公开(公告)号：US20180229899A1

公开(公告)日：2018-08-16

申请号：US15515147

申请日：2016-11-24

申请人： Dae Suck KANG ,  Jung Koo KANG

发明人： Bo Youn SUNG

IPC分类号： B65D41/04 ,  B65D41/62 ,  B65D51/20

CPC分类号： B65D41/0478 ,  B65D41/0421 ,  B65D41/0435 ,  B65D41/28 ,  B65D41/62 ,  B65D51/20

摘要： A container cap assembly includes an inner cap coupled to an inner surface and an upper end of a container neck and an outer cap maintaining the coupled state of the inner cap, thereby keeping the inside of a container sealed. The container cap assembly includes an inner cap including an outer wall portion corresponding to an inner surface of a neck of a container and a flange portion extending outward from an upper end of the outer wall portion to correspond to an upper end of the neck. An outer cap has a ceiling covering an upper portion of the inner cap and a side wall portion covering an outer circumferential surface of the neck, the ceiling and the side wall portion being integrally formed. The inner circumferential surface of the side wall portion has female threads corresponding to male threads on the outer circumferential surface of the neck.

公开(公告)号：US06897080B2

公开(公告)日：2005-05-24

申请号：US10339431

申请日：2003-01-09

申请人： Jung-Koo Kang

发明人： Jung-Koo Kang

IPC分类号： H01S5/30 ,  H01S5/12 ,  H01L21/20

CPC分类号： H01S5/12 ,  H01S5/1231

摘要： Disclosed is a method for manufacturing a laser diode used as a light source in an optical communication system. The method comprises the steps of: forming a first photoresist pattern arranged at an interval corresponding to a predetermined grating cycle on the entire front surface of a semiconductor layer where a diffraction grating is to be formed; forming a diffraction-grating layer by etching the underlying semiconductor layer using the first photoresist pattern as an etching mask; forming a mask pattern on the diffraction-grating layer except for a predetermined diffraction-grating area; removing the mask pattern formed on top of parts of the diffraction-grating layer to be removed; and, removing the mask pattern resulting in the removal of the exposed parts of the diffraction-grating layer.

摘要翻译： 公开了一种在光通信系统中制造用作光源的激光二极管的方法。 该方法包括以下步骤：在要形成衍射光栅的半导体层的整个前表面上形成以与预定光栅周期对应的间隔布置的第一光致抗蚀剂图案; 通过使用第一光致抗蚀剂图案作为蚀刻掩模蚀刻下面的半导体层来形成衍射光栅层; 在除了预定的衍射光栅区域之外的衍射光栅层上形成掩模图案; 去除形成在要去除的衍射光栅层的部分顶部上的掩模图案; 并且去除掩模图案，导致去除衍射光栅层的暴露部分。

公开(公告)号：US20050040416A1

公开(公告)日：2005-02-24

申请号：US10781508

申请日：2004-02-18

申请人： Jeong-Seok Lee ,  Jung-Koo Kang ,  Seong-Taek Hwang

发明人： Jeong-Seok Lee ,  Jung-Koo Kang ,  Seong-Taek Hwang

IPC分类号： H01S5/10 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/227 ,  H01S5/30 ,  H01S5/50 ,  H01L33/00

CPC分类号： H01S5/0607 ,  H01S5/0425 ,  H01S5/1206 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/2275 ,  H01S5/50 ,  H01S5/5072

摘要： A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.

摘要翻译： 一种具有水平激光结构的增益钳位半导体光放大器，其中激光器的振荡方向与信号的放大方向不同，以及用于制造增益钳位半导体光放大器的方法。 增益钳位半导体光放大器包括用于放大光信号的增益层。 沿着增益层的纵向方向在增益层的两侧形成布拉格晶格层，使得具有相应波长的光能够在垂直于增益层的纵向的方向上共振。 无源光波导抑制在布拉格晶格层的晶格之间谐振的光。 电极向增益层提供电流，并且电流阻挡层防止电流流向除了增益层之外的区域。

公开(公告)号：US5729195A

公开(公告)日：1998-03-17

申请号：US773701

申请日：1996-12-27

申请人： Jung-Koo Kang

发明人： Jung-Koo Kang

IPC分类号： B60S1/46 ,  B60J1/20 ,  B60R21/00 ,  B60Q1/00

CPC分类号： B60J1/2094 ,  B60R21/00

摘要： An improved system for preventing scattering of glass pieces during a vehicle accident, which is capable of preventing scattering of glass pieces when a vehicle accident occurs, whereby it is possible to protect a driver or passengers in the vehicle from being injured due to the scattering glass pieces. The system includes a high viscosity liquid tank disposed in an engine room and filled with high viscosity liquid, a motor for pumping the high viscosity liquid from the high viscosity liquid tank, a collision detection sensor for detecting a collision of a vehicle, a controller for controlling the motor, and a plurality of spraying nozzles for spraying the high viscosity liquid, whereby the high viscosity liquid is sprayed toward the windshield at the moment of a vehicle accident for bonding the windshield.

摘要翻译： 一种用于在车辆事故期间防止玻璃片散射的改进系统，其能够在发生车辆事故时防止玻璃片的散射，由此可以保护车辆中的驾驶员或乘客不会由于散射玻璃而受伤 件 该系统包括设置在发动机室中的高粘度液体槽，并填充高粘度液体，用于从高粘度液体罐泵送高粘度液体的电动机，用于检测车辆碰撞的碰撞检测传感器，用于检测车辆碰撞的控制器 控制电动机和多个用于喷射高粘度液体的喷嘴，由此在车辆事故发生时将高粘度液体喷射到挡风玻璃上，以粘接挡风玻璃。

公开(公告)号：US07081643B2

公开(公告)日：2006-07-25

申请号：US10781508

申请日：2004-02-18

申请人： Jeong-Seok Lee ,  Jung-Koo Kang ,  Seong-Taek Hwang

发明人： Jeong-Seok Lee ,  Jung-Koo Kang ,  Seong-Taek Hwang

IPC分类号： H01L29/22

CPC分类号： H01S5/0607 ,  H01S5/0425 ,  H01S5/1206 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/2275 ,  H01S5/50 ,  H01S5/5072

摘要： A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.

摘要翻译： 一种具有水平激光结构的增益钳位半导体光放大器，其中激光器的振荡方向与信号的放大方向不同，以及用于制造增益钳位半导体光放大器的方法。 增益钳位半导体光放大器包括用于放大光信号的增益层。 沿着增益层的纵向方向在增益层的两侧形成布拉格晶格层，使得具有相应波长的光能够在垂直于增益层的纵向的方向上共振。 无源光波导抑制在布拉格晶格层的晶格之间谐振的光。 电极向增益层提供电流，并且电流阻挡层防止电流流向除了增益层之外的区域。

公开(公告)号：US10604306B2

公开(公告)日：2020-03-31

申请号：US15515147

申请日：2016-11-24

申请人： Dae Suck Kang ,  Jung Koo Kang

发明人： Bo Youn Sung

IPC分类号： B65D41/04 ,  B65D41/62 ,  B65D41/28 ,  B65D51/20

摘要： A container cap assembly includes an inner cap coupled to an inner surface and an upper end of a container neck and an outer cap maintaining the coupled state of the inner cap, thereby keeping the inside of a container sealed. The container cap assembly includes an inner cap including an outer wall portion corresponding to an inner surface of a neck of a container and a flange portion extending outward from an upper end of the outer wall portion to correspond to an upper end of the neck. An outer cap has a ceiling covering an upper portion of the inner cap and a side wall portion covering an outer circumferential surface of the neck, the ceiling and the side wall portion being integrally formed. The inner circumferential surface of the side wall portion has female threads corresponding to male threads on the outer circumferential surface of the neck.

公开(公告)号：US5821134A

公开(公告)日：1998-10-13

申请号：US882309

申请日：1997-06-25

申请人： Byung-Kwon Kang ,  Jung-Koo Kang ,  You-Ri Jo ,  Jong-Deog Kim ,  Seung-Jo Jeong ,  Young-kun Sin

发明人： Byung-Kwon Kang ,  Jung-Koo Kang ,  You-Ri Jo ,  Jong-Deog Kim ,  Seung-Jo Jeong ,  Young-kun Sin

IPC分类号： G02F1/025 ,  H01L21/306 ,  H01L21/00

CPC分类号： G02F1/025 ,  Y10S438/955

摘要： Disclosed is a method of producing an electron-absorption modulator having a reverse mesa structure. In the electron-absorption modulator, a first clad of a first conductivity type, an active layer of the first conductivity type, a second clad layer of a second conductivity type and an ohmic contact layer of the second conductivity type are formed on a semiconductor substrate of the first conductivity type. Then, a predetermined mask pattern is formed on the ohmic contact layer. Afterwards, the ohmic contact layer is etched by using the mask pattern. Then, the second clad layer and the active layer below the ohmic contact layer are etched in the form of the reverse mesa structure to expose the first clad layer. Then, the first clad layer is etched at a predetermined depth in the form of a mesa structure.

摘要翻译： 公开了一种具有逆台面结构的电子吸收调制器的制造方法。 在电子吸收调制器中，在半导体衬底上形成第一导电类型的第一包层，第一导电类型的有源层，第二导电类型的第二覆盖层和第二导电类型的欧姆接触层 的第一导电类型。 然后，在欧姆接触层上形成预定的掩模图案。 之后，通过使用掩模图案来蚀刻欧姆接触层。 然后，第二覆盖层和欧姆接触层下方的有源层以反面台面结构的形式被蚀刻以暴露第一覆层。 然后，以台面结构的形式在预定深度处蚀刻第一覆盖层。