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公开(公告)号：US11711986B2
公开(公告)日：2023-07-25
申请号：US16627703
申请日：2017-11-30
Applicant: Microsoft Technology Licensing, LLC
Inventor： Peter Krogstrup Jeppesen
IPC: H01L27/18 , C23C14/28 , C30B11/12 , H01L29/06 , H01L39/22 , H01L39/24 , H01L39/06 , C30B23/06 , G06N10/00 , B82Y10/00
CPC classification number: H01L27/18 , C23C14/28 , C30B11/12 , C30B23/06 , H01L29/0669 , H01L39/06 , H01L39/22 , H01L39/24 , H01L39/248 , H01L39/249 , B82Y10/00 , G06N10/00
Abstract: A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.
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公开(公告)号：US09947441B2
公开(公告)日：2018-04-17
申请号：US14077901
申请日：2013-11-12
Inventor： Connie P. Wang , Paul Murphy , Paul Sullivan
CPC classification number: H01B12/06 , H01B13/30 , H01L39/143 , H01L39/16 , H01L39/2458 , H01L39/2461 , H01L39/2464 , H01L39/249 , H02H9/023
Abstract: An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.
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公开(公告)号：US20150148236A1
公开(公告)日：2015-05-28
申请号：US14092296
申请日：2013-11-27
Inventor： Connie P. Wang , Paul Murphy , Paul Sullivan , Sukti Chatterjee
CPC classification number: H01L39/128 , H01L39/2464 , H01L39/249 , Y10T428/24174
Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.
Abstract translation: 形成超导体的方法包括将设置在衬底上的层暴露于氧环境中，并且选择性地退火该层的一部分以在该层内形成超导区域。
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4.发明申请公开(公告)号：US20140054552A1
公开(公告)日：2014-02-27
申请号：US13771330
申请日：2013-02-20
Applicant: Hypres, Inc.
Inventor： Sergey K. Tolpygo
CPC classification number: H01L27/18 , H01L39/025 , H01L39/12 , H01L39/223 , H01L39/2406 , H01L39/249 , H01L39/2493
Abstract: An improved microfabrication technique for Josephson junctions in superconducting integrated circuits, based on the use of a double-layer lithographic mask for partial anodization of the side-walls and base electrode of the junctions. The top layer of the mask is a resist material, and the bottom layer is a dielectric material chosen so to maximize adhesion between the resist and the underlying superconducting layer, be etch-compatible with the underlying superconducting layer, and be insoluble in the resist and anodization processing chemistries. The superconductor is preferably niobium, under a silicon dioxide layer, with a conventional photoresist or electron-beam resist as the top layer. This combination results in a substantial increase in the fabrication yield of high-density superconducting integrated circuits, increase in junction uniformity and reduction in defect density. A dry etch more compatible with microlithography may be employed.
Abstract translation: 基于使用双层光刻掩模对结点的侧壁和基极进行部分阳极氧化的改进的超导集成电路中约瑟夫森结的微细加工技术。 掩模的顶层是抗蚀剂材料，并且底层是选择的电介质材料，以使抗蚀剂和下面的超导层之间的粘合力最大化，与下面的超导层进行蚀刻兼容，并且不溶于抗蚀剂， 阳极氧化处理化学品。 超导体优选是在二氧化硅层下的铌，其中常规的光致抗蚀剂或电子束抗蚀剂作为顶层。 这种组合导致高密度超导集成电路的制造产量的显着增加，结点均匀性的增加和缺陷密度的降低。 可以采用与微光刻相容的干蚀刻。
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公开(公告)号：US06574852B2
公开(公告)日：2003-06-10
申请号：US10074788
申请日：2001-10-29
Applicant: Dawei Zhou
Inventor： Dawei Zhou
IPC: H01L3924
CPC classification number: C04B35/45 , C04B35/64 , H01L39/02 , H01L39/2419 , H01L39/248 , H01L39/249 , Y10S505/739 , Y10S505/74 , Y10T29/49014
Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide provides are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic filed can be applied during the heat treatment. The microscopic method of producing a high-Tc superconducting ceramic oxide product includes the steps of making a high-Tc superconducting ceramic oxide thin film; optionally sintering the deposited thin film in a magnetic filed; and removing partial oxygen content of the thin film by a scanning tunneling electron treatment machine to form a microscopic insulation layer between two high-Tc superconducting domains of the thin film.
Abstract translation: 高Tc超导陶瓷氧化物产品以及制造这种高Tc超导产品的宏观和微观方法。 完全密封的高Tc超导陶瓷氧化物通过宏观方法制备，包括将超导陶瓷氧化物粉末压制成对氧惰性的材料的中空体; 在足以烧结陶瓷氧化物粉末的条件下热处理超导陶瓷氧化物粉末包装体; 然后密封身体的任何开口。 可选地，在热处理期间可以施加交替磁场的波形或多个脉冲。 制造高Tc超导陶瓷氧化物产品的微观方法包括制备高Tc超导陶瓷氧化物薄膜的步骤; 任选地在磁场中烧结沉积的薄膜; 并通过扫描隧道电子处理机去除薄膜的部分氧含量，以在薄膜的两个高Tc超导畴之间形成微观绝缘层。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20020095765A1
公开(公告)日：2002-07-25
申请号：US10074788
申请日：2001-10-29
Inventor： Dawei Zhou
IPC: H01L039/24 , H01B001/00
CPC classification number: C04B35/45 , C04B35/64 , H01L39/02 , H01L39/2419 , H01L39/248 , H01L39/249 , Y10S505/739 , Y10S505/74 , Y10T29/49014
Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide provides are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic filed can be applied during the heat treatment. The microscopic method of producing a high-Tc superconducting ceramic oxide product includes the steps of making a high-Tc superconducting ceramic oxide thin film; optionally sintering the deposited thin film in a magnetic filed; and removing partial oxygen content of the thin film by a scanning tunneling electron treatment machine to form a microscopic insulation layer between two high-Tc superconducting domains of the thin film.
