公开(公告)号：US20140285224A1

公开(公告)日：2014-09-25

申请号：US14240265

申请日：2012-08-20

申请人： Joerg Albuschies

发明人： Joerg Albuschies

IPC分类号： G01N27/04 ,  G01N33/483

CPC分类号： G01N27/04 ,  B81B7/0006 ,  B81B2201/0214 ,  B81C1/00087 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  G01N33/483 ,  G01N33/48721

摘要： In a method for producing a sensor element, a silicon nanowire having a diameter less than 50 nm is contacted via at least two points by electrodes. The nanowire and the electrodes are arranged on one plane on a substrate. Catalytically active metal nanoparticles having a diameter in the range of 0.5-50 nm are deposited on the surface of an insulating substrate and the surface and the metal nanoparticles deposited thereon are exposed to a gas flow containing a gaseous silicon component at a temperature in the range of 300-1100° C., whereupon, during a time period in the range of 10-200 minutes, a nanowire of a length in the range of 5-200 μm projecting from the substrate is formed. The nanowire projecting from the surface of the substrate is deposited in one plane with one of the contact surfaces corresponding to the surface of the insulating substrate by applying a secondary substrate, and either the nanowire deposited on the insulating substrate is contacted at two different points by electrodes or the nanowire adhering to the secondary substrate is contacted at two different points by electrodes.

摘要翻译： 在制造传感器元件的方法中，直径小于50nm的硅纳米线通过至少两个点被电极接触。 纳米线和电极布置在基板上的一个平面上。 直径在0.5-50nm范围内的催化活性金属纳米颗粒沉积在绝缘衬底的表面上，并且沉积在其上的表面和金属纳米颗粒在包含气态硅组分的气流中暴露在范围内 为300-1100℃，于是在10-200分钟的时间段内形成从衬底突出的5-200μm范围内的长度的纳米线。 从衬底的表面突出的纳米线通过施加二次衬底而沉积在一个平面中，其中一个接触表面对应于绝缘衬底的表面，并且沉积在绝缘衬底上的纳米线在两个不同点通过 附着于二次基板的电极或纳米线通过电极在两个不同点接触。

公开(公告)号：US09366643B2

公开(公告)日：2016-06-14

申请号：US14240265

申请日：2012-08-20

申请人： Joerg Albuschies

发明人： Joerg Albuschies

IPC分类号： G01N27/04 ,  G01N33/483 ,  B82Y40/00 ,  C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  G01N33/487 ,  B82Y30/00

CPC分类号： G01N27/04 ,  B81B7/0006 ,  B81B2201/0214 ,  B81C1/00087 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  G01N33/483 ,  G01N33/48721

摘要： In a method for producing a sensor element, a silicon nanowire having a diameter less than 50 nm is contacted via at least two points by electrodes. The nanowire and the electrodes are arranged on one plane on a substrate. Catalytically active metal nanoparticles having a diameter in the range of 0.5-50 nm are deposited on the surface of an insulating substrate and the surface and the metal nanoparticles deposited thereon are exposed to a gas flow containing a gaseous silicon component at a temperature in the range of 300-1100° C., whereupon, during a time period in the range of 10-200 minutes, a nanowire of a length in the range of 5-200 μm projecting from the substrate is formed. The nanowire projecting from the surface of the substrate is deposited in one plane with one of the contact surfaces corresponding to the surface of the insulating substrate by applying a secondary substrate, and either the nanowire deposited on the insulating substrate is contacted at two different points by electrodes or the nanowire adhering to the secondary substrate is contacted at two different points by electrodes.

摘要翻译： 在制造传感器元件的方法中，直径小于50nm的硅纳米线通过至少两个点被电极接触。 纳米线和电极布置在基板上的一个平面上。 直径在0.5-50nm范围内的催化活性金属纳米颗粒沉积在绝缘衬底的表面上，并且沉积在其上的表面和金属纳米颗粒在包含气态硅组分的气流中暴露在范围内 为300-1100℃，于是在10-200分钟的时间段内形成从衬底突出的5-200μm范围内的长度的纳米线。 从衬底的表面突出的纳米线通过施加二次衬底而沉积在一个平面中，其中一个接触表面对应于绝缘衬底的表面，并且沉积在绝缘衬底上的纳米线在两个不同点通过 附着于二次基板的电极或纳米线通过电极在两个不同点接触。