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    Damping segmental ring structure for subway tunnels built in grim environments of deformable ground
    1.
    发明授权
    Damping segmental ring structure for subway tunnels built in grim environments of deformable ground 有权

    公开(公告)号：US11719308B1

    公开(公告)日：2023-08-08

    申请号：US17112984

    申请日：2020-12-05

    Applicant: Dongyuan Wang ,  Long Shi ,  Jianguo Fan ,  Jixiang Li ,  Ying Han

    Inventor： Dongyuan Wang ,  Long Shi ,  Jianguo Fan ,  Jixiang Li ,  Ying Han

    IPC: F16F15/08 ,  B61B13/10 ,  F16F3/10

    CPC classification number: F16F15/085 ,  B61B13/10 ,  F16F3/10 ,  F16F2224/025 ,  F16F2224/0208 ,  F16F2226/04 ,  F16F2228/007 ,  F16F2230/0005 ,  F16F2230/30 ,  F16F2234/02

    Abstract: The present invention of damping segmental ring structure for subway tunnels built in grim environments of deformable ground can mitigate the stress-concentration of the tunnel lining structures. The deformable ground can be caused by differential settlement or high-intensity earthquakes. Embodiments of the invention have self-adjustment features and forms for deformation and rotation, which comprise one adapter in the middle, two transitional grooved segmental structures, and an internal steel tube. All three forms comprised 3 or 4 pieces with the same features so they can be easily installed, transported and erected on sites and bolts are used to bolt them together to form an integrity structure with damping characteristics. The damper placed in the middle comprises two loading plates that form the shell of the damper, the internal core of the damper which includes interbedded installed rubber pads and steel plates within the loading plates and spring systems that compress the internal core. The springs are locked to the loading plates using locking clamps and the loading plates are bolted to the transitional grooved segmental ring structures, and the transitional grooved segmental ring structures are bolted themselves in the circumferential direction to form a ring structure and bolted with the regular segmental ring structures in the longitudinal direction. The internal steel tube is concentric with the damper but has a smaller diameter so it can support the damper by fastening the counter-reaction bolts installed in the bent-up flanges of each piece. Waterproof anti-slippery rubber pads are placed in all interfaces between the damper, and the transitional segmental ring structure, the regular segmental ring structure and the internal steel tube. The invention of the damping segmental ring structure has self-adjustment capabilities for deformation and rotation whereas the stiffness remains sufficient to resist soil and groundwater pressure. The invented damping segmental ring structure can be manufactured in factories that manufacture the regular segmental ring structure and can be shipped to and installed on-site using the same equipment that installs the regular segmental ring structure. The internal steel tube provides double-safety for the stiffness of the damper and the supports can be adjusted during tunnel operations.

    System and method for manufacturing contact
    4.
    发明授权
    System and method for manufacturing contact 有权
    制造接触的系统和方法

    公开(公告)号：US08828867B2

    公开(公告)日：2014-09-09

    申请号：US11950370

    申请日：2007-12-04

    Applicant: Tao Han ,  Jianguo Fan

    Inventor： Tao Han ,  Jianguo Fan

    IPC: H01L21/768 ,  H01L21/316

    CPC classification number: H01L21/316 ,  H01L21/76843 ,  H01L21/76856

    Abstract: System and method for manufacturing contact. According to an embodiment, the present invention provides a method for manufacturing integrated circuits. The method includes a step for providing a semiconductor substrate. The method also includes a step for defining a plurality of contact regions on the semiconductor substrate. The method further includes a step for forming a plurality of dielectric structures on the plurality of contact regions. Additionally, the method includes a step for forming a plurality of openings on the semiconductor substrate. For example, each of the openings is characterized by at least a depth, a width, and an aspect ratio. Furthermore, the method includes a step for performing deposition within the openings using a first type of material, which includes a titanium material. The method additionally includes a step for performing annealing at a predetermined set of conditions.

    Abstract translation: 制造接触的系统和方法。 根据实施例，本发明提供一种用于制造集成电路的方法。 该方法包括提供半导体衬底的步骤。 该方法还包括在半导体衬底上限定多个接触区域的步骤。 该方法还包括在多个接触区域上形成多个电介质结构的步骤。 此外，该方法包括在半导体衬底上形成多个开口的步骤。 例如，每个开口的特征在于至少深度，宽度和纵横比。 此外，该方法包括使用包括钛材料的第一类型的材料在开口内进行沉积的步骤。 该方法另外包括在预定条件下执行退火的步骤。

    SYSTEM AND METHOD FOR MANUFACTURING CONTACT
    6.
    发明申请
    SYSTEM AND METHOD FOR MANUFACTURING CONTACT 有权
    制造联系人的系统和方法

    公开(公告)号：US20080138981A1

    公开(公告)日：2008-06-12

    申请号：US11950370

    申请日：2007-12-04

    Applicant: Tao Han ,  Jianguo Fan

    Inventor： Tao Han ,  Jianguo Fan

    IPC: H01L21/768

    CPC classification number: H01L21/316 ,  H01L21/76843 ,  H01L21/76856

    Abstract: System and method for manufacturing contact. According to an embodiment, the present invention provides a method for manufacturing integrated circuits. The method includes a step for providing a semiconductor substrate. The method also includes a step for defining a plurality of contact regions on the semiconductor substrate. The method further includes a step for forming a plurality of dielectric structures on the plurality of contact regions. Additionally, the method includes a step for forming a plurality of openings on the semiconductor substrate. For example, each of the openings is characterized by at least a depth, a width, and an aspect ratio. Furthermore, the method includes a step for performing deposition within the openings using a first type of material, which includes a titanium material. The method additionally includes a step for performing annealing at a predetermined set of conditions.

    Abstract translation: 制造接触的系统和方法。 根据实施例，本发明提供一种用于制造集成电路的方法。 该方法包括提供半导体衬底的步骤。 该方法还包括在半导体衬底上限定多个接触区域的步骤。 该方法还包括在多个接触区域上形成多个电介质结构的步骤。 此外，该方法包括在半导体衬底上形成多个开口的步骤。 例如，每个开口的特征在于至少深度，宽度和纵横比。 此外，该方法包括使用包括钛材料的第一类型的材料在开口内进行沉积的步骤。 该方法另外包括在预定条件下执行退火的步骤。

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