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    Electrolyte for lithium ion rechargeable battery and lithium ion rechargeable battery including the same
    2.
    再颁专利
    Electrolyte for lithium ion rechargeable battery and lithium ion rechargeable battery including the same 有权
    电解液用于锂离子充电电池和锂离子充电电池包括相同

    公开(公告)号：USRE43724E1

    公开(公告)日：2012-10-09

    申请号：US12887466

    申请日：2010-09-21

    申请人： Jin Hee Kim ,  Jin Sung Kim ,  Yong Shik Kim

    发明人： Jin Hee Kim ,  Jin Sung Kim ,  Yong Shik Kim

    IPC分类号： H01M4/58

    CPC分类号： H01M10/0525 ,  H01M4/505 ,  H01M4/525 ,  H01M4/587 ,  H01M10/0567 ,  H01M10/0569

    摘要： The present invention is an electrolyte for a lithium ion rechargeable battery and a lithium ion rechargeable battery that includes the same. More particularly, the present invention discloses an electrolyte for a lithium ion rechargeable battery that provides excellent cycle life characteristics and high-temperatures storage stability and prevents a drop in discharge capacity of a battery at low temperature, and a lithium ion rechargeable battery including the same. The lithium ion rechargeable battery including the electrolyte provides improved cycle life characteristics and prevents the problems of a drop in discharge capacity at low temperature and high-temperature swelling through the formation of a stable SEI film at the initial charge cycle.

    摘要翻译： 本发明是一种用于锂离子可再充电电池的电解质和包括其的锂离子可再充电电池。 更具体地说，本发明公开了一种用于锂离子可再充电电池的电解质，其提供优异的循环寿命特性和高温储存稳定性，并且防止电池在低温下的放电容量下降，并且包括其的锂离子可再充电电池 。 包括电解质的锂离子可再充电电池提供了改善的循环寿命特性，并且防止了在初始充电循环下通过形成稳定的SEI膜在低温下的放电容量下降和高温膨胀的问题。

    Lithium ion secondary battery
    3.
    发明授权
    Lithium ion secondary battery 有权

    公开(公告)号：US08192873B2

    公开(公告)日：2012-06-05

    申请号：US13227869

    申请日：2011-09-08

    申请人： Won Chull Han ,  Chan Jung Kim ,  Jae Woong Kim ,  Jun Ho Kim ,  Jin Hee Kim ,  Ha Young Lee

    发明人： Won Chull Han ,  Chan Jung Kim ,  Jae Woong Kim ,  Jun Ho Kim ,  Jin Hee Kim ,  Ha Young Lee

    IPC分类号： H01M2/16

    CPC分类号： H01M2/166 ,  H01M2/145 ,  H01M2/18 ,  H01M10/0525

    摘要： A lithium ion secondary battery is provided. The lithium ion secondary battery generally comprises an electrode assembly, a container for accommodating the electrode assembly; and an electrolyte. The electrode assembly comprises two electrodes having opposite polarities and a separator. The separator comprises a porous membrane comprising clusters of ceramic particles. The porous membrane is formed by bonding the particle clusters with a binder. Each particle cluster is formed either by sintering or by dissolving and re-crystallizing all or a portion of the ceramic particles. The ceramic particles comprise a ceramic material having a band gap. Each particle cluster may have the shape of a grape bunch or a lamina, and may be formed by laminating scale or flake shaped ceramic particles.

    Electrode assembly having porous separator that contains an antacid and secondary battery having the same
    4.
    发明授权
    Electrode assembly having porous separator that contains an antacid and secondary battery having the same 有权
    具有多孔分离器的电极组件，该电极组件含有抗酸剂和二次电池

    公开(公告)号：US08178245B2

    公开(公告)日：2012-05-15

    申请号：US12426846

    申请日：2009-04-20

    申请人： Jin-Hee Kim

    发明人： Jin-Hee Kim

    IPC分类号： H01M2/16

    CPC分类号： H01M2/1646 ,  H01G11/30 ,  H01M10/0525 ,  Y02E60/13

    摘要： An electrode assembly and a secondary battery having the same are provided. The electrode assembly includes a positive electrode including a positive electrode active material layer, a negative electrode including a negative electrode active material layer, and a porous layer for separating the positive and negative electrodes from each other that is formed of a combination of a ceramic material having a particle size of about 50 to 300 nm (particle size distribution value: D50) and a binder. Moreover, the porous layer contains an antacid. The secondary battery having the electrode assembly has satisfactory lifespan and overcharge characteristics.

    摘要翻译： 提供一种电极组件和具有该电极组件的二次电池。 电极组件包括正极，其包括正极活性物质层，负极包括负极活性物质层，以及用于将正极和负极彼此分离的多孔层，其由陶瓷材料 具有约50至300nm的粒度（粒度分布值：D50）和粘合剂。 此外，多孔层含有抗酸剂。 具有电极组件的二次电池具有令人满意的寿命和过充电特性。

    Method of correcting a design pattern for an integrated circuit and an apparatus for performing the same
    8.
    发明授权
    Method of correcting a design pattern for an integrated circuit and an apparatus for performing the same 有权
    校正集成电路的设计图案的方法及其执行装置

    公开(公告)号：US07840917B2

    公开(公告)日：2010-11-23

    申请号：US12080381

    申请日：2008-04-02

    申请人： Choel-Hwyi Bae ,  Jin-Hee Kim ,  You-Seung Jin ,  Dong-Hun Lee

    发明人： Choel-Hwyi Bae ,  Jin-Hee Kim ,  You-Seung Jin ,  Dong-Hun Lee

    IPC分类号： G06F17/50

    CPC分类号： G03F1/72

    摘要： In an apparatus and method for automatically correcting a design pattern in view of different process defects, defect characteristic functions that indicate frequencies of each process defect independent from one another are generated, and a normalization factor that indicates relationships between the defect characteristic functions is determined. A general defect characteristic function indicating a frequency of general defects is generated using the defect characteristic functions and the normalization factor. The general defect causes the same process failure as caused by each of the process defects. The design pattern is modified using the general defect characteristic function in such a manner that the frequency of the general defects is minimized when at least one portion of the design pattern corresponding to the model pattern is transcribed on the substrate. Accordingly, the whole design pattern may be automatically corrected based on the general defect characteristic function.

    摘要翻译： 在用于根据不同的工艺缺陷自动校正设计图案的装置和方法中，生成指示彼此独立的各过程缺陷的频率的缺陷特征函数，并且确定指示缺陷特征函数之间的关系的归一化因子。 使用缺陷特征函数和归一化因子生成表示一般缺陷频率的一般缺陷特征函数。 一般缺陷导致由每个工艺缺陷引起的相同的过程故障。 使用一般缺陷特征函数修改设计图案，使得当在衬底上转录对应于模型图案的设计图案的至少一部分时，一般缺陷的频率最小化。 因此，可以基于一般缺陷特征函数自动校正整个设计图案。

    METHOD TO AUTHENTICATE DEVICE AND SERVICE, AND SYSTEM THEREOF
    9.
    发明申请
    METHOD TO AUTHENTICATE DEVICE AND SERVICE, AND SYSTEM THEREOF 有权
    认证设备和服务的方法及其系统

    公开(公告)号：US20100031329A1

    公开(公告)日：2010-02-04

    申请号：US12472662

    申请日：2009-05-27

    申请人： Jin-hee KIM ,  Kyong-yong YU ,  Moon Kyu KIM ,  Young-won SONG

    发明人： Jin-hee KIM ,  Kyong-yong YU ,  Moon Kyu KIM ,  Young-won SONG

    IPC分类号： H04L9/32

    CPC分类号： H04L63/0815 ,  H04W12/06 ,  H04W88/18

    摘要： A method to authenticate a device and service, and a system thereof, the authentication method including: requesting device authentication information from a device provider in order to receive a service from a service provider, distinct from the device provider, and receiving the device authentication information from the device provider, the device authentication information being used by the service provider to authenticate the device. Therefore, it is possible to perform a device authentication process and service authentication process more simply.

    摘要翻译： 一种验证设备和服务的方法及其系统，所述认证方法包括：从设备提供商请求设备认证信息，以从服务提供商接收不同于设备提供商的服务，以及接收设备认证信息 来自设备提供商的服务提供商使用的设备认证信息来认证设备。 因此，可以更简单地进行设备认证处理和服务认证处理。

    Non-volatile memory device and method of fabricating the same
    10.
    发明授权
    Non-volatile memory device and method of fabricating the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US07586137B2

    公开(公告)日：2009-09-08

    申请号：US11200491

    申请日：2005-08-09

    申请人： Ki-chul Kim ,  Geum-jong Bae ,  In-wook Cho ,  Byoung-jin Lee ,  Sang-su Kim ,  Jin-hee Kim ,  Byou-ree Lim

    发明人： Ki-chul Kim ,  Geum-jong Bae ,  In-wook Cho ,  Byoung-jin Lee ,  Sang-su Kim ,  Jin-hee Kim ,  Byou-ree Lim

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66833 ,  H01L21/28282 ,  H01L29/792

    摘要： A non-volatile memory device having an asymmetric channel structure is provided. The non-volatile memory device includes a semiconductor substrate, a source region and a drain region which are formed in the semiconductor substrate and doped with n-type impurities, a trapping structure which includes a tunneling layer, which is disposed on a predetermined region of the semiconductor substrate and through which charge carriers are tunneled, and a charge trapping layer, which is formed on the tunneling layer and traps the tunneled charge carriers, a gate insulating layer which is formed on the trapping structure and the exposed semiconductor substrate, a gate electrode which is formed on the gate insulating layer, and a channel region which is formed between the source region and the drain region and includes a first channel region formed on a lower part of the trapping structure and a second channel region formed on a lower part of the gate insulating layer, the threshold voltage of the first channel region being lower than that of the second channel region.

    摘要翻译： 提供了具有非对称沟道结构的非易失性存储器件。 非易失性存储器件包括形成在半导体衬底中并掺杂有n型杂质的半导体衬底，源极区和漏极区，包括隧穿层的俘获结构，其被布置在 半导体衬底和通过其电荷载流子被隧道化;以及电荷俘获层，其形成在隧穿层上并俘获隧穿电荷载流子;形成在俘获结构和暴露的半导体衬底上的栅极绝缘层，栅极 形成在栅极绝缘层上的电极和形成在源极区域和漏极区域之间的沟道区域，并且包括形成在捕获结构的下部的第一沟道区域和形成在栅极绝缘层的下部的第二沟道区域 所述第一沟道区的阈值电压低于所述第二沟道区的阈值电压。