公开(公告)号：US07105427B1

公开(公告)日：2006-09-12

申请号：US10929939

申请日：2004-08-30

申请人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

发明人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

IPC分类号： H01L21/425

CPC分类号： H01L21/2254 ,  H01L21/2257 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/34

摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

摘要翻译： 在半导体晶片的表面附近引入空位和掺杂离子。 通过间隙机制扩散的掺杂​​离子具有大大降低的扩散率，这导致非常低的电阻率掺杂区域和非常浅的结。

公开(公告)号：US06835626B2

公开(公告)日：2004-12-28

申请号：US10621967

申请日：2003-07-17

申请人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

发明人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

IPC分类号： H01L21336

CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/324

摘要： A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

摘要翻译： 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定结的方法包括以下步骤：将掺杂剂离子注入到表面层中; 清洁和氧化表面层，并对晶片进行两次退火，以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围，持续时间约为几分之一秒至小于约1000秒，斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时，更优选约60秒至约1小时。 退火过程都包括冷却过程。

公开(公告)号：US06493411B1

公开(公告)日：2002-12-10

申请号：US08724431

申请日：1996-10-01

申请人： Wei-Kan Chu ,  Jiarui Liu

发明人： Wei-Kan Chu ,  Jiarui Liu

IPC分类号： G21G102

CPC分类号： H01L39/2483 ,  G21G1/06 ,  H01L39/249

摘要： Thermal neutron irradiation of superconducting body compositions into which Li or B has been incorporated as a unit cell external or internal dopant introduces by the nuclear reaction of the dopant pinning centers which substantially improve the critical current density of the body.

摘要翻译： 通过掺杂剂钉扎中心的核反应引入其中掺入有Li或B的单体电池外部或内部掺杂物的超导体组合物的热中子照射，其显着改善了本体的临界电流密度。

公开(公告)号：US20050260836A1

公开(公告)日：2005-11-24

申请号：US10523127

申请日：2003-07-17

申请人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

发明人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/425

CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/324

摘要： A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

摘要翻译： 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定的电荷的方法包括以下步骤：将掺杂剂离子注入到表面层中; 清洁和氧化表面层，并对晶片进行两次退火，以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围，持续时间约为几分之一秒至小于约1000秒，斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时，更优选约60秒至约1小时。 退火过程都包括冷却过程。

公开(公告)号：US20100193685A1

公开(公告)日：2010-08-05

申请号：US11993684

申请日：2006-06-29

申请人： Wei-kan Chu ,  Jiarui Liu

发明人： Wei-kan Chu ,  Jiarui Liu

IPC分类号： G01N23/00 ,  G21B1/00

CPC分类号： H05H3/06 ,  H05H6/00

摘要： This miniature neutron generator is for active detection of highly enriched uranium using a movable detection system. It is a small size, lightweight, low power consumption neutron generator with ease of operation and maintenance. The detector is based on a simplified ion source and ion transport system.

摘要翻译： 该微型中子发生器用于使用可移动检测系统主动检测高浓缩铀。 它是一种体积小，重量轻，功耗低的中子发生器，易于操作和维护。 检测器基于简化的离子源和离子传输系统。

公开(公告)号：US06812523B1

公开(公告)日：2004-11-02

申请号：US10237417

申请日：2002-09-09

申请人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

发明人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

IPC分类号： H01L2976

CPC分类号： H01L21/2254 ,  H01L21/2257 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/34

摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

摘要翻译： 在半导体晶片的表面附近引入空位和掺杂离子。 通过间隙机制扩散的掺杂​​离子具有大大降低的扩散率，这导致非常低的电阻率掺杂区域和非常浅的结。