Abstract translation: 高Tc超导陶瓷氧化物产品以及制造这种高Tc超导产品的宏观和微观方法。 完全密封的高Tc超导陶瓷氧化物通过宏观方法制备，包括将超导陶瓷氧化物粉末压制成对氧惰性的材料的中空体; 在足以烧结陶瓷氧化物粉末的条件下热处理超导陶瓷氧化物粉末包装体; 然后密封身体的任何开口。 可选地，在热处理期间可以施加交替磁场的波形或多个脉冲。 制造高Tc超导陶瓷氧化物产品的微观方法包括制备高Tc超导陶瓷氧化物薄膜的步骤; 任选地在磁场中烧结沉积的薄膜; 并通过扫描隧道电子处理机去除薄膜的部分氧含量，以在薄膜的两个高Tc超导畴之间形成微观绝缘层。
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7.发明授权High-TC superconducting ceramic oxide products and macroscopic and microscopic methods of making the same 失效高温超导陶瓷氧化物产品及其制备方法及其微观方法
公开(公告)号：US5219832A
公开(公告)日：1993-06-15
申请号：US716929
申请日：1991-06-18
Applicant: Dawei Zhou
Inventor： Dawei Zhou
CPC classification number: H01L39/2419 , C04B35/45 , C04B35/64 , C04B37/001 , H01L39/143 , H01L39/249 , C04B2235/604 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/662 , C04B2235/665 , C04B2235/667 , C04B2237/34 , C04B2237/78 , H01L39/2496 , Y10S505/924 , Y10S505/925 , Y10T29/49014
Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide products are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic field can be applied during the heat treatment. The microscopic method of producing a high-Tc superconducting ceramic oxide product includes the steps of making a high-Tc superconducting ceramic oxide thin film; optionally sintering the deposited thin film in a magnetic field; and removing partial oxygen content of the thin film by a scanning tunneling electron treatment machine to form a microscopic insulation layer between two high-Tc superconducting domains of the thin film.
Abstract translation: 高Tc超导陶瓷氧化物产品以及制造这种高Tc超导产品的宏观和微观方法。 完全密封的高Tc超导陶瓷氧化物产品通过宏观方法制造，包括将超导陶瓷氧化物粉末压制成对氧惰性的材料的中空体; 在足以烧结陶瓷氧化物粉末的条件下热处理超导陶瓷氧化物粉末包装体; 然后密封身体的任何开口。 可选地，可以在热处理期间施加交替磁场的波形或多个脉冲。 制造高Tc超导陶瓷氧化物产品的微观方法包括制备高Tc超导陶瓷氧化物薄膜的步骤; 可选地在磁场中烧结沉积的薄膜; 并通过扫描隧道电子处理机去除薄膜的部分氧含量，以在薄膜的两个高Tc超导畴之间形成微观绝缘层。
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8.发明授权
公开(公告)号：US5096882A
公开(公告)日：1992-03-17
申请号：US178905
申请日：1988-04-07
Applicant: Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
Inventor： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
IPC: C01G3/00 , C01B13/14 , C01G1/00 , C04B35/00 , C04B35/45 , C04B41/80 , H01B12/00 , H01B13/00 , H01F6/06 , H01F41/04 , H01L39/12 , H01L39/14 , H01L39/24
CPC classification number: H01L39/2464 , H01F41/048 , H01F6/06 , H01L39/143 , H01L39/249 , H01L39/2496 , Y10S505/725 , Y10S505/73
Abstract: A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.
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9.发明授权Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film 失效薄复合氧化膜的制造方法和薄氧化膜的制造装置
公开(公告)号：US5016563A
公开(公告)日：1991-05-21
申请号：US400151
申请日：1989-08-29
Applicant: Toshiaki Murakami , Kazuyuki Moriwaki
Inventor： Toshiaki Murakami , Kazuyuki Moriwaki
IPC: C23C14/08 , C23C14/14 , C23C14/54 , C23C14/58 , C30B23/02 , C30B25/02 , H01L39/24 , H01L41/316 , H01L41/319 , H01L41/39
CPC classification number: C23C14/08 , C23C14/14 , C23C14/58 , C23C14/5833 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/22 , H01L39/2432 , H01L39/2451 , H01L39/249 , H01L41/1873 , H01L41/316 , H01L41/319 , Y10S117/906 , Y10S117/916 , Y10S117/918
Abstract: In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
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公开(公告)号：US3346425A
公开(公告)日：1967-10-10
申请号：US35637764
申请日：1964-04-01
Applicant: GEN ELECTRIC
Inventor： FLEISCHER ROBERT L
IPC: H01L39/24
CPC classification number: H01L39/249 , Y10S420/901 , Y10S505/805 , Y10S505/806 , Y10S505/815
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