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    Selective plasma vapor etching process
    1.
    发明授权
    Selective plasma vapor etching process 失效
    选择性等离子体蒸气蚀刻工艺

    公开(公告)号：US4213818A

    公开(公告)日：1980-07-22

    申请号：US1039

    申请日：1979-01-04

    申请人： Kyle E. Lemons ,  Richard C. Blish, II ,  Jan D. Reimer

    发明人： Kyle E. Lemons ,  Richard C. Blish, II ,  Jan D. Reimer

    IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/306 ,  C23F1/02

    CPC分类号： H01L21/31116 ,  H01L21/3065 ,  H01L21/31138

    摘要： Selective plasma vapor etching process for performing operations on a solid body formed of at least two different materials capable of being vapor etched exposed at, at least, one surface of the body, with the body being disposed in a chamber having a partial vacuum therein. A gas plasma is created within the chamber to produce active species of atoms and molecules so that these species come into contact with the surface of the body to chemically react at least one of the materials with active species from the gas plasma to form a gas-non-gaseous chemical reaction by controlling the concentration and reaction kinetics of specific species, and by controlling the activation energy of the etching reactions to produce a difference in rates between the materials so that the etching is more selective to one material over the other. The species is also controlled by the frequency of the electromagnetic energy.

    摘要翻译： 选择性等离子体蒸汽蚀刻工艺，用于对由至少两种不同材料形成的固体进行操作，所述至少两种不同的材料能够在主体的至少一个表面处被暴露于所述主体的至少一个表面，其中所述主体设置在其中具有部分真空的腔室中。 在室内产生气体等离子体以产生原子和分子的活性物质，使得这些物质与身体的表面接触以使来自气体等离子体的活性物质中的至少一种材料与至少一种物质发生化学反应， 通过控制特定物质的浓度和反应动力学，以及通过控制蚀刻反应的活化能以产生材料之间的速率差，使得蚀刻对另一种材料的选择性更高，从而实现非气态化学反应。 该物种也受电磁能量的频率控制。