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公开(公告)号：US07957437B2
公开(公告)日：2011-06-07
申请号：US12456720
申请日：2009-06-22
IPC分类号： H01S3/10
CPC分类号： H01S5/06256 , H01S5/06226 , H01S5/06251 , H01S5/125
摘要： Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.
摘要翻译： 公开了一种半导体激光器，其中基板在光波传播方向上包括至少三个独立的功能部分，所述功能部分用于不同的功能，并且通过电极通过电极引线单独触发。 功能部分提供强化区域，网格区域和相位调整区域。 在相位调整区域中，在强化区域中光波被光学增强，同时在相位调整区域调整前进和返回波形的相位。 网格区域用于选择波长并调整强化区域和相位调整区域之间的耦合强度。
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公开(公告)号：US07570681B2
公开(公告)日：2009-08-04
申请号：US10554571
申请日：2004-04-29
IPC分类号： H01S5/00
CPC分类号： H01S5/06256 , H01S5/06226 , H01S5/06251 , H01S5/125
摘要： Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving different functions and being individually triggered by means of electrodes (15, 18, 21) via electrode leads (16, 19, 22). An intensification zone (17), a grid zone (20), and a phase adjustment zone (23) are provided as functional sections. The light wave is optically intensified in the intensification zone (17) while the phase of the advancing and returning wave is adjusted in the phase adjustment zone (23). The grid zone (20) is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone (17) and the phase adjustment zone (23).
摘要翻译： 公开了一种半导体激光器（10），其中基板（11）在光波传播方向（A）的方向上包括至少三个独立的功能部分（17,20,23），所述功能部分（17,20,23） 通过电极引线（16,19,22）通过电极（15,18,21）独立地触发不同的功能。 作为功能部分提供增强区域（17），格栅区域（20）和相位调整区域（23）。 在相位调整区域（23）调整前进和返回波形的相位，增强区域（17）中的光波被光学增强。 网格区域（20）用于选择波长并调节强化区域（17）和相位调整区域（23）之间的耦合强度。
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公开(公告)号：US20090268764A1
公开(公告)日：2009-10-29
申请号：US12456720
申请日：2009-06-22
CPC分类号： H01S5/06256 , H01S5/06226 , H01S5/06251 , H01S5/125
摘要： Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.
摘要翻译： 公开了一种半导体激光器，其中基板在光波传播方向上包括至少三个独立的功能部分，所述功能部分用于不同的功能，并且通过电极通过电极引线单独触发。 功能部分提供强化区域，网格区域和相位调整区域。 在相位调整区域中，在强化区域中光波被光学增强，同时在相位调整区域调整前进和返回波形的相位。 网格区域用于选择波长并调整强化区域和相位调整区域之间的耦合强度。
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公开(公告)号：US07061962B2
公开(公告)日：2006-06-13
申请号：US10212463
申请日：2002-08-05
申请人： Johann Peter Reithmaier , Lars Bach
发明人： Johann Peter Reithmaier , Lars Bach
CPC分类号： H01S5/12 , H01S5/06256 , H01S5/1203 , H01S5/1228 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/22
摘要： A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
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公开(公告)号：US07776634B2
公开(公告)日：2010-08-17
申请号：US12290932
申请日：2008-11-05
申请人： Johann Peter Reithmaier , Lars Bach
发明人： Johann Peter Reithmaier , Lars Bach
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , H01S5/06256 , H01S5/1203 , H01S5/1228 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/22
摘要： A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
摘要翻译： 公开了具有半导体衬底的半导体激光器，布置在半导体衬底上的激光层，平行于激光层布置的波导和带状光栅结构。 激光层，波导和光栅被布置成导致激光和光栅结构之间的弱耦合的结构，使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。
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公开(公告)号：US20090117678A1
公开(公告)日：2009-05-07
申请号：US12290932
申请日：2008-11-05
申请人： Johann Peter Reithmaier , Lars Bach
发明人： Johann Peter Reithmaier , Lars Bach
CPC分类号： H01S5/12 , H01S5/06256 , H01S5/1203 , H01S5/1228 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/22
摘要： A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
摘要翻译： 公开了具有半导体衬底的半导体激光器，布置在半导体衬底上的激光层，平行于激光层布置的波导和带状光栅结构。 激光层，波导和光栅被布置成导致激光和光栅结构之间的弱耦合的结构，使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。
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公开(公告)号：US07494836B2
公开(公告)日：2009-02-24
申请号：US11393611
申请日：2006-03-30
申请人： Johann Peter Reithmaier , Lars Bach
发明人： Johann Peter Reithmaier , Lars Bach
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , H01S5/06256 , H01S5/1203 , H01S5/1228 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/22
摘要： A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
摘要翻译： 公开了具有半导体衬底的半导体激光器，布置在半导体衬底上的激光层，平行于激光层布置的波导和带状光栅结构。 激光层，波导和光栅布置成导致激光和光栅结构之间的弱耦合的结构，使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。
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