公开(公告)号：US06958092B2

公开(公告)日：2005-10-25

申请号：US10400594

申请日：2003-03-25

申请人： Gregory M. Wilson ,  Jon A. Rossi ,  Charles C. Yang

发明人： Gregory M. Wilson ,  Jon A. Rossi ,  Charles C. Yang

IPC分类号： H01L21/205 ,  C30B25/10 ,  C30B33/00 ,  H01L21/322 ,  C30B15/02

CPC分类号： C30B29/06 ,  C30B25/10 ,  C30B33/00 ,  H01L21/3225 ,  Y10S257/913 ,  Y10T428/249961 ,  Y10T428/249978

摘要： A wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer. In addition, the front surface of the wafer has an epitaxial layer, having a thickness of less than about 2.0 çm, deposited thereon. A process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface and depositing an epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175C. while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant, and the wafer is cooled at a rate of at least about 10C./sec.

摘要翻译： 晶片的特征在于晶片具有不均匀的晶格空位分布，其中体层中晶格空位的浓度大于前表面层中晶格空位的浓度。 此外，晶片的前表面具有沉积在其上的厚度小于约2.0μm的外延层。 一种方法包括加热晶片起始材料的表面以从表面除去氧化硅层并在表面上沉积外延层以形成外延晶片。 然后将外延晶片加热至至少约1175℃的保温温度。 同时将外延层暴露于包含氧化剂的氧化气氛中，并且晶片以至少约10℃/秒的速率被冷却。

公开(公告)号：US5792273A

公开(公告)日：1998-08-11

申请号：US863960

申请日：1997-05-27

申请人： Michael J. Ries ,  Lance G. Hellwig ,  Jon A. Rossi

发明人： Michael J. Ries ,  Lance G. Hellwig ,  Jon A. Rossi

IPC分类号： C23C16/48 ,  C30B25/10 ,  H01L21/205 ,  C23C16/00

CPC分类号： C30B25/105 ,  C23C16/481

摘要： A horizontal reactor for depositing an epitaxial layer on a semiconductor wafer. The reactor includes a reaction chamber sized and shaped for receiving the semiconductor wafer and a susceptor having an outer edge and a generally planar wafer receiving surface positioned in the reaction chamber for supporting the semiconductor wafer. In addition, the reactor includes a heating array positioned outside the reaction chamber including a plurality of heat lamps and a primary reflector for directing thermal radiation emitted by the heat lamps toward the susceptor to heat the semiconductor wafer and susceptor. Further, the reactor includes a secondary edge reflector having a specular surface positioned beside the heating array for recovering misdirected thermal radiation directed generally to a side of the heating array and away from the susceptor. The secondary edge reflector is shaped and arranged with respect to the heating array and the susceptor for re-directing the misdirected thermal radiation to the outer edge of the susceptor. Thus, the secondary edge reflector heats the edge and reduces thermal gradients across the susceptor and the semiconductor wafer to inhibit slip dislocations in the wafer during epitaxial layer deposition.

摘要翻译： 一种用于在半导体晶片上沉积外延层的水平反应器。 反应器包括尺寸和形状适于接收半导体晶片的反应室和具有位于反应室中用于支撑半导体晶片的外边缘和大致平面的晶片接收表面的基座。 此外，反应器包括位于反应室外部的加热阵列，其包括多个加热灯和用于将由热灯发射的热辐射朝向基座引导以加热半导体晶片和基座的主反射器。 此外，反应器包括次级边缘反射器，其具有位于加热阵列旁边的镜面，用于回收通常指向加热阵列的一侧并远离基座的误导热辐射。 第二边缘反射器相对于加热阵列和基座被成形和布置，用于将错误定向的热辐射重新引导到基座的外边缘。 因此，次边缘反射器加热边缘并降低基座和半导体晶片两端的热梯度，以抑制外延层沉积期间晶片中的滑移位错。

公开(公告)号：US06537655B2

公开(公告)日：2003-03-25

申请号：US09859094

申请日：2001-05-16

申请人： Gregory M. Wilson ,  Jon A. Rossi ,  Charles C. Yang

发明人： Gregory M. Wilson ,  Jon A. Rossi ,  Charles C. Yang

IPC分类号： C30B2906

CPC分类号： C30B29/06 ,  C30B25/10 ,  C30B33/00 ,  H01L21/3225 ,  Y10S257/913 ,  Y10T428/249961 ,  Y10T428/249978

摘要： This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer. This wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein (a) the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer, (b) the crystal lattice vacancies have a concentration profile in which the peak density of the crystal lattice vacancies is at or near the central plane, and (c) the concentration of crystal lattice vacancies generally decreases from the position of peak density toward the front surface of the wafer. In addition, the front surface of the wafer has an epitaxial layer deposited thereon. This epitaxial layer has a thickness of from about 0.1 to about 2.0 &mgr;m.

摘要翻译： 本发明涉及一种新颖的单晶硅晶片。 在一个实施例中，该晶片包括：（a）两个主要大致平行的表面（即，前表面和后表面）; （b）在前表面和后表面之间并平行的中心平面; （c）前表面层，其包括从前表面朝向中心平面延伸至少约10微米的距离的晶片的区域; 和（d）包括晶片从中心平面延伸到前表面层的区域的体层。 该晶片的特征在于晶片具有不均匀的晶格空位分布，其中（a）本体层中晶格空位的浓度大于前表面层中晶格空位的浓度，（b ）晶格空位具有其中晶格空位的峰值密度在中心平面处或附近的浓度分布，并且（c）晶格空位的浓度通常从峰密度的位置朝向前表面的位置减小 晶圆。 此外，晶片的前表面具有沉积在其上的外延层。 该外延层具有约0.1至约2.0μm的厚度。

公开(公告)号：US06284384B1

公开(公告)日：2001-09-04

申请号：US09250908

申请日：1999-02-16

申请人： Gregory M. Wilson ,  Jon A. Rossi ,  Charles C. Yang

发明人： Gregory M. Wilson ,  Jon A. Rossi ,  Charles C. Yang

IPC分类号： B32B1504

CPC分类号： C30B29/06 ,  C30B25/10 ,  C30B33/00 ,  H01L21/3225 ,  Y10S257/913 ,  Y10T428/249961 ,  Y10T428/249978

摘要： This invention is directed to a novel a single crystal silicon wafer. The wafer comprises: (a) two major generally parallel surfaces (ie., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer. This wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein (a) the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer, (b) the crystal lattice vacancies have a concentration profile in which the peak density of the crystal lattice vacancies is at or near the central plane, and (c) the concentration of crystal lattice vacancies generally decreases from the position of peak density toward the front surface of the wafer. In addition, the front surface of the wafer has an epitaxial layer deposited thereon. The epitaxial layer has an average light scattering event concentration of no greater than about 0.06/cm2 as measured by a laser-based auto inspection tool configured to detect light scattering events corresponding to polystyrene spheres having diameters of no less than about 0.12 &mgr;m. The bulk layer comprises voids which are at least about 0.01 &mgr;m in their largest dimension.

摘要翻译： 本发明涉及一种新颖的单晶硅晶片。 晶片包括：（a）两个主要的大致平行的表面（即，前表面和后表面）; （b）在前表面和后表面之间并平行的中心平面; （c）前表面层，其包括从前表面朝向中心平面延伸至少约10微米的距离的晶片的区域; 和（d）包括晶片从中心平面延伸到前表面层的区域的体层。 该晶片的特征在于晶片具有不均匀的晶格空位分布，其中（a）本体层中晶格空位的浓度大于前表面层中晶格空位的浓度，（b ）晶格空位具有其中晶格空位的峰值密度在中心平面处或附近的浓度分布，并且（c）晶格空位的浓度通常从峰密度的位置朝向前表面的位置减小 晶圆。 此外，晶片的前表面具有沉积在其上的外延层。 通过基于激光的自动检查工具测量的平均光散射事件浓度不大于约0.06 / cm 2，其被配置为检测对应于具有不小于约0.12μm的直径的聚苯乙烯球的光散射事件。 本体层包括其最大尺寸为至少约0.01μm的空隙。

公开(公告)号：US4622082A

公开(公告)日：1986-11-11

申请号：US607996

申请日：1984-06-25

申请人： William Dyson ,  Jon A. Rossi

发明人： William Dyson ,  Jon A. Rossi

IPC分类号： H01L21/322 ,  H01L21/324

CPC分类号： H01L21/3225 ,  Y10S148/06

摘要： N+ type semiconductor substrates containing oxygen are thermally treated to enhance internal gettering capabilities by heating at 1050.degree. to 1200.degree. C., then at 500.degree. to 900.degree. C. and finally at 950.degree. to 1250.degree. C.

摘要翻译： 对含有氧的N +型半导体衬底进行热处理，通过在1050℃〜1200℃，然后在500℃〜900℃，最后在950〜1250℃下加热来提高内部吸气能力。