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公开(公告)号：US20110011451A1
公开(公告)日：2011-01-20
申请号：US12921222
申请日：2008-03-07
IPC分类号： H01L31/0264
CPC分类号： H01L31/03923 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.
摘要翻译： 在通过依次堆叠光吸收层，高电阻缓冲层和窗口层而获得的CIS基薄膜太阳能电池的集成结构中，与光吸收层相邻的第一缓冲层由含有 镉（Cd），锌（Zn）或铟（In），与第一缓冲层相邻的第二缓冲层由氧化锌基薄膜制成，形成第三缓冲层以覆盖通过成形暴露的端面 光吸收层，第一缓冲层，第二缓冲层和第二缓冲层的顶端面的布线图案，第三缓冲层由氧化锌系薄膜构成。
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2.发明申请公开(公告)号：US20110018089A1
公开(公告)日：2011-01-27
申请号：US12920772
申请日：2008-03-07
IPC分类号： H01L31/0352
CPC分类号： H01L31/0749 , H01L31/046 , Y02E10/541
摘要： In a stack structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order, the buffer layer has a stack structure of two or more layers including first and second buffer layers, the first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), the second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, the first buffer layer has a thickness equal to or smaller than 20 nm, and the second buffer layer has a thickness equal to or larger than 100 nm
摘要翻译： 在通过依次堆叠p型CIS光吸收层，缓冲层和n型透明导电膜获得的CIS基薄膜太阳能电池的堆叠结构中，缓冲层具有两个或 更多层包括第一和第二缓冲层，邻接p型光吸收层的第一缓冲层由含有镉（Cd），锌（Zn）或铟（In）的化合物制成，第二缓冲层与第一缓冲层 缓冲层由氧化锌系薄膜构成，第一缓冲层的厚度为20nm以下，第二缓冲层的厚度为100nm以上
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公开(公告)号：US08575478B2
公开(公告)日：2013-11-05
申请号：US12921222
申请日：2008-03-07
CPC分类号： H01L31/03923 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.
摘要翻译： 在通过依次堆叠光吸收层，高电阻缓冲层和窗口层而获得的CIS基薄膜太阳能电池的集成结构中，与光吸收层相邻的第一缓冲层由含有 镉（Cd），锌（Zn）或铟（In），与第一缓冲层相邻的第二缓冲层由氧化锌基薄膜制成，形成第三缓冲层以覆盖通过成形暴露的端面 光吸收层，第一缓冲层，第二缓冲层和第二缓冲层的顶端面的布线图案，第三缓冲层由氧化锌系薄膜构成。
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公开(公告)号：US08501519B2
公开(公告)日：2013-08-06
申请号：US13515721
申请日：2010-12-14
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.
摘要翻译： 一种CIS系薄膜太阳能电池的制造方法，其特征在于，在高应变点玻璃基板上形成碱性控制层，在碱性控制层上形成背面电极层，形成CIS系的光吸收层 在所述CIS基光吸收层上形成n型透明导电膜，其中所述碱性控制层形成为允许所述高应变中包含的碱金属的热扩散的厚度 此外，除了从高应变点玻璃基板的热扩散以外，CIS系的光吸收层还具有从外部添加的碱金属。
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公开(公告)号：US20120258562A1
公开(公告)日：2012-10-11
申请号：US13515721
申请日：2010-12-14
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.
摘要翻译： 一种CIS系薄膜太阳能电池的制造方法，其特征在于，在高应变点玻璃基板上形成碱性控制层，在碱性控制层上形成背面电极层，形成CIS系的光吸收层 在所述CIS基光吸收层上形成n型透明导电膜，其中所述碱性控制层形成为允许所述高应变中包含的碱金属的热扩散的厚度 此外，除了从高应变点玻璃基板的热扩散以外，CIS系的光吸收层还具有从外部添加的碱金属。
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公开(公告)号：US5538903A
公开(公告)日：1996-07-23
申请号：US342445
申请日：1994-11-18
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing a solar cell, comprising the steps of forming a layer of n-type compound semiconductor, a layer of p-type compound semiconductor, and an electrode layer on a glass substrate, wherein at least one of said steps of forming a layer of compound semiconductor layer comprises preparing a paste by mixing a semiconductor raw material and a viscous agent, applying said paste to said substrate, drying said paste to harden it, and firing the dried paste, and vibrating said substrate during or after the application of the paste, to remove the bubbles in the paste, resulting in a semiconductor layer which is smooth, dense, and having good adhesion, thus realizing a solar cell with improved and uniform characteristics.
摘要翻译： 一种制造太阳能电池的方法，包括以下步骤：在玻璃基板上形成n型化合物半导体层，p型化合物半导体层和电极层，其中至少一个形成 化合物半导体层的层包括通过混合半导体原料和粘性剂来制备糊料，将所述糊剂施加到所述基材上，干燥所述糊料以使其硬化，并焙烧干燥的糊料，并在施加之后或之后振动所述基材 糊状物，以除去糊料中的气泡，产生光滑，致密，粘附性好的半导体层，从而实现了具有改善且均匀特性的太阳能电池。
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公开(公告)号：US5994642A
公开(公告)日：1999-11-30
申请号：US89
申请日：1998-03-13
申请人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
发明人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
IPC分类号： C23C14/06 , H01L21/363 , H01L27/142 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.
摘要翻译： PCT No.PCT / JP97 / 01791 Sec。 371日期1998年3月13日 102（e）1998年3月13日PCT PCT 1997年5月27日PCT公布。 公开号WO97 / 45880 PCT 日期1997年12月4日公开了通过改进的紧密间隔升华法形成质量好的CdTe膜的方法。 该方法包括：在支撑体上涂敷含有CdTe半导体材料的糊状物，形成在支撑体表面含有半导体材料的涂膜的工序; 紧密配置支撑部件的步骤和要形成CdTe膜的基板，以使涂膜面对基板的表面; 以及在基板上形成CdTe膜的步骤，通过加热涂膜和基板，并使涂膜中的半导体材料蒸发。
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