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1.发明授权Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film 有权使用原子层沉积形成高电介质膜的方法和制造具有高电介质膜的电容器的方法公开(公告)号：US07396719B2
公开(公告)日：2008-07-08
申请号：US10873256
申请日：2004-06-23
申请人： Kyoung-seok Kim , Hong-bae Park , Bong-hyun Kim , Sung-tae Kim , Jong-wan Kwon , Jung-hyun Lee , Ki-chul Kim , Jae-soon Lim , Gab-jin Nam , Young-sun Kim
发明人： Kyoung-seok Kim , Hong-bae Park , Bong-hyun Kim , Sung-tae Kim , Jong-wan Kwon , Jung-hyun Lee , Ki-chul Kim , Jae-soon Lim , Gab-jin Nam , Young-sun Kim
IPC分类号： H01L21/471
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/45531 , C23C16/56 , H01L21/02175 , H01L21/02181 , H01L21/02205 , H01L21/3141 , H01L21/3142 , H01L21/3143 , H01L21/31645
摘要： A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.
摘要翻译： 使用原子层沉积（ALD）形成高电介质膜的方法以及制造具有高电介质膜的电容器的方法包括将含有金属元素的前体供应到半导体衬底并清洗反应器; 供应氧化剂并清洗反应器; 并供应含氮的反应源并清洗反应器。
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2.发明授权Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device 有权使用原子层沉积工艺形成多层结构的方法以及形成集成电路器件的电容器的方法公开(公告)号：US07135422B2
公开(公告)日：2006-11-14
申请号：US10884507
申请日：2004-07-02
申请人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
发明人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/405 , C23C16/45529 , H01L21/02175 , H01L21/022 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31645 , H01L28/40 , H01L28/90
摘要： Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
摘要翻译： 使用原子层沉积工艺形成的多层结构包括多个金属氧化物层，其中形成金属氧化物层而不存在层间氧化物层，并且可以包括不同的金属氧化物组合物。
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3.发明申请METHOD OF FORMING HIGH DIELECTRIC FILM USING ATOMIC LAYER DEPOSITION AND METHOD OF MANUFACTURING CAPACITOR HAVING THE HIGH DIELECTRIC FILM 审中-公开使用原子层沉积法形成高介电膜的方法和制造具有高介电膜的电容器的方法公开(公告)号：US20080268653A1
公开(公告)日：2008-10-30
申请号：US12133683
申请日：2008-06-05
申请人： Kyoung-seok KIM , Hong-bae PARK , Bong-hyun KIM , Sung-tae KIM , Jong-wan KWON , Jung-hyun LEE , Ki-chul KIM , Jae-soon LIM , Gab-jin NAM , Young-sun KIM
发明人： Kyoung-seok KIM , Hong-bae PARK , Bong-hyun KIM , Sung-tae KIM , Jong-wan KWON , Jung-hyun LEE , Ki-chul KIM , Jae-soon LIM , Gab-jin NAM , Young-sun KIM
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/45531 , C23C16/56 , H01L21/02175 , H01L21/02181 , H01L21/02205 , H01L21/3141 , H01L21/3142 , H01L21/3143 , H01L21/31645
摘要： A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.
摘要翻译： 使用原子层沉积（ALD）形成高电介质膜的方法以及制造具有高电介质膜的电容器的方法包括将含有金属元素的前体供应到半导体衬底并清洗反应器; 供应氧化剂并清洗反应器; 并供应含氮的反应源并清洗反应器。
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4.发明申请Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device 有权使用原子层沉积工艺形成多层结构的方法以及形成集成电路器件的电容器的方法公开(公告)号：US20050009369A1
公开(公告)日：2005-01-13
申请号：US10884507
申请日：2004-07-02
申请人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
发明人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
IPC分类号： H01L27/108 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/31 , H01L21/469 , H01L21/8242 , H01L21/20
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/405 , C23C16/45529 , H01L21/02175 , H01L21/022 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31645 , H01L28/40 , H01L28/90
摘要： Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
摘要翻译： 使用原子层沉积工艺形成的多层结构包括多个金属氧化物层，其中形成金属氧化物层而不存在层间氧化物层，并且可以包括不同的金属氧化物组合物。
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