公开(公告)号：US08242795B2

公开(公告)日：2012-08-14

申请号：US12298721

申请日：2007-03-29

申请人： Katsumi Kushiya ,  Satoru Kuriyagawa

发明人： Katsumi Kushiya ,  Satoru Kuriyagawa

IPC分类号： G01R31/26

CPC分类号： H01L31/18 ,  H02S50/10 ,  H02S99/00 ,  Y02E10/541

摘要： The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%). Thus, the property of the module 2′ that the module 2′ does not show considerable deterioration even after storage in an open state for 1,000 hours can be correctly evaluated.

摘要翻译： 正确地评估了在用弱光照射时模块恢复其转换效率等的CIS基薄膜太阳能电池模块的性能。 以恒定光太阳能模拟器（太阳模拟器）1D对CIS基薄膜太阳能电池模块进行常规的湿热测试，使得光源1E的功率被调节，使得太阳模拟器1D发射 对应于多云天气中的太阳辐射量的弱光，即导致100-300W / m 2的辐照度，并且在相同温度，湿度和相同温度下在整个测试期间模块连续照射弱光 储存期间与常规的试验条件（在85℃的温度下，黑暗中储存1000小时，相对湿度为85％）相同。 因此，即使在打开状态下存储1000小时后，模块2'的性能也不会显着降低，所以可以正确地评估模块2'的性能。

公开(公告)号：US20110067755A1

公开(公告)日：2011-03-24

申请号：US12993232

申请日：2009-05-19

申请人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Satoru Kuriyagawa

发明人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Satoru Kuriyagawa

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/0322 ,  C23C14/185 ,  C23C14/3414 ,  C23C14/5866 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/0323 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of manufacturing a CIS-based thin film solar cell that achieves high photoelectric conversion efficiency comprises: forming a backside electrode layer on a substrate; forming a p-type CIS-based light absorbing layer thereon; and further forming an n-type transparent and electrically conductive film. The above-mentioned forming a p-type CIS-based light absorbing layer comprises: forming a metal precursor film (30a) at least comprising a first metal layer (31, 32) containing a I group element and a second metal layer (33) containing a III group element; and selenizing and/or sulfurizing the metal precursor film, and the above-mentioned forming the metal precursor film includes forming either one of the first metal layer (31, 32) or the second metal layer (33) of at least two layers including a layer (31) that contains an alkali metal and a layer (32) that substantially does not contain the alkali metal.

摘要翻译： 实现高光电转换效率的CIS系薄膜太阳能电池的制造方法包括：在基板上形成背面电极层; 在其上形成p型CIS基光吸收层; 并进一步形成n型透明导电膜。 上述形成p型CIS系的光吸收层包括：形成至少包含含有I族元素的第一金属层（31,32）和第二金属层（33）的金属前体膜（30a） 含有III族元素; 并且对金属前体膜进行硒化和/或硫化，并且上述形成金属前体膜包括形成至少两层的第一金属层（31,32）或第二金属层（33）中的任一个，包括 含有碱金属的层（31）和基本上不含碱金属的层（32）。

公开(公告)号：US20100210064A1

公开(公告)日：2010-08-19

申请号：US12671068

申请日：2009-05-18

申请人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Satoru Kuriyagawa

发明人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Satoru Kuriyagawa

IPC分类号： H01L31/032

CPC分类号： H01L31/0749 ,  H01L31/022425 ,  H01L31/0323 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.

摘要翻译： 为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2） 。 然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5） 层（3）。 此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22） 其基本上不含有碱金属。

公开(公告)号：US20080110495A1

公开(公告)日：2008-05-15

申请号：US11722604

申请日：2005-12-26

申请人： Masaru Onodera ,  Satoru Kuriyagawa ,  Yoshiaki Tanaka

发明人： Masaru Onodera ,  Satoru Kuriyagawa ,  Yoshiaki Tanaka

IPC分类号： H01L31/00

CPC分类号： C23C8/06 ,  C23C8/00 ,  C23C8/02 ,  C23C10/02 ,  C23C12/00 ,  C23C14/5866 ,  H01L31/0322 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

摘要： A simple device is used to make the temperature in an apparatus even and improve the state of being in contact with reactant gases, selenium, and sulfur.A fan 3 as a device for atmosphere homogenization is disposed in an apparatus, and the work is disposed in the manner which enables a reactant gas to circulate smoothly. Namely, flat platy works 2 are disposed apart from each other at a certain distance parallel to the direction of the major axis of the apparatus while keeping the plates vertical so that the apparatus has passages within the group of works and has gas passages over and under the works and on both sides thereof. Thus, each work is apt to come into contact with the reactant gases in the apparatus and the temperature in the apparatus is even. The state of being in contact with the reactant gases, selenium, and sulfur is improved.

