公开(公告)号：US08697518B2

公开(公告)日：2014-04-15

申请号：US13377029

申请日：2010-06-04

申请人： Gang Ji ,  Jianping Gu ,  Kaibin Ni ,  Tianbing Zhong

发明人： Gang Ji ,  Jianping Gu ,  Kaibin Ni ,  Tianbing Zhong

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/4958 ,  H01L29/66727 ,  H01L29/66734

摘要： A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.

摘要翻译： 公开了具有沟槽接触孔的沟槽MOSFET及其制造方法。 MOSFET包括N型衬底，衬底上的N型外延层; 外延层顶部的P阱区; 形成在P阱区上的源区; 源区上的氧化物层; 多个沟槽，其穿过源极区域和P阱区域并与外延层接触; 形成在沟槽中的栅极氧化物层和多晶硅; 源极接触孔和栅极接触孔，其中源极接触孔和栅极接触孔分别依次具有钛金属层，氮化钛层和钨金属; P +植入区域; 形成在源极接触孔上方的源电极和形成在栅极接触孔上方的栅电极。

公开(公告)号：US20090087026A1

公开(公告)日：2009-04-02

申请号：US12180850

申请日：2008-07-28

申请人： Yali Xie ,  Qitian Miao ,  Hua Peng ,  Kejun Kang ,  Haifeng Hu ,  Zhiqiang Chen ,  Xueguang Cao ,  Chuanxiang Tang ,  Jianping Gu ,  Xuewu Wang ,  Hongsheng Wen ,  Bei He ,  Yaohong Liu ,  Shangmin Sun ,  Quanwei Song ,  Jin Lin ,  Xianli Ding

发明人： Yali Xie ,  Qitian Miao ,  Hua Peng ,  Kejun Kang ,  Haifeng Hu ,  Zhiqiang Chen ,  Xueguang Cao ,  Chuanxiang Tang ,  Jianping Gu ,  Xuewu Wang ,  Hongsheng Wen ,  Bei He ,  Yaohong Liu ,  Shangmin Sun ,  Quanwei Song ,  Jin Lin ,  Xianli Ding

IPC分类号： G06K9/00

CPC分类号： G01N23/04 ,  G01N2223/414 ,  G01N2223/423 ,  G06T7/593 ,  G06T2207/10116

摘要： The present invention provides a method and system of material identification using binocular steroscopic and multi-energy transmission image. With the method, any obstacle that dominates the ray absorption can be peeled off from the objects that overlap in the direction of a ray beam. The object that is unobvious due to a relatively small amount of ray absorption will thus stand out, and the material property of the object, such as organic, mixture, metal and the like can be identified. This method lays a fundament for automatic identification of harmful objects, such as explosive, drugs, etc., concealed in a freight container.

摘要翻译： 本发明提供使用双目立体和多能透射图像的材料识别方法和系统。 利用该方法，可以从支配射线吸收的任何障碍物从与射线束的方向重叠的物体剥离。 因此，由于相对少量的光线吸收而不明显的物体将脱颖而出，并且可以识别物体的材料性质，例如有机物，混合物，金属等。 这种方法为自动识别隐藏在货运集装箱中的有害物体（如爆炸物，药物等）奠定了基础。

公开(公告)号：US20080205590A1

公开(公告)日：2008-08-28

申请号：US11955863

申请日：2007-12-13

申请人： Yali Xie ,  Qitian Miao ,  Yuanjing Li ,  Hua Peng ,  Xueguang Cao ,  Hongsheng Wen ,  Yaohong Liu ,  Quanwei Song ,  Jianping Gu ,  Jin Lin ,  Hongbo Yang ,  Pingan Luo

发明人： Yali Xie ,  Qitian Miao ,  Yuanjing Li ,  Hua Peng ,  Xueguang Cao ,  Hongsheng Wen ,  Yaohong Liu ,  Quanwei Song ,  Jianping Gu ,  Jin Lin ,  Hongbo Yang ,  Pingan Luo

IPC分类号： A61B6/02

CPC分类号： G01V5/0058 ,  A61B6/022 ,  G01N23/04 ,  G06T7/593 ,  G06T2207/10116 ,  G06T2207/30112

摘要： In a binocular steroscopic scanning radiographic imaging method, X-rays emitted by the same radiation source are used. The X-rays pass through a double-slit collimator to form two X-ray beam sectors, which are symmetric or asymmetric and have an angle between them. The X-ray beam sectors, after penetrating through an object under detection, are received by the left and right detector array, respectively, then converted into electric signals to be inputted to the respective image acquisition systems, and received by a computer processing system for image processing and displaying. A system corresponding to the method comprises a radiation source, a beam controller, two mutually connected arms of detector arrays, image acquisition systems connected respectively to each of the detector arrays and a computer processing system. The present invention can display the transmission images detected by each of the detector arrays as well as tomograms with different depth reconstructed from the transmission images according to the principle of parallax. The present invention is convenient, fast in detection and realizes with low cost the recognition of objects of different depths.

摘要翻译： 在双目立体扫描放射线照相成像方法中，使用由相同的辐射源发射的X射线。 X射线穿过双缝准直器以形成两个X射线束扇区，它们是对称的或非对称的，并在它们之间具有一个角度。 X射线束扇区在穿透被检测物体之后，分别被左右检测器阵列接收，然后被转换成电信号以输入到各个图像采集系统，并被计算机处理系统接收 图像处理和显示。 对应于该方法的系统包括辐射源，光束控制器，检测器阵列的两个相互连接的臂，分别连接到每个检测器阵列的图像采集系统和计算机处理系统。 根据视差的原理，本发明可以显示由每个检测器阵列检测的透射图像以及从透射图像重建的不同深度的断层图像。 本发明方便，检测快，实现了低成本识别不同深度的物体。

公开(公告)号：US20130214349A1

公开(公告)日：2013-08-22

申请号：US13882255

申请日：2010-10-29

申请人： Jianping Gu ,  Gang Ji ,  Kaibin Ni ,  Tianbin Zhong

发明人： Jianping Gu ,  Gang Ji ,  Kaibin Ni ,  Tianbin Zhong

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66666 ,  H01L29/41766 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： A trench MOSFET sidewall structure includes a heavily doped substrate, a lightly doped epitaxial layer, a lightly doped well and a heavily doped source adjacent to one another to form a semiconductor substrate. Multiple trenches as well as multiple contact holes are defined in the substrate and each contact hole respectively is defined between two adjacent trenches. A top portion of the contact hole has a size larger than that of a bottom portion of the contact hole.

摘要翻译： 沟槽MOSFET侧壁结构包括重掺杂衬底，轻掺杂外延层，轻掺杂阱和彼此相邻的重掺杂源，以形成半导体衬底。 多个沟槽以及多个接触孔被限定在衬底中，并且每个接触孔分别限定在两个相邻沟槽之间。 接触孔的顶部的尺寸大于接触孔底部的尺寸。

公开(公告)号：US07545906B2

公开(公告)日：2009-06-09

申请号：US11955863

申请日：2007-12-13

申请人： Yali Xie ,  Qitian Miao ,  Yuanjing Li ,  Hua Peng ,  Xueguang Cao ,  Hongsheng Wen ,  Yaohong Liu ,  Quanwei Song ,  Jianping Gu ,  Jin Lin ,  Hongbo Yang ,  Pingan Luo

发明人： Yali Xie ,  Qitian Miao ,  Yuanjing Li ,  Hua Peng ,  Xueguang Cao ,  Hongsheng Wen ,  Yaohong Liu ,  Quanwei Song ,  Jianping Gu ,  Jin Lin ,  Hongbo Yang ,  Pingan Luo

IPC分类号： G01N23/00

CPC分类号： G01V5/0058 ,  A61B6/022 ,  G01N23/04 ,  G06T7/593 ,  G06T2207/10116 ,  G06T2207/30112

摘要： In a binocular steroscopic scanning radiographic imaging method, X-rays emitted by the same radiation source are used. The X-rays pass through a double-slit collimator to form two X-ray beam sectors, which are symmetric or asymmetric and have an angle between them. The X-ray beam sectors, after penetrating through an object under detection, are received by the left and right detector array, respectively, then converted into electric signals to be inputted to the respective image acquisition systems, and received by a computer processing system for image processing and displaying. A system corresponding to the method comprises a radiation source, a beam controller, two mutually connected arms of detector arrays, image acquisition systems connected respectively to each of the detector arrays and a computer processing system. The present invention can display the transmission images detected by each of the detector arrays as well as tomograms with different depth reconstructed from the transmission images according to the principle of parallax. The present invention is convenient, fast in detection and realizes with low cost the recognition of objects of different depths.

