公开(公告)号：US20170263711A1

公开(公告)日：2017-09-14

申请号：US15605698

申请日：2017-05-25

申请人： Jeongyun LEE ,  Kwang-Yong YANG ,  Keomyoung SHIN ,  Jinwook LEE ,  Yongseok LEE

发明人： Jeongyun LEE ,  Kwang-Yong YANG ,  Keomyoung SHIN ,  Jinwook LEE ,  Yongseok LEE

IPC分类号： H01L29/10 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L29/1033 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/6656

摘要： A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to cover side surfaces of the lower insulating pattern, a vertical structure through the isolation pattern to contact the substrate, the vertical structure having a first semiconductor layer on the substrate, a lower end of the first semiconductor layer being at a lower level than a lower surface of the isolation pattern, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, and a gate electrode crossing the vertical structure and extending over the isolation pattern.

公开(公告)号：US20130113046A1

公开(公告)日：2013-05-09

申请号：US13618127

申请日：2012-09-14

申请人： Moojin KIM ,  Jeongyun LEE

发明人： Moojin KIM ,  Jeongyun LEE

IPC分类号： H01L27/06

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zeiler diode by junction with the doped region.

摘要翻译： 提供了半导体器件及其形成方法。 半导体器件可以包括设置在衬底上并包括绝缘层和栅电极的半导体元件，在衬底上具有第一导电类型的掺杂区域，电连接到栅电极的导电互连和第一接触插塞 具有第二导电类型，并且将导电互连和掺杂区彼此电连接并通过与掺杂区结合而构成Zeiler二极管。

公开(公告)号：US08385044B2

公开(公告)日：2013-02-26

申请号：US12582823

申请日：2009-10-21

申请人： Jeongyun Lee ,  Daewoong Han ,  Gubae Kang ,  Wooyong Jeon ,  In-Pil Yoo ,  Jeongbin Yim ,  Dongjin Nam ,  Jinhwan Jung ,  Junghong Joo

发明人： Jeongyun Lee ,  Daewoong Han ,  Gubae Kang ,  Wooyong Jeon ,  In-Pil Yoo ,  Jeongbin Yim ,  Dongjin Nam ,  Jinhwan Jung ,  Junghong Joo

IPC分类号： H01G2/08 ,  H01G4/005

CPC分类号： H01G2/08 ,  H01G2/04 ,  H01G4/32 ,  Y02T10/7022

摘要： A film capacitor is provided that includes a case in which a film cell is incorporated and a heat radiating plate including a heat absorption unit being positioned adjacent to the film cell while not being in contact with the film cell for absorbing heat and a heat radiating unit being exposed to the outside of the case. Preferred film capacitors can perform a stable operation and have durable lifespan, even when an inverter adopting the film capacitor is mounted on a trunk room and an engine room, by effectively cooling heat generated from a film cell of the film capacitor.

摘要翻译： 提供了一种薄膜电容器，其包括其中结合有薄膜电池的壳体和包括热吸收单元的散热板，该散热板与薄膜单元相邻定位，而不与用于吸收热量的薄膜单元接触;以及散热单元 暴露在外壳外面。 优选的薄膜电容器可以通过有效地冷却由薄膜电容器的薄膜电池产生的热量，即使将采用薄膜电容器的逆变器安装在行李箱和发动机室上时，也能够保持稳定的使用寿命。

公开(公告)号：US20100128410A1

公开(公告)日：2010-05-27

申请号：US12582823

申请日：2009-10-21

申请人： Jeongyun Lee ,  Daewoong Han ,  Gubae Kang ,  Wooyong Jeon ,  In-Pil Yoo ,  Jeongbin Yim ,  Dongjin Nam ,  Jinhwan Jung ,  Junghong Joo

发明人： Jeongyun Lee ,  Daewoong Han ,  Gubae Kang ,  Wooyong Jeon ,  In-Pil Yoo ,  Jeongbin Yim ,  Dongjin Nam ,  Jinhwan Jung ,  Junghong Joo

IPC分类号： H01G2/08

CPC分类号： H01G2/08 ,  H01G2/04 ,  H01G4/32 ,  Y02T10/7022

摘要： A film capacitor comprises a case in which a film cell is incorporated and a heat radiating plate including a heat absorption unit being positioned adjacent to the film cell while not being in contact with the film cell for absorbing heat and a heat radiating unit being exposed to the outside of the case. The film capacitor can perform a stable operation and has durable lifespan, even when an inverter adopting the film capacitor is mounted on a trunk room and an engine room, by effectively cooling heat generated from a film cell of the film capacitor.

摘要翻译： 薄膜电容器包括其中结合有薄膜电池的壳体和包括热吸收单元的散热板，所述散热板与薄膜单元相邻定位，而不与用于吸收热量的薄膜单元接触，并且散热单元暴露于 外面的情况。 薄膜电容器可以通过有效地冷却由薄膜电容器的薄膜电池产生的热量，即使将采用薄膜电容器的逆变器安装在行李箱和发动机室上时，也能够保持稳定的使用寿命。

公开(公告)号：US20170110542A1

公开(公告)日：2017-04-20

申请号：US15208007

申请日：2016-07-12

申请人： Jeongyun LEE ,  Kwang-Yong YANG ,  Keomyoung SHIN ,  Jinwook LEE ,  Yongseok LEE

发明人： Jeongyun LEE ,  Kwang-Yong YANG ,  Keomyoung SHIN ,  Jinwook LEE ,  Yongseok LEE

IPC分类号： H01L29/10 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/1033 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/6656

摘要： A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to cover side surfaces of the lower insulating pattern, a vertical structure through the isolation pattern to contact the substrate, the vertical structure having a first semiconductor layer on the substrate, a lower end of the first semiconductor layer being at a lower level than a lower surface of the isolation pattern, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, and a gate electrode crossing the vertical structure and extending over the isolation pattern.

公开(公告)号：US08963252B2

公开(公告)日：2015-02-24

申请号：US13618127

申请日：2012-09-14

申请人： Moojin Kim ,  Jeongyun Lee

发明人： Moojin Kim ,  Jeongyun Lee

IPC分类号： H01L27/06 ,  H01L27/02

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zener diode by junction with the doped region.

摘要翻译： 提供了半导体器件及其形成方法。 半导体器件可以包括设置在衬底上并包括绝缘层和栅电极的半导体元件，在衬底上具有第一导电类型的掺杂区域，电连接到栅电极的导电互连和第一接触插塞 具有第二导电类型并且将导电互连和掺杂区彼此电连接并通过与掺杂区结合而构成齐纳二极管。