公开(公告)号：US10056543B2

公开(公告)日：2018-08-21

申请号：US15146355

申请日：2016-05-04

申请人： Jung-Hoon Bak ,  Myoung-Su Son ,  Jae-Chul Shim ,  Gwan-Hyeob Koh ,  Yoon-Jong Song

发明人： Jung-Hoon Bak ,  Myoung-Su Son ,  Jae-Chul Shim ,  Gwan-Hyeob Koh ,  Yoon-Jong Song

IPC分类号： H01L21/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.

公开(公告)号：US20170110509A1

公开(公告)日：2017-04-20

申请号：US15293771

申请日：2016-10-14

申请人： Jung-Hoon BAK ,  Woo-Jin KIM ,  Mina LEE ,  Gwan-Hyeob KOH ,  Yoon-Jong SONG

发明人： Jung-Hoon BAK ,  Woo-Jin KIM ,  Mina LEE ,  Gwan-Hyeob KOH ,  Yoon-Jong SONG

IPC分类号： H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic tunnel junction (MTJ) structure includes a fixed layer pattern structure having a perpendicular magnetization direction, a tunnel barrier pattern on the fixed layer pattern structure, a free layer pattern on the tunnel barrier pattern, the free layer pattern having a perpendicular magnetization direction, a first surface magnetism induction pattern on the free layer pattern, the first surface magnetism induction pattern inducing a perpendicular magnetism in a surface of the free layer pattern, a conductive pattern on the first surface magnetism induction pattern, and a ferromagnetic pattern on the conductive pattern.

公开(公告)号：US20170054070A1

公开(公告)日：2017-02-23

申请号：US15146355

申请日：2016-05-04

申请人： Jung-Hoon Bak ,  Myoung-Su Son ,  Jae-Chul Shim ,  Gwan-Hyeob Koh ,  Yoon-Jong Song

发明人： Jung-Hoon Bak ,  Myoung-Su Son ,  Jae-Chul Shim ,  Gwan-Hyeob Koh ,  Yoon-Jong Song

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.

摘要翻译： 在制造MRAM器件的方法中，在衬底上形成包括下电极，MTJ结构和顺序层叠的上电极的存储单元。 在衬底上形成包括依次堆叠的覆盖层，牺牲层和蚀刻停止层的保护层结构以覆盖存储单元。 在保护层结构上形成绝缘中间层。 形成绝缘中间层以形成露出保护层结构的开口。 暴露的保护层结构被部分去除以暴露上电极。 在暴露的上电极上形成布线以填充开口。