公开(公告)号：US20090148997A1

公开(公告)日：2009-06-11

申请号：US12277533

申请日：2008-11-25

申请人： Kazuhiro FUKUCHI

发明人： Kazuhiro FUKUCHI

IPC分类号： H01L21/268

CPC分类号： H01L23/544 ,  B41M5/262 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2924/13091

摘要： Reduction of damage to a semiconductor device due to a marking process while inhibiting deterioration of a mark can not be achieved in conventional processes for manufacturing semiconductor devices. A process for manufacturing the semiconductor device 100 involves irradiating the marking film 21 with an energy beam through the transparent protective film 31 after the protective film 31 is formed, and such irradiation causes a chemical modification of the material of the marking film 21 to create the marks. According to the above-described process for manufacturing the semiconductor device 100, the region for the marking or the upper surface of the marking film 21 is sheathed by the protective film 31, so that a damage to the semiconductor chip 11 due to the generations of dust, exothermic heat, gas, stress or the like during the marking operation can be reduced. This allows achieving the process for manufacturing the semiconductor device 100 that provides a manufacture of better quality of the marks.

摘要翻译： 在制造半导体器件的传统工艺中，不能实现减少由于标记过程而导致的半导体器件对标记的劣化的损害。 半导体装置100的制造方法包括：在形成保护膜31之后，通过透明保护膜31将标记膜21照射到能量束上，并且这种照射使标记膜21的材料发生化学改性，从而形成 分数。 根据上述半导体装置100的制造工序，标记用的标记区域或标记膜21的上表面被保护膜31所覆盖，从而由于产生了半导体芯片 可以减少打标动作时的灰尘，放热，气体，应力等。 这允许实现制造提供更好质量标记的半导体器件100的工艺。

公开(公告)号：US20060202607A1

公开(公告)日：2006-09-14

申请号：US11367690

申请日：2006-03-06

申请人： Yasushi Sano ,  Takuo Tamura ,  Hiroshi Kikuchi ,  Kazushi Miyata ,  Kazuhiro Fukuchi

发明人： Yasushi Sano ,  Takuo Tamura ,  Hiroshi Kikuchi ,  Kazushi Miyata ,  Kazuhiro Fukuchi

IPC分类号： H01J63/04

CPC分类号： H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/127

摘要： In an image display device having, in each pixel, an electron emitter containing a first electrode, an insulating layer, and a second electrode arranged in this order, the insulating layer is formed by anodic oxidation using the first electrode and has defects, if any, in a number of 3×1019 or less cubic centimeter. The electron emitter has a longer life, and the image display device using the electron emitter has improved reliability and image quality.

摘要翻译： 在图像显示装置中，在每个像素中具有依次排列的包含第一电极，绝缘层和第二电极的电子发射体，通过使用第一电极的阳极氧化形成绝缘层，如果有的话 在3×10 9个或更少立方厘米的数量内。 电子发射体具有更长的寿命，并且使用电子发射器的图像显示装置具有改进的可靠性和图像质量。

公开(公告)号：US07083577B2

公开(公告)日：2006-08-01

申请号：US10279104

申请日：2002-10-24

申请人： Shinji Osawa ,  Hiroyuki Inoue ,  Kazuhiro Fukuchi ,  Masahisa Tanimoto

发明人： Shinji Osawa ,  Hiroyuki Inoue ,  Kazuhiro Fukuchi ,  Masahisa Tanimoto

IPC分类号： A61B5/00 ,  A61M25/00

CPC分类号： A61M25/09 ,  A61M2025/09083

摘要： A guide wire having an elongated core wire provided with a tabular distal end portion, and a coiled wire provided on an outer circumference of the core wire, wherein the distal end portion of the core wire is provided with a cutout section or a rased section so that a diametrical cross-sectional area of the distal end portion of the core wire gradually decreases toward a distal end thereof.

公开(公告)号：US07776703B2

公开(公告)日：2010-08-17

申请号：US12277533

申请日：2008-11-25

申请人： Kazuhiro Fukuchi

发明人： Kazuhiro Fukuchi

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L23/544 ,  B41M5/262 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2924/13091

摘要： Reduction of damage to a semiconductor device due to a marking process while inhibiting deterioration of a mark can not be achieved in conventional processes for manufacturing semiconductor devices. A process for manufacturing the semiconductor device 100 involves irradiating the marking film 21 with an energy beam through the transparent protective film 31 after the protective film 31 is formed, and such irradiation causes a chemical modification of the material of the marking film 21 to create the marks. According to the above-described process for manufacturing the semiconductor device 100, the region for the marking or the upper surface of the marking film 21 is sheathed by the protective film 31, so that a damage to the semiconductor chip 11 due to the generations of dust, exothermic heat, gas, stress or the like during the marking operation can be reduced. This allows achieving the process for manufacturing the semiconductor device 100 that provides a manufacture of better quality of the marks.