摘要翻译： 使用简单的装置来使设备中的温度均匀并且改善与反应物气体，硒和硫接触的状态。 作为大气均质化装置的风扇3设置在设备中，并且以能使反应气体顺利循环的方式设置工件。 也就是说，平板状工件2在平行于设备的长轴方向的一定距离处彼此分开地设置，同时保持板垂直，使得设备在工作组内具有通道，并具有上下通道 作品及其两面。 因此，每个工作都容易与装置中的反应气体接触，并且装置中的温度是均匀的。 与反应物气体，硒和硫接触的状态得到改善。

公开(公告)号：US07989256B2

公开(公告)日：2011-08-02

申请号：US12671068

申请日：2009-05-18

申请人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Satoru Kuriyagawa

发明人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Satoru Kuriyagawa

IPC分类号： H01L21/00

CPC分类号： H01L31/0749 ,  H01L31/022425 ,  H01L31/0323 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.

摘要翻译： 为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2） 。 然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5） 层（3）。 此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22） 其基本上不含有碱金属。

公开(公告)号：US20090072837A1

公开(公告)日：2009-03-19

申请号：US12298721

申请日：2007-03-29

申请人： Katsumi Kushiya ,  Satoru Kuriyagawa

发明人： Katsumi Kushiya ,  Satoru Kuriyagawa

IPC分类号： G01R31/26 ,  G01R31/00

CPC分类号： H01L31/18 ,  H02S50/10 ,  H02S99/00 ,  Y02E10/541

摘要： The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%). Thus, the property of the module 2′ that the module 2′ does not show considerable deterioration even after storage in an open state for 1,000 hours can be correctly evaluated.

摘要翻译： 正确地评估了在用弱光照射时模块恢复其转换效率等的CIS基薄膜太阳能电池模块的性能。 以恒定光太阳能模拟器（太阳模拟器）1D对CIS基薄膜太阳能电池模块进行常规的湿热测试，使得光源1E的功率被调节，使得太阳模拟器1D发射 对应于多云天气中的太阳辐射量的弱光，即导致100-300W / m 2的辐照度，并且在相同温度，湿度和相同温度的整个测试期间，模块连续照射弱光 储存期间与常规的试验条件（在85℃的温度下，黑暗中储存1000小时，相对湿度为85％）相同。 因此，即使在打开状态下存储1000小时后，模块2'的性能也不会显着降低，所以可以正确地评估模块2'的性能。

公开(公告)号：US20080032044A1

公开(公告)日：2008-02-07

申请号：US11722861

申请日：2005-12-27

申请人： Satoru Kuriyagawa ,  Yoshiaki Tanaka

发明人： Satoru Kuriyagawa ,  Yoshiaki Tanaka

IPC分类号： C23C16/06

CPC分类号： H01L31/1884 ,  C23C16/407 ,  Y02E10/50

摘要： The triethylaluminum contained as an impurity in low-purity raw-material diethylzinc, which is inexpensive, is utilized as an additive to reduce the cost of film formation. Diethylzinc having a low purity (99.99-98% or 99.99-90%) is used as a raw material to produce a ZnO transparent conductive film by the MOCVD (metal-organic chemical vapor deposition) method. Water vapor (H2O) is used as an oxidizing agent and the triethylaluminum contained as an impurity in the raw material is utilized as an additive (diborane is further added as an additive) to cause the diethylzinc, the water vapor (H2O), and the triethylaluminum (and the diborane) to undergo a vapor-phase reaction to produce a ZnO transparent conductive film.

