摘要:
A method of designing a phase grating pattern and a method of manufacturing a photo mask using the design method are aimed at enhancing the resolution of a photolithographic process. A modified form of illumination, which will irradiate a main mask pattern to be transcribed onto a wafer using the photolithographic process and thereby enhance the transcription process, is selected. An area over which patterns for providing the modified form of illumination is divided into a plurality of subcells. Phase values are arbitrarily assigned and a phase values to the subcells. One of the subcells is randomly selected, and a phase value is assigned to the randomly selected subcell. These steps are repeated producing new arrangements of the phase values assigned to the subcells. The arrangements of the phase values are evaluated to determine whether any of them correspond to the selected modified illumination. When such a correspondence is realized, a phase grating pattern made according to the arrangement of phase values is produced as part of an auxiliary mask or as part of the main mask.
摘要:
A method of designing a phase grating pattern provides a modified form of illumination for a main mask, optimum for producing one or more target patterns on a wafer in a photolithographic process. Once the target pattern(s) to be formed on the wafer are decided, an area to be occupied by at least a portion of the phase grating is divided into a plurality of subcells, initial phase values are assigned to each of the subcells, and one of the subcells is randomly selected and the phase value last assigned thereto is changed, and the process is repeated. The process is in an iteration that changes the arrangement of the phase values assigned to the subcells until they converge on one which will provide the design for a phase grating which will produce a modified form of illumination optimum for use in forming the target pattern(s) on the wafer.
摘要:
A unidirectionally operating laser apparatus using a semi-monolithic ring cavity having a compact structure capable of achieving a high frequency stability and a high-speed laser frequency tuning and modulation. The laser apparatus includes a laser active medium having a curved surface exhibiting an anti-reflection characteristic for a pump laser beam from a pump laser incident thereon while exhibiting a high reflection characteristic for an oscillating laser beam, a planar surface exhibiting an anti-reflection characteristic for the oscillating laser beam, and an optically-active polarization rotator attached to one side portion of the planar surface. The laser apparatus also includes an output mirror separated from the laser active medium, the output mirror having a curved surface with a coating exhibiting a higher reflectance coefficient for S-polarized beams than that for P-polarized beams, and a piezo-electric transducer. The laser apparatus is applicable to a variety of scientific fields using continuous-wave wavelength-tunable lasers.
摘要:
A vacuum box having features ideal for utilization with an overlock sewing machine housed in a flat-bed table in a garment factory setting. The vacuum flat-bed table of an overlock sewing machine. The vacuum box is a receptacle having bottom, top, left, right, front, and rear walls. A portion of the front wall can have an opening covered by a hingably mounted door panel. The receptacle has a first compartment and a second compartment. The first compartment is sealed-off from the first compartment and has a electric outlet placed therein placed along the left or right wall. A suction fan is located in the second compartment. A horizontally sliding top panel is placed above the top surface of the top wall. The top panel is pivotally connected to guide slots placed along the front and back wall of the receptacle in a manner which allows the top panel to be extended horizontally to increase the top surface and drawn in to reduce the top surface. The vacuum box of the present invention uses dual flexible vacuum hoses for maximal suction effect. A first vacuum hose and a second vacuum hose each connects at its first end to the receptacle and extends into the second compartment. Each vacuum hose connects at a second end to predetermined point on the sewing machine.
摘要:
A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences.