Abstract:
A wafer drying method includes submerging a wafer in a cleaning solution in a dry chamber. An organic liquid vapor from an organic liquid is supplied into the dry chamber at a first volumetric supply rate to form an organic liquid layer on a surface of the cleaning solution, the organic liquid layer having at least a prescribed concentration of the organic liquid. The organic liquid vapor is supplied into the dry chamber at a second volumetric supply rate that is lower than the first volumetric supply rate. During and/or following the supplying of the organic liquid vapor into the dry chamber, at least a portion of the wafer is removed from the cleaning solution through the organic liquid layer.
Abstract:
This invention relates to a conditioner for a chemical mechanical planarization pad, which is necessary for global planarization of a wafer in order to increase the degree of integration of a semiconductor device, and more particularly to a pad conditioner having a structure able to reduce friction with a pad so as to solve the problems caused by a lot of friction being generated upon conditioning, and to a method of manufacturing the same.
Abstract:
A polarization switching device includes a lower panel; an upper panel facing the lower panel; a liquid crystal layer disposed between the lower panel and the upper panel; and a driver to apply a first driving voltage and a second driving voltage to the lower panel and the upper panel, respectively, the first driving voltage to transition among a center voltage, a first voltage and a second voltage. The first voltage and the second voltage have the same difference in value from the center voltage. The driver includes a voltage changing unit to generate the first voltage and the second voltage based on a digital data input to a first digital-analog converter.
Abstract:
A liquid crystal display includes a plurality of pixels arranged in a matrix, each pixel having a first sub-pixel electrode and a second sub-pixel electrode. A first thin film transistor is connected to the first sub-pixel electrode. A second thin film transistor is connected to the second sub-pixel electrode. A third thin film transistor is connected to the second sub-pixel electrode. A fourth thin film transistor is connected to a drain electrode of the third thin film transistor. A first gate line is connected to the first thin film transistor and the second thin film transistor. A data line is connected to the first thin film transistor and the second thin film transistor. A second gate line is connected to the third thin film transistor. A third gate line is connected to the fourth thin film transistor.
Abstract:
A gate-off voltage generator provides a gate-off voltage to a gate line of a display panel. The gate-off voltage generator includes a transistor having a base terminal, a collector terminal, and an emitter terminal, the emitter terminal configured to output the gate-off voltage to the gate line. A controller is connected to the base terminal. A feedback circuit is connected between the gate line and the controller, the feedback circuit configured to provide to the controller a feedback voltage based upon the gate-off voltage outputted from the emitter terminal. The gate-off voltage from the emitter terminal is compared with a desired gate-off voltage in the controller and the voltage at the base terminal is controlled by the controller to provide the desired gate-off voltage to gate line.
Abstract:
A power source circuit of a display apparatus includes a voltage divider, an operational amplifier, a first switch, a second switch, and a protector. The voltage divider generates a divided voltage between a first driving voltage and a ground voltage. The operational amplifier receives the divided voltage and outputs the divided voltage as a second driving voltage. The first switch is connected between a first supply voltage terminal to receive the first driving voltage and a common node. The second switch is connected between the common node and a second supply voltage terminal to receive the ground voltage. The protector is connected to the common node to limit a voltage output of the first supply voltage terminal in response to a voltage of the common node.
Abstract:
A polarization switching device includes a lower panel; an upper panel facing the lower panel; a liquid crystal layer disposed between the lower panel and the upper panel; and a driver to apply a first driving voltage and a second driving voltage to the lower panel and the upper panel, respectively, the first driving voltage to transition among a center voltage, a first voltage and a second voltage. The first voltage and the second voltage have the same difference in value from the center voltage. The driver includes a voltage changing unit to generate the first voltage and the second voltage based on a digital data input to a first digital-analog converter.
Abstract:
A method of driving a light source includes; converting an externally supplied direct current voltage into a first alternating current voltage, boosting the first alternating current voltage to a second alternating current voltage having a higher voltage than the first alternating current voltage, turning on the light source using the second alternating current voltage, detecting an arc noise detection voltage by adding arc noise generated from a high voltage terminal of the light source and arc noise generated from a low voltage terminal of the light source, and blocking the high voltage from being provided to the light source based on the detected arc noise detection voltage.
Abstract:
A wafer guide and a semiconductor wafer drying apparatus using the same are disclosed. The wafer guide includes a body and supporters formed on the body. The supporters present a plurality of grooves to engage and support a periphery of a wafer. A discharge structure, e.g., a discharging hole, promotes flow of a cleaning solution away from the grooves thereby more effectively drying the wafer by more readily discharging the cleaning solution by way of the discharging structure. The discharging structure reduces undesirable accumulation of the cleaning solution, such as deionized water, in the grooves during a wafer cleaning process. In some embodiments, a pump actively draws fluid away from the discharge structure.
Abstract:
A vacuum dryer and a method of drying a semiconductor device using the same are provided. In the present invention, a vacuum dryer using isopropyl alcohol vapor, including an outer bath, an inner bath, a main water supply line, a supplementary water supply line, an inner bath drain line, and an outer bath drain line, is provided. After cleaning the inside of the vacuum dryer, the inner bath is filled with the supplied deionized water and the deionized water is continuously overflowed. Then, the semiconductor substrate is loaded into the inner bath of the vacuum dryer to which the deionized is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.