the ramp. A step portion or a hollow space is formed in a portion of the slider limiter facing the slider, and a side-tab is protruded from both sides of the flexure to face the slider limiter on both sides of the hollow space.
Abstract:
A sulfonated polyUrylene ether) copolymer, a method of preparing the same, and a polymer electrolyte membrane using the sulfonated poly(arylene ether) copolymer are provided. A sulfonated poly(arylene ether) copolymer containing a sulfonic acid is synthesized by poly condensing a dihydroxy monomer having a sulfonate group with a dihalide monomer, or by polycondensing a dihalide monomer having a sulfonate group with a dihydroxy monomer. Moreover, a crosslinkable dihydroxy monomer or a crosslinkable dihalide monomer is polycondensed with the obtained poly(arylene ether) copolymer, thus enable crosslinking between polymers. A polymer electrolyte membrane for a fuel cell formed using a poly(arylene ether) copolymer containing a crosslinkable moiety maintains the equivalent or superior levels to existing sulfonated poly(arylene ether) polymer or the Nafion membrane commercially available at present in terms of thermal stability, mechanical stability, chemical properties, film formability, and the like, and shows considerably improved proton conductivity and cell performances.
Abstract:
The present invention relates to terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s prepared by using the monomers, more particularly, terphenyl dihydroxy monomers containing both two hydroxy functional groups and fluorine and fluorinated poly(arylene ether sulfide)s prepared by an aromatic nucleophilic substitution polymerization (SNAr) using the monomers, which are thus useful as optical materials in the field of information telecommunications.
Abstract:
Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.
Abstract:
The present invention relates to an amphiphilic triblock copolymer comprising a poly(2-vinylpyridine) block and a poly(alkylisocyanate) block and the preparation method thereof, and particularly relates to an amphiphilic triblock copolymer comprising a coil-shaped hydrophilic poly(2-vinylpyridine) block and a rod-shaped lipophilic poly(alkylisocyanate) block, having a controlled structure of coil-rod-coil or rod-coil-rod, and the preparation method thereof.
Abstract:
Methods of forming a shallow trench isolation structures in semiconductor devices are disclosed. A disclosed method comprises forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate; forming a trench defining first and second active areas by etching the second oxide layer, the nitride layer, the first oxide layer, and the substrate in a predetermined area; forming a third oxide layer along an inside of the trench; forming a fourth oxide layer to fill up the trench; forming a sacrificial oxide layer on the fourth oxide layer; and removing the sacrificial oxide layer, the fourth oxide layer, the third oxide layer, the second oxide layer, and the nitride layer so as to form the shallow trench isolation. Thus, it is possible to minimize the damage of a narrow active area when forming an element isolation area through an STI process.
Abstract:
A disk damper apparatus and a hard disk drive apparatus (HDD) with the disk damper, and a method of fabricating the disk damper. The disk damper includes a plate interposed between stacked disks and formed of metal and a spacer having a thickness greater than and fabricated separately from the plate to be combined with an outer perimeter of the plate.
Abstract:
A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposition; forming an uneven surface in the polysilicon layer by etching the polysilicon layer with an isotropic etchant; forming an upper metal layer on the polysilicon layer; sequentially etching the upper metal layer and the polysilicon layer; and performing chemical-mechanical polishing after completing a gap-fill process on the upper metal layer.
Abstract:
A hard disk drive (HDD) having a disk damper and a disk protector. The HDD includes a base member, a spindle motor installed on the base member, a plurality of data storage disks mounted on the spindle motor, an actuator pivotably installed on the base member and moving a read/write head to specified positions over the disks, a disk damper disposed between adjacent disks of the plurality of disks and reducing vibrations of the disks, and a disk protector projecting by a specified height toward the disks form positions of top and bottom surfaces of the disk damper to correspond to outer edges of the disks where data is not recorded. Accordingly, if the disks are deflected due to an external shock, only the outer edges of the disks contact the disk protector, thereby preventing data recording surfaces of the disks from being damaged.
Abstract:
Disclosed herein is a metal carbonate initiator for polymerizing isocyanates and a method for polymerizing isocyanates by anionic polymerization using the same, in which the initiator forms a cluster upon the initiation and protects stability of terminal anions at the end of the chain to cause controlled polymerization, thus preventing depolymerizaton and improving reaction time and efficiency without the use of a separate additive.