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    Enhanced storage states in an memory
    1.
    发明授权
    Enhanced storage states in an memory 失效
    内存中增强的存储状态

    公开(公告)号：US06807080B2

    公开(公告)日：2004-10-19

    申请号：US10150744

    申请日：2002-05-17

    申请人： Jurgen Thomas Rickes ,  Hugh Pryor McAdams ,  Scott Robert Summerfelt

    发明人： Jurgen Thomas Rickes ,  Hugh Pryor McAdams ,  Scott Robert Summerfelt

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.

    摘要翻译： 具有增强存储状态的机制的存储器，而不将电压提升到损坏存储单元结构的电平。 根据本教导的存储单元包括能够切换存储状态的存储结构。 根据本教导的存储器包括通过向存储结构的第一节点施加第一电压并且将第二电压施加到存储结构的第二节点来写入存储单元的装置，使得第一和第二电压具有相反的 极性

    Cutting Insert and Milling Cutter
    3.
    发明申请
    Cutting Insert and Milling Cutter 失效
    切割刀片和铣刀

    公开(公告)号：US20080240871A1

    公开(公告)日：2008-10-02

    申请号：US12090452

    申请日：2006-08-22

    申请人： Jurgen Thomas Bar ,  Jochen Hecht

    发明人： Jurgen Thomas Bar ,  Jochen Hecht

    IPC分类号： B23C5/02 ,  B23C5/22

    CPC分类号： B23C5/08 ,  B23C5/202 ,  B23C2200/0416 ,  B23C2200/367 ,  B23C2215/20 ,  Y10T407/191 ,  Y10T407/1924 ,  Y10T407/196 ,  Y10T407/2274 ,  Y10T407/23

    摘要： The invention relates to a cutting insert having an essentially parallelepiped-shaped basic body with two larger spaced-apart longitudinal surfaces (10,11) which are connected to one another by two smaller transverse surfaces (12, 13) and two smaller longitudinal surfaces (14) designed as rake faces, wherein the smaller longitudinal surfaces (14) form with the adjacent surfaces a respective, encircling, closed cutting line which forms the cutting edges and rounded-off cutting corners, and the larger longitudinal surface (10, 11) merges on both sides via respective rounded-off edges into the smaller transverse surface (12, 13), and one of the rounded-off cutting corners is designed so as to project relative to a basic shape which is determined by the cutting lines, on both sides, of the larger longitudinal surfaces (10, 11) with the smaller longitudinal surfaces (14).

    摘要翻译： 本发明涉及一种具有基本上平行六面体形状的基体的切削刀片，其具有两个较大的间隔开的纵向表面（10,11），两个较大的间隔开的纵向表面（10,11）通过两个较小的横向表面（12,13）和两个较小的纵向表面 14）设计为前刀面，其中较小的纵向表面（14）与相邻表面形成相应的环绕的切割线，其形成切割边缘和圆角切割角，并且较大的纵向表面（10,11） 在两侧通过相应的四边形边缘合并到较小的横向表面（12,13）中，并且其中一个四舍五入的切割角被设计成相对于由切割线确定的基本形状而突出，在 较大的纵向表面（10,11）的两侧具有较小的纵向表面（14）。

    Reconfiguring storage modes in a memory
    4.
    发明授权
    Reconfiguring storage modes in a memory 失效
    重新配置存储器中的存储模式

    公开(公告)号：US06657881B1

    公开(公告)日：2003-12-02

    申请号：US10150743

    申请日：2002-05-17

    申请人： Jurgen Thomas Rickes ,  Ralph Hurley Raymer Lanham

    发明人： Jurgen Thomas Rickes ,  Ralph Hurley Raymer Lanham

    IPC分类号： G11C1122

    CPC分类号： G11C11/56 ,  G11C11/22 ,  G11C11/5657 ,  G11C2211/5641

    摘要： A memory which is capable of reconfiguration between a first mode in which each storage cell is capable of storing a pair of data bits and a second mode in which each storage cell is capable of storing a single data. A memory according to the present teachings includes a storage cell having a first structure and a second structure each capable of a storage state and mechanisms for reconfiguring the memory between a first mode in which the storage states of the first and second structures indicate a first and a second data bit, respectively, and a second mode in which the storage states combine to indicate a data bit.

    摘要翻译： 一种存储器，其能够在其中每个存储单元能够存储一对数据位的第一模式和其中每个存储单元能够存储单个数据的第二模式中进行重配置。 根据本教导的存储器包括具有第一结构和第二结构的存储单元，每个存储单元都具有存储状态，以及用于在第一模式和第二模式之间重新配置存储器的机构，其中第一和第二结构的存储状态指示第一和第二结构， 第二数据位和第二模式，其中存储状态组合以指示数据位。