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公开(公告)号：US20130168720A1
公开(公告)日：2013-07-04
申请号：US13807594
申请日：2011-06-29
IPC分类号： H01L33/50
摘要： An optoelectronic component includes at least one radiation-emitting semiconductor element. At least one converter element is used to convert the electromagnetic radiation emitted by the semiconductor element. At least one filter element, which includes filter particles or is formed by the same, scatters and/or absorbs at least one pre-definable wavelength range of the electromagnetic radiation emitted by the semiconductor element more strongly than a wavelength range that is different from the predefined wavelength range. The filter particles have a d50 value, measured in Q0, of at least 0.5 nm to no more than 500 nm and/or the filter particles are designed at least in some areas in a thread-like manner and in a thread-like region have a diameter that is at least 0.5 nm and no more than 500 nm.
摘要翻译： 光电子部件包括至少一个辐射发射半导体元件。 使用至少一个转换器元件来转换由半导体元件发射的电磁辐射。 包括过滤器颗粒或由其形成的至少一个过滤器元件比不同于以下的波长范围更强烈地散射和/或吸收由半导体元件发射的电磁辐射的至少一个预定义波长范围 预定波长范围。 过滤器颗粒具有在Q0中测量的至少0.5nm至不大于500nm的d50值和/或至少在某些区域以线状方式设计过滤颗粒，并且在螺纹状区域中 直径为至少0.5nm且不大于500nm。
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公开(公告)号：US08866175B2
公开(公告)日：2014-10-21
申请号：US13821554
申请日：2011-08-22
申请人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
发明人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
CPC分类号： H01L33/62 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 镜层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。
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公开(公告)号：US20130228819A1
公开(公告)日：2013-09-05
申请号：US13821554
申请日：2011-08-22
申请人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
发明人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。
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