公开(公告)号：US07105427B1

公开(公告)日：2006-09-12

申请号：US10929939

申请日：2004-08-30

申请人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

发明人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

IPC分类号： H01L21/425

CPC分类号： H01L21/2254 ,  H01L21/2257 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/34

摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

摘要翻译： 在半导体晶片的表面附近引入空位和掺杂离子。 通过间隙机制扩散的掺杂​​离子具有大大降低的扩散率，这导致非常低的电阻率掺杂区域和非常浅的结。

公开(公告)号：US06812523B1

公开(公告)日：2004-11-02

申请号：US10237417

申请日：2002-09-09

申请人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

发明人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

IPC分类号： H01L2976

CPC分类号： H01L21/2254 ,  H01L21/2257 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/34

摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

摘要翻译： 在半导体晶片的表面附近引入空位和掺杂离子。 通过间隙机制扩散的掺杂​​离子具有大大降低的扩散率，这导致非常低的电阻率掺杂区域和非常浅的结。

公开(公告)号：US06835626B2

公开(公告)日：2004-12-28

申请号：US10621967

申请日：2003-07-17

申请人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

发明人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

IPC分类号： H01L21336

CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/324

摘要： A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

摘要翻译： 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定结的方法包括以下步骤：将掺杂剂离子注入到表面层中; 清洁和氧化表面层，并对晶片进行两次退火，以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围，持续时间约为几分之一秒至小于约1000秒，斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时，更优选约60秒至约1小时。 退火过程都包括冷却过程。

公开(公告)号：US20050260836A1

公开(公告)日：2005-11-24

申请号：US10523127

申请日：2003-07-17

申请人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

发明人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/425

CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/324

摘要： A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

摘要翻译： 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定的电荷的方法包括以下步骤：将掺杂剂离子注入到表面层中; 清洁和氧化表面层，并对晶片进行两次退火，以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围，持续时间约为几分之一秒至小于约1000秒，斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时，更优选约60秒至约1小时。 退火过程都包括冷却过程。

公开(公告)号：US07622372B1

公开(公告)日：2009-11-24

申请号：US11518755

申请日：2006-09-11

申请人： Wei-Kan Chu ,  Lin Shao

发明人： Wei-Kan Chu ,  Lin Shao

IPC分类号： H01L21/04 ,  H01L21/425

CPC分类号： H01L21/2254 ,  H01L21/2257 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/34

摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor layer structure. Implanted dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

摘要翻译： 在半导体层结构的表面附近引入空位和掺杂离子。 通过间隙机制扩散的注入掺杂剂离子的扩散率大大降低，这导致非常低的电阻率掺杂区域和非常浅的结。

公开(公告)号：USD947317S1

公开(公告)日：2022-03-29

申请号：US29716014

申请日：2019-12-05

申请人： Lin Shao

设计人： Lin Shao

公开(公告)号：US07153761B1

公开(公告)日：2006-12-26

申请号：US11243010

申请日：2005-10-03

申请人： Michael A. Nastasi ,  Lin Shao ,  N. David Theodore

发明人： Michael A. Nastasi ,  Lin Shao ,  N. David Theodore

IPC分类号： H01L21/322

CPC分类号： H01L21/76254

摘要： A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

摘要翻译： 将薄半导体层从一个衬底转移到另一个衬底的方法包括在具有表面污染物的衬底上沉积薄的外延单晶半导体层。 在沉积层和基板之间形成包含污染物的界面。 氢原子被引入到结构中并允许扩散到界面。 之后，薄的半导体层被结合到第二衬底上，并且薄层在界面处被分开，这导致将薄的外延半导体层从一个衬底转移到另一个衬底。

公开(公告)号：US20090056794A1

公开(公告)日：2009-03-05

申请号：US11951962

申请日：2007-12-06

申请人： Lin Shao ,  Mark Hollander

发明人： Lin Shao ,  Mark Hollander

IPC分类号： H01L31/00

CPC分类号： H01L31/035272 ,  B82Y15/00 ,  B82Y20/00 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present disclosure is directed to a system and method for operating a device including embedded nanoparticles. In some implementations, the method includes selectively illuminating at least a portion of a device including material having embedded nanoparticles. The nanoparticles emit electrons in response to light at a certain frequency or above. At least one operating parameter of the device is adjusted to direct at least a portion of the emitted electrons.

摘要翻译： 本公开涉及用于操作包括嵌入式纳米颗粒的装置的系统和方法。 在一些实施方案中，该方法包括选择性地照射包括具有嵌入的纳米颗粒的材料的装置的至少一部分。 纳米颗粒响应于一定频率以上的光而发射电子。 调整装置的至少一个操作参数以引导发射的电子的至少一部分。

公开(公告)号：US20060270190A1

公开(公告)日：2006-11-30

申请号：US11137979

申请日：2005-05-25

申请人： Michael Nastasi ,  Lin Shao ,  Phillip Thompson ,  Silvanus Lau ,  N. Theodore ,  Terry Alford ,  James Mayer

发明人： Michael Nastasi ,  Lin Shao ,  Phillip Thompson ,  Silvanus Lau ,  N. Theodore ,  Terry Alford ,  James Mayer

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves deposition of a doped semiconductor layer on a substrate and epitaxial growth of a thin, monocrystalline, semiconductor layer on the doped layer. After bonding the thin epitaxial monocrystalline semiconductor layer to a second substrate, hydrogen is introduced into the doped layer, and the thin layer is cleaved and transferred to the second substrate, with the cleaving controlled to happen at the doped layer.

摘要翻译： 将单晶薄层从第一衬底转移到第二衬底上的方法包括在衬底上沉积掺杂半导体层，并在掺杂层上沉积薄的单晶半导体层。 在将薄的外延单晶半导体层接合到第二衬底之后，将氢引入到掺杂层中，并且薄层被切割并转移到第二衬底，其中解理被控制在掺杂层发生。

公开(公告)号：US07638410B2

公开(公告)日：2009-12-29

申请号：US11641471

申请日：2006-12-18

申请人： Michael A. Nastasi ,  Lin Shao

发明人： Michael A. Nastasi ,  Lin Shao

IPC分类号： H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2924/30105

摘要： The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

摘要翻译： 应变半导体层从一个衬底到另一个衬底的转移涉及在具有表面污染物的衬底上沉积多层结构。 在沉积层和基板之间形成包含污染物的界面。 氢原子被引入到结构中并允许扩散到界面。 之后，将沉积的多层结构结合到第二衬底并在界面处分离，这导致将多层结构从一个衬底转移到另一个衬底。 多层结构包括至少一个应变半导体层和至少一个应变诱导种子层。 在层转移之后，应变诱导的种子层可以任选地蚀刻掉。