摘要翻译： 作为低成本的原料二乙基锌中的杂质含有的三乙基铝被用作添加剂以降低成膜成本。 使用低纯度的二乙基锌（99.99-98％或99.99-90％）作为原料，通过MOCVD（金属有机化学气相沉积）法制造ZnO透明导电膜。 使用水蒸汽（H 2 O 2）作为氧化剂，将作为原料的杂质含有的三乙基铝用作添加剂（进一步添加乙硼烷作为添加剂），使二乙基锌， 水蒸汽（H 2 O 2）和三乙基铝（和乙硼烷）进行气相反应以制备ZnO透明导电膜。

公开(公告)号：US20070283998A1

公开(公告)日：2007-12-13

申请号：US11722853

申请日：2005-12-27

申请人： Satoru Kuriyagawa ,  Yoshiaki Tanaka ,  Yoshinori Nagoya

发明人： Satoru Kuriyagawa ,  Yoshiaki Tanaka ,  Yoshinori Nagoya

IPC分类号： H01L31/06 ,  C23C14/00

CPC分类号： H01L31/0322 ,  H01L21/02568 ,  H01L21/02614 ,  Y02E10/541

摘要： A precursor film having a required gallium component proportion is formed easily at low cost. A precursor film for use in forming the light absorption layer of a CIS type thin-film solar cell, etc., or a method for forming the film are provided. A Cu—Ga layer having a high gallium component proportion (Ga/(Ga+Cu)) of X % by weight Ga is formed as a first layer by sputtering using a precursor film comprising a Cu—Ga alloy layer having the gallium component proportion of X % by weight Ga as a target (deposition step A). Thereafter, a copper layer is formed as a second layer on the first layer by sputtering using a copper layer as a target (deposition step B) to thereby form a precursor film having the required gallium component proportion of Y % (X>Y) by weight Ga as the sum of the first layer and second layer. A method of film formation by simultaneous vapor deposition is also possible.

摘要翻译： 以低成本容易地形成具有所需镓成分比例的前体膜。 提供了用于形成CIS型薄膜太阳能电池等的光吸收层的前体膜或其形成方法。 通过使用包含具有镓成分比例的Cu-Ga合金层的前体膜通过溅射形成具有X重量％Ga的镓成分比例高（Ga /（Ga + Cu））的Cu-Ga层 的X重量％的Ga作为靶（沉积步骤A）。 此后，通过使用铜层作为靶，通过溅射在第一层上形成铜层作为第二层（沉积步骤B），从而通过以下方式形成具有所需镓成分比例为Y％（X> Y）的前体膜 重量Ga作为第一层和第二层的总和。 通过同时气相沉积的成膜方法也是可行的。

公开(公告)号：US20070289624A1

公开(公告)日：2007-12-20

申请号：US11659880

申请日：2005-08-09

申请人： Satoru Kuriyagawa ,  Yoshinori Nagoya ,  Yoshiaki Tanaka

发明人： Satoru Kuriyagawa ,  Yoshinori Nagoya ,  Yoshiaki Tanaka

IPC分类号： H01L31/0272

CPC分类号： H01L31/0322 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

摘要： Film formation is conducted at a low temperature to improve conversion efficiency and productivity and to enable a wider choice of substrate materials to be used. The invention relates to the light absorption layer of a CIS compound semiconductor thin-film solar cell and to a method of forming the layer. The light absorption layer comprises a compound represented by Cux(In1-yGay)(Se1-zSz)2 and having a chalcopyrite type structure, the proportions of the components satisfying 0.86≦x≦0.98, 0.05≦y≦0.25, 0≦z≦0.3, x=αT+β, α=0.015y−0.00025, and β=−7.9y+1.105, provided that T (° C.) is anneal temperature and the allowable range for x is ±0.02. The layer is formed by the selenization method at a low temperature (about 500≦T≦550). As the substrate is used a soda-lime glass having a low melting point.

摘要翻译： 在低温下进行成膜以提高转换效率和生产率，并能够使用更广泛的基板材料。 本发明涉及CIS化合物半导体薄膜太阳能电池的光吸收层及其形成方法。 光吸收层包含由Cu x Si（In 1-y Ga y y）（Se 1-z）表示的化合物， 具有黄铜矿型结构，组分的比例满足0.86 <= x <= 0.98,0.05 <= y <= 0.25,0 <= z <= 0.3，x =αT+β，α= 0.015y-0.00025和β= -7.9y + 1.105，条件是T（℃）为退火温度，x的允许范围为±0.02。 该层通过硒化法在低温（约500 <= T <= 550）下形成。 由于使用的基材是低熔点的钠钙玻璃。