利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

478 条记录 (耗时 0.027 秒)

    Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme
    5.
    发明授权
    Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme 有权

    公开(公告)号：US11444239B1

    公开(公告)日：2022-09-13

    申请号：US17187864

    申请日：2021-02-28

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： G11C11/00 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

    摘要： A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction. Further, there is provided a toggle writing method of the perpendicular magnetoresistive element comprises: applying a first write pulse having a first voltage magnitude and a first pulse width to reverse the adjacent-bias layer magnetization direction to be anti-parallel to the free layer magnetization direction by spin-transfer-torque effect, and applying a second write pulse having a second voltage magnitude and a second pulse width to reverse the free layer magnetization direction to be parallel to the adjacent-bias layer magnetization direction by voltage-controlled magnetic anisotropy effect under the magnetic dipole bias field from the adjacent-bias layer.

    MAGNETORESISTIVE ELEMENT HAVING A COMPOSITE RECORDING STRUCTURE
    6.
    发明申请
    MAGNETORESISTIVE ELEMENT HAVING A COMPOSITE RECORDING STRUCTURE 有权

    公开(公告)号：US20220238799A1

    公开(公告)日：2022-07-28

    申请号：US17160349

    申请日：2021-01-27

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/02

    摘要： A method of forming a bottom-pinned magnetoresistive element comprising a composite recording structure that includes a first magnetic free layer and a second magnetic free layer containing Ni atoms, separated by an oxide spacing layer. The first magnetic free layer is Ni-free and the first magnetic free layer and the second magnetic free layer are magnetically parallel-coupled. A magnetic STT-enhancing structure is further provided atop the cap layer, wherein the magnetic STT-enhancing structure comprises a first magnetic material layer atop the cap layer and having a perpendicular magnetic anisotropy and an invariable magnetization anti-parallel to the magnetization direction of the reference layer, a second anti-ferromagnetic coupling (AFC) layer atop the first magnetic material layer, and a second magnetic material layer atop the second AFC layer.

    Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning
    7.
    发明授权
    Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning 有权

    公开(公告)号：US11316102B2

    公开(公告)日：2022-04-26

    申请号：US16865810

    申请日：2020-05-04

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： H01L43/10 ,  H01L43/08 ,  H01F10/12 ,  H01F10/32 ,  H01F10/30

    摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

    Multivalent pharmacophores for high avidity and overexpressed-target specific binding and uses thereof
    8.
    发明申请
    Multivalent pharmacophores for high avidity and overexpressed-target specific binding and uses thereof 有权

    公开(公告)号：US20210230248A1

    公开(公告)日：2021-07-29

    申请号：US16752644

    申请日：2020-01-25

    申请人： Jun Chen

    发明人： Jun Chen

    IPC分类号： C07K14/705

    摘要： Overexpression of a variety of cell surface markers in cancer cells and/or non-cancer cells in the tumor microenvironment is an important hallmark for many types of cancers and is associated with cancer progression and poor prognosis. This invention provides multivalent pharmacophores for high avidity and specific binding to these overexpressed markers with much reduced binding to normally-expressed targets in healthy tissues. Further, the pharmacophores will not be interfered by soluble targets present in the circulatory systems and in tumor microenvironment. This new class of targeting therapeutics and diagnostics will provide better efficacy in cancer treatment and higher accuracy in cancer diagnosis than the currently available therapeutic and diagnostic means. This invention will also expand the range of targets that can be targeted in both cancer treatment and diagnosis, and more types of cancers can be treated target-specifically. Other diseases that have overexpressed cell surface markers in diseased cells will also be benefitted from this invention.

    GLASS-FREE 3D DISPLAY SYSTEM USING DUAL IMAGE PROJECTION AND TRI-COLORS GRATING MULTIPLEXING PANELS
    9.
    发明申请
    GLASS-FREE 3D DISPLAY SYSTEM USING DUAL IMAGE PROJECTION AND TRI-COLORS GRATING MULTIPLEXING PANELS 有权

    公开(公告)号：US20210088894A1

    公开(公告)日：2021-03-25

    申请号：US17117020

    申请日：2020-12-09

    申请人： Duan-Jun Chen ,  Jason Chen

    发明人： Duan-Jun Chen ,  Jason Chen

    IPC分类号： G03B35/22 ,  G02B30/26 ,  G03B21/60

    摘要： The problem of 3D panel display systems either (a) requiring special glasses to separate left and right viewing images, or (b) having auto-stereoscopic 3D with compromised fidelity, is solved by providing a projection three dimensional (3D) display system for providing glass-free, 3D display to a plurality of viewing volumetric pairs (VVAs) in space corresponding to a hypothetical plurality of viewers' eye aperture pairs, the projection 3D display system comprising: (a) a dual-image projector configured to project both a left viewing tri-color image and a right viewing tri-color image; and (b) means for (1) receiving a tri-color mixed input beam encompassing the left and right viewing tri-color images, (2) multiplying the tri-color mixed input beam into a plurality of tri-color mixed output beams, and (3) focusing the plurality of tri-color mixed beams for viewing at the VVAs.