公开(公告)号：US5445709A

公开(公告)日：1995-08-29

申请号：US154566

申请日：1993-11-19

申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/06

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

摘要翻译： 平行板等离子体蚀刻装置包括布置在处理室中的基座电极和淋浴电极。 将半导体晶片放置在基座电极上。 在淋浴电极中形成由多个处理气体供给孔限定的淋浴区域。 淋浴电极被冷却块冷却，使淋浴电极的有效电极部分具有温度梯度，使得有效电极部分的中心部分的温度低于有效电极周边部分的温度 一部分。 淋浴区域的直径被选择为小于晶片的直径5至25％，使得由有效电极部分的温度梯度引起的晶片上的蚀刻各向异性程度的平面均匀度的降低被补偿 。 选择有效电极部分的直径大于晶片的尺寸5至35％，使得通过蚀刻形成的待蚀刻侧壁的锥角设定为85°至90°。