公开(公告)号：US5747389A

公开(公告)日：1998-05-05

申请号：US890287

申请日：1992-05-26

申请人： John K. Chu

发明人： John K. Chu

IPC分类号： H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02129 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31604 ,  H01L21/31625 ,  H01L21/469 ,  Y10S438/958

摘要： A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivation deposition may need to be kept to a temperature low enough so that the boron compound used for the boron source does not decompose prior to reacting with other reactants.

摘要翻译： 公开了一种制造器件和器件本身的方法，其利用显示改进的抗裂性的钝化层。 这通过将硼掺入PSG钝化层来实现。 钝化沉积的温度可能需要保持在足够低的温度，以便用于硼源的硼化合物在与其它反应物反应之前不会分解。

公开(公告)号：US4775550A

公开(公告)日：1988-10-04

申请号：US870234

申请日：1986-06-03

申请人： John K. Chu ,  Sanjiv K. Mittal ,  John T. Orton ,  Jagir S. Multani ,  Robert Jecmen

发明人： John K. Chu ,  Sanjiv K. Mittal ,  John T. Orton ,  Jagir S. Multani ,  Robert Jecmen

IPC分类号： H01L21/3205 ,  H01L21/768 ,  B05D3/06 ,  B05D5/12

CPC分类号： H01L21/76819

摘要： A planarization process for a double metal very large scale integration (VLSI) technology is disclosed. To compensate for an irregular surface topology encountered in a dielectric medium between the two metals, a CVD dielectric layer and a glass layer are first deposited above the first metal. Then an etch-back process is used to uniformly etch back the CVD dielectric and the glass layers at the same rate, leaving a planarized surface for subsequent deposition of a second dielectric layer and a second metal layer.

摘要翻译： 公开了一种用于双金属超大规模集成（VLSI）技术的平面化工艺。 为了补偿在两种金属之间的介电介质中遇到的不规则表面拓扑，首先在第一金属之上沉积CVD电介质层和玻璃层。 然后使用回蚀刻工艺以相同的速率均匀地回蚀CVD电介质和玻璃层，留下平坦的表面，用于随后沉积第二介电层和第二金属层。

公开(公告)号：US5936301A

公开(公告)日：1999-08-10

申请号：US989234

申请日：1997-12-12

申请人： John K. Chu

发明人： John K. Chu

IPC分类号： H01L21/316 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/02129 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31604 ,  H01L21/31625 ,  H01L21/469 ,  Y10S438/958

摘要： A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivation deposition may need to be kept to a temperature low enough so that the boron compound used for the boron source does not decompose prior to reacting with other reactacts.

摘要翻译： 公开了一种制造器件和器件本身的方法，其利用显示改进的抗裂性的钝化层。 这通过将硼掺入PSG钝化层来实现。 钝化沉积的温度可能需要保持在足够低的温度，以便用于硼源的硼化合物在与其它反应物反应之前不会分解。