中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.068 seconds)

    FIELD EFFECT ELECTRON EMITTING APPARATUS
    1.
    发明申请
    FIELD EFFECT ELECTRON EMITTING APPARATUS 失效
    场效应电子发射装置

    公开(公告)号：US20090225532A1

    公开(公告)日：2009-09-10

    申请号：US12274047

    申请日：2008-11-19

    Applicant: Wei Beng NG ,  Takehisa Ishida

    Inventor： Wei Beng NG ,  Takehisa Ishida

    IPC: G02F1/13357 ,  H01J1/02 ,  H01J1/62 ,  H01J9/12

    CPC classification number: H01J29/04 ,  G02F1/1336 ,  G02F2001/133614 ,  G02F2001/133625 ,  H01J31/127 ,  H01J2329/0428 ,  H01J2329/0436 ,  H01J2329/0442

    Abstract: A field effect electron emitting apparatus comprising a substrate, a plurality of wires embedded in the substrate, at least a portion of each wire being exposed from the substrate and extending generally perpendicularly therefrom and including magnetic material, wherein the average wire spacing is less than 30 μm, the average spacing height ratio is between 1 and 3 and the average wire aspect ratio is greater than 3. Also a method of manufacturing an electron emitting apparatus, a field effect display having such a field effect electron emitting apparatus, an illumination apparatus having such a field effect electron emitting apparatus, and a backlight apparatus for a liquid crystal display having such a field effect electron emitting apparatus.

    Abstract translation: 一种场效应电子发射设备，包括一基板，多个引线嵌入该基板中，每条导线的至少一部分从该基片露出并大体垂直延伸并包括磁性材料，其中平均导线间距小于30 平均间隔高度比在1和3之间，平均线纵横比大于3.而且，制造电子发射装置的方法，具有这种场效应电子发射装置的场效应显示器，具有 这种场效应电子发射装置和具有这种场效应电子发射装置的液晶显示器的背光装置。

    Field effect electron emitting apparatus
    3.
    发明授权
    Field effect electron emitting apparatus 失效
    场效应电子发射装置

    公开(公告)号：US08159121B2

    公开(公告)日：2012-04-17

    申请号：US12274047

    申请日：2008-11-19

    Applicant: Wei Beng Ng ,  Takehisa Ishida

    Inventor： Wei Beng Ng ,  Takehisa Ishida

    IPC: H01J17/49

    CPC classification number: H01J29/04 ,  G02F1/1336 ,  G02F2001/133614 ,  G02F2001/133625 ,  H01J31/127 ,  H01J2329/0428 ,  H01J2329/0436 ,  H01J2329/0442

    Abstract: A field effect electron emitting apparatus comprising a substrate, a plurality of wires embedded in the substrate, at least a portion of each wire being exposed from the substrate and extending generally perpendicularly therefrom and including magnetic material, wherein the average wire spacing is less than 30 μm, the average spacing height ratio is between 1 and 3 and the average wire aspect ratio is greater than 3. Also a method of manufacturing an electron emitting apparatus, a field effect display having such a field effect electron emitting apparatus, an illumination apparatus having such a field effect electron emitting apparatus, and a backlight apparatus for a liquid crystal display having such a field effect electron emitting apparatus.

    Abstract translation: 一种场效应电子发射设备，包括一基板，多个引线嵌入该基板中，每条导线的至少一部分从该基片露出并大体垂直延伸并包括磁性材料，其中平均导线间距小于30 平均间隔高度比在1和3之间，平均线纵横比大于3.而且，制造电子发射装置的方法，具有这种场效应电子发射装置的场效应显示器，具有 这种场效应电子发射装置和具有这种场效应电子发射装置的液晶显示器的背光装置。

    ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND INFORMATION DISPLAY REPRODUCING APPARATUS
    5.
    发明申请
    ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND INFORMATION DISPLAY REPRODUCING APPARATUS 审中-公开
    电子发射装置，电子源，图像显示装置和信息显示再现装置

    公开(公告)号：US20090026914A1

    公开(公告)日：2009-01-29

    申请号：US12173988

    申请日：2008-07-16

    Applicant: Kazushi Nomura ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Yoji Teramoto ,  Shunsuke Murakami

    Inventor： Kazushi Nomura ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Yoji Teramoto ,  Shunsuke Murakami

    IPC: H01J1/54

    CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J2329/0442 ,  H01J2329/0457

    Abstract: To provide an electron-emitting device having an electron-emitting film containing a metal and a carbon, wherein a density of the electron-emitting film other than the metal is determined to be not less than 1.2 g/cm3 and not more than 1.8 g/cm3, and a hydrogen content in the electron-emitting film is determined to be not less than 15 atm % and not more than 40 atm % with respect to the all atoms composing the electron-emitting film. Further, a concentration of the metal in the range of a depth from a surface of this electron-emitting film up to 10 nm is determined to be not less than 0.1 atm % and not more than 40 atm % with respect to number of carbon atoms contained in the electron-emitting film.

    Abstract translation: 为了提供具有含有金属和碳的电子发射膜的电子发射器件，其中除了金属之外的电子发射膜的密度确定为不小于1.2g / cm 3且不大于1.8g / cm 3，并且电子发射膜中的氢含量相对于构成电子发射膜的全部原子被确定为不小于15atm％且不大于40atm％。 此外，相对于碳原子数，将从该电子发射膜的表面到深度10nm的深度范围内的金属浓度确定为不小于0.1atm％且不大于40atm％ 包含在电子发射膜中。

Patent Agency Ranking