摘要翻译： 在双目立体扫描放射线照相成像方法中，使用由相同的辐射源发射的X射线。 X射线穿过双缝准直器以形成两个X射线束扇区，它们是对称的或非对称的，并在它们之间具有一个角度。 X射线束扇区在穿透被检测物体之后，分别被左右检测器阵列接收，然后被转换成电信号以输入到各个图像采集系统，并被计算机处理系统接收 图像处理和显示。 对应于该方法的系统包括辐射源，光束控制器，检测器阵列的两个相互连接的臂，分别连接到每个检测器阵列的图像采集系统和计算机处理系统。 根据视差的原理，本发明可以显示由每个检测器阵列检测的透射图像以及从透射图像重建的不同深度的断层图像。 本发明方便，检测快，实现了低成本识别不同深度的物体。

公开(公告)号：US08194953B2

公开(公告)日：2012-06-05

申请号：US12180850

申请日：2008-07-28

申请人： Yali Xie ,  Qitian Miao ,  Hua Peng ,  Kejun Kang ,  Haifeng Hu ,  Zhiqiang Chen ,  Xueguang Cao ,  Chuanxiang Tang ,  Jianping Gu ,  Xuewu Wang ,  Hongsheng Wen ,  Bei He ,  Yaohong Liu ,  Shangmin Sun ,  Quanwei Song ,  Jin Lin ,  Xianli Ding

发明人： Yali Xie ,  Qitian Miao ,  Hua Peng ,  Kejun Kang ,  Haifeng Hu ,  Zhiqiang Chen ,  Xueguang Cao ,  Chuanxiang Tang ,  Jianping Gu ,  Xuewu Wang ,  Hongsheng Wen ,  Bei He ,  Yaohong Liu ,  Shangmin Sun ,  Quanwei Song ,  Jin Lin ,  Xianli Ding

IPC分类号： G21K4/00 ,  G06K9/46

CPC分类号： G01N23/04 ,  G01N2223/414 ,  G01N2223/423 ,  G06T7/593 ,  G06T2207/10116

摘要： The present invention provides a method and system of material identification using binocular steroscopic and multi-energy transmission image. With the method, any obstacle that dominates the ray absorption can be peeled off from the objects that overlap in the direction of a ray beam. The object that is unobvious due to a relatively small amount of ray absorption will thus stand out, and the material property of the object, such as organic, mixture, metal and the like can be identified. This method lays a fundament for automatic identification of harmful objects, such as explosive, drugs, etc., concealed in a freight container.

摘要翻译： 本发明提供使用双目立体和多能透射图像的材料识别方法和系统。 利用该方法，可以从支配射线吸收的任何障碍物从与射线束的方向重叠的物体剥离。 因此，由于相对少量的光线吸收而不明显的物体将脱颖而出，并且可以识别物体的材料性质，例如有机物，混合物，金属等。 这种方法为自动识别隐藏在货运集装箱中的有害物体（如爆炸物，药物等）奠定了基础。

公开(公告)号：US20120091523A1

公开(公告)日：2012-04-19

申请号：US13377029

申请日：2010-06-04

申请人： Gang Ji ,  Jianping Gu ,  Kaibin Ni ,  Tianbing Zhong

发明人： Gang Ji ,  Jianping Gu ,  Kaibin Ni ,  Tianbing Zhong

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/4958 ,  H01L29/66727 ,  H01L29/66734

摘要： A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.

摘要翻译： 公开了具有沟槽接触孔的沟槽MOSFET及其制造方法。 MOSFET包括N型衬底，衬底上的N型外延层; 外延层顶部的P阱区; 形成在P阱区上的源区; 源区上的氧化物层; 多个沟槽，其穿过源极区域和P阱区域并与外延层接触; 形成在沟槽中的栅极氧化物层和多晶硅; 源极接触孔和栅极接触孔，其中源极接触孔和栅极接触孔分别依次具有钛金属层，氮化钛层和钨金属; P +植入区域; 形成在源极接触孔上方的源电极和形成在栅极接触孔上方的栅电极。