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1.发明申请LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FORMED THEREFROM, ORGANIC ELECTRONIC DEVICE, ORGANIC THIN-FILM TRANSISTOR AND DISPLAY DEVICE USING THE ORGANIC SEMICONDUCTOR MATERIAL, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI ELECTRON CONJUGATED COMPOUND 审中-公开含有取代基的化合物，有机电子器件的有机半导体材料，有机电子器件，有机薄膜晶体管和使用有机半导体材料的显示器件，用于制造膜状产物的方法，PI电子结合化合物和用于生产PI电子的方法 共轭化合物公开(公告)号：US20130095605A1
公开(公告)日：2013-04-18
申请号：US13704480
申请日：2011-06-14
申请人： Daisuke Goto , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takanori Tano , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
发明人： Daisuke Goto , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takanori Tano , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
IPC分类号： C07C69/013 , H01L51/00 , C07C17/363 , C07C1/22 , C07D495/04 , C07D495/22
CPC分类号： C07C69/013 , C07C1/213 , C07C1/22 , C07C17/357 , C07C17/363 , C07C69/24 , C07C69/28 , C07C69/63 , C07C2602/10 , C07C2603/26 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D495/04 , C07D495/22 , C09D5/24 , C09D11/52 , H01L51/0004 , H01L51/0005 , H01L51/001 , H01L51/0056 , H01L51/0058 , H01L51/0074 , H01L51/0558 , C07C25/22 , C07C15/20 , C07C15/60
摘要： A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q2 to Q5 each represent a hydrogen atom, a halