公开(公告)号：US09811712B2

公开(公告)日：2017-11-07

申请号：US14376896

申请日：2012-06-22

Applicant: Moon Hyo Kang ,  Ji Ho Hur ,  Hyo Jun Kim ,  Bong Yeob Hong

Inventor： Moon Hyo Kang ,  Ji Ho Hur ,  Hyo Jun Kim ,  Bong Yeob Hong

IPC: G06F3/041 ,  G06K9/00 ,  G01B7/00 ,  H01L23/60 ,  H01L27/02 ,  H01L27/12

CPC classification number: G06K9/00053 ,  G01B7/003 ,  G06K9/0002 ,  H01L23/60 ,  H01L27/0251 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.

公开(公告)号：US08766651B2

公开(公告)日：2014-07-01

申请号：US13556551

申请日：2012-07-24

Applicant: Moon Hyo Kang ,  Ji Ho Hur

Inventor： Moon Hyo Kang ,  Ji Ho Hur

IPC: G01R27/26

CPC classification number: G06K9/0002 ,  H03K17/9622

Abstract: The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal.

Abstract translation: 根据本发明的示例性实施例的电容式指纹传感器包括：用于感测人类指纹的指纹感测电极Cfp; 其中流过其中的电流量根据指纹感测电极Cfp的输出电压而变化的第一晶体管T1; 其中流过其中的电流量由于流过第一晶体管T1的电流之间的差异而变化的第二晶体管T2; 以及第三晶体管T3，其复位第一晶体管T1的栅电极，并经由脉冲信号提供与第一晶体管T1的栅电极的电容耦合。

公开(公告)号：US20080206935A1

公开(公告)日：2008-08-28

申请号：US11830010

申请日：2007-07-30

Applicant: Jin JANG ,  Se-Hwan Kim ,  Youn-Duck Nam ,  Eung-Bum Kim ,  Ji-Ho Hur

Inventor： Jin JANG ,  Se-Hwan Kim ,  Youn-Duck Nam ,  Eung-Bum Kim ,  Ji-Ho Hur

IPC: H01L21/84

CPC classification number: H01L29/7869

Abstract: Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes.The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.

Abstract translation: 公开了一种制造薄膜晶体管的方法。 具体地，该方法使用局部氧化，其中透明金属氧化物层的一部分被局部氧化以转化为半导体层，使得透明金属氧化物层的氧化部分可以用作沟道区域，并且所述非氧化部分 透明金属氧化物层可以用作源极和漏极。 该方法包括以下步骤：在衬底上形成栅电极并在其上形成栅极绝缘层，在栅绝缘层上形成透明金属氧化物层，在透明金属氧化物层上形成氧化阻挡层， 露出位于栅电极上方的透明金属氧化物层的部分，仅局部氧化透明金属氧化物层的露出部分，将露出部分转换为半导体层。

公开(公告)号：US20070024546A1

公开(公告)日：2007-02-01

申请号：US11396951

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Seung-Hyun Park

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Seung-Hyun Park

IPC: G09G3/30

CPC classification number: G06K9/0002

Abstract: Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.

Abstract translation: 用于补偿阈值电压的不均匀性检测装置及其方法具有多条扫描线和多条数据线以及排列在扫描线和数据线相交的各点的像素电路。 用于补偿阈值电压的不均匀性检测装置及其方法可以通过使用有源元件（例如TFT）作为构成像素电路的元件来精确地感测诸如指纹的微小不均匀的状态。

公开(公告)号：US07688370B2

公开(公告)日：2010-03-30

申请号：US11295373

申请日：2005-12-06

Applicant: Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

Inventor： Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

IPC: H04N3/14

CPC classification number: H04N5/37452 ,  H04N5/3559

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.

Abstract translation: 公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸 在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。 具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

公开(公告)号：US06952022B2

公开(公告)日：2005-10-04

申请号：US10732320

申请日：2003-12-09

Applicant: Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

Inventor： Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

IPC: H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L29/04

CPC classification number: H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

Abstract translation: 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

公开(公告)号：US20150084038A1

公开(公告)日：2015-03-26

申请号：US14376896

申请日：2012-06-22

Applicant: Moon Hyo Kang ,  Ji Ho Hur ,  Hyo Jun Kim ,  Bong Yeob Hong

Inventor： Moon Hyo Kang ,  Ji Ho Hur ,  Hyo Jun Kim ,  Bong Yeob Hong

IPC: G06K9/00 ,  H01L27/02 ,  H01L27/12 ,  G01B7/00 ,  H01L23/60

CPC classification number: G06K9/00053 ,  G01B7/003 ,  G06K9/0002 ,  H01L23/60 ,  H01L27/0251 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.

Abstract translation: 提供了一种强化的静电传感器阵列，其具有防静电布线覆盖像素电路的上表面以截断静电的结构，因此当暂时产生高电压静电时，通过 防静电布线被放电，从而能够有效地保护下部的像素电路免受静电。

公开(公告)号：US20130314148A1

公开(公告)日：2013-11-28

申请号：US13556551

申请日：2012-07-24

Applicant: Moon Hyo Kang ,  Ji Ho Hur

Inventor： Moon Hyo Kang ,  Ji Ho Hur

IPC: H03K17/975

CPC classification number: G06K9/0002 ,  H03K17/9622

Abstract: The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal.

Abstract translation: 根据本发明的示例性实施例的电容式指纹传感器包括：用于感测人类指纹的指纹感测电极Cfp; 其中流过其中的电流量根据指纹感测电极Cfp的输出电压而变化的第一晶体管T1; 其中流过其中的电流量由于流过第一晶体管T1的电流之间的差异而变化的第二晶体管T2; 以及第三晶体管T3，其复位第一晶体管T1的栅电极，并经由脉冲信号提供与第一晶体管T1的栅电极的电容耦合。

公开(公告)号：US07944415B2

公开(公告)日：2011-05-17

申请号：US11396925

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/145 ,  G09G2360/148

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract translation: 公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。 由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。 因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。 此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

公开(公告)号：US20070024547A1

公开(公告)日：2007-02-01

申请号：US11396925

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/145 ,  G09G2360/148

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract translation: 公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。 由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。 因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。 此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。