摘要翻译： 在制造半导体器件的传统工艺中，不能实现减少由于标记过程而导致的半导体器件对标记的劣化的损害。 半导体装置100的制造方法包括：在形成保护膜31之后，通过透明保护膜31将标记膜21照射到能量束上，并且这种照射使标记膜21的材料发生化学改性，从而形成 分数。 根据上述半导体装置100的制造工序，标记用的标记区域或标记膜21的上表面被保护膜31所覆盖，从而由于产生了半导体芯片 可以减少打标动作时的灰尘，放热，气体，应力等。 这允许实现制造提供更好质量标记的半导体器件100的工艺。

公开(公告)号：US20090196978A1

公开(公告)日：2009-08-06

申请号：US12359405

申请日：2009-01-26

申请人： Nobuaki NAKASU ,  Tadao Edamura ,  Hirofumi Sunaoshi ,  Takemi Igeta ,  Kazuhiro Fukuchi

发明人： Nobuaki NAKASU ,  Tadao Edamura ,  Hirofumi Sunaoshi ,  Takemi Igeta ,  Kazuhiro Fukuchi

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： H05K3/225 ,  G02F1/136259 ,  G02F2203/69 ,  H01L27/124 ,  H05K1/0269 ,  H05K3/0008 ,  H05K2203/0126 ,  H05K2203/013

摘要： The pattern defect repairing apparatus comprises an application head, a waste ejection board, a waste ejection vessel, a waste ejection board moving stage, a head lifting stage, and an application unit base. The application head comprises an ink-jet head and a head holder. An ink jet head has an ejection nozzle, and is attached to the head holder and able to be moved up and down by the head lifting stage. The waste ejection vessel is provided to the waste ejection board and able to be moved between a waste ejection position and a retreated position by the waste ejection board moving stage. Repairing material is ejected for waste onto the waste ejection board set in the vicinity of the nozzle immediately before application to repair the defect. The tip end of the nozzle is prevented from being dried.

摘要翻译： 图案缺陷修复装置包括应用头，废弃排出板，废弃排出容器，废弃排出板移动台，头部提升台以及应用单元基座。 应用头包括喷墨头和头架。 喷墨头具有喷射嘴，并且附接到头部保持器并且能够通过头部提升台上下移动。 废弃物排出容器设置在废弃物排出板上，能够通过废弃排出板移动台在废弃物排出位置和退避位置之间移动。 修理材料在应用前立即将废料排出到设置在喷嘴附近的废弃物排出板上，以修复缺陷。 防止喷嘴的前端被干燥。

公开(公告)号：US08206775B2

公开(公告)日：2012-06-26

申请号：US12359405

申请日：2009-01-26

申请人： Nobuaki Nakasu ,  Tadao Edamura ,  Hirofumi Sunaoshi ,  Takemi Igeta ,  Kazuhiro Fukuchi

发明人： Nobuaki Nakasu ,  Tadao Edamura ,  Hirofumi Sunaoshi ,  Takemi Igeta ,  Kazuhiro Fukuchi

IPC分类号： C23C16/52 ,  B05D5/12 ,  B05D3/00 ,  B28B19/00 ,  G01R31/00 ,  G01R31/08 ,  H01H31/02 ,  B05C11/00

CPC分类号： H05K3/225 ,  G02F1/136259 ,  G02F2203/69 ,  H01L27/124 ,  H05K1/0269 ,  H05K3/0008 ,  H05K2203/0126 ,  H05K2203/013

摘要： The pattern defect repairing apparatus comprises an application head, a waste ejection board, a waste ejection vessel, a waste ejection board moving stage, a head lifting stage, and an application unit base. The application head comprises an ink-jet head and a head holder. An ink jet head has an ejection nozzle, and is attached to the head holder and able to be moved up and down by the head lifting stage. The waste ejection vessel is provided to the waste ejection board and able to be moved between a waste ejection position and a retreated position by the waste ejection board moving stage. Repairing material is ejected for waste onto the waste ejection board set in the vicinity of the nozzle immediately before application to repair the defect. The tip end of the nozzle is prevented from being dried.

摘要翻译： 图案缺陷修复装置包括应用头，废弃排出板，废弃排出容器，废弃排出板移动台，头部提升台以及应用单元基座。 应用头包括喷墨头和头架。 喷墨头具有喷射嘴，并且附接到头部保持器并且能够通过头部提升台上下移动。 废弃物排出容器设置在废弃物排出板上，能够通过废弃排出板移动台在废弃物排出位置和退避位置之间移动。 修理材料在应用前立即将废料排出到设置在喷嘴附近的废弃物排出板上，以修复缺陷。 防止喷嘴的前端被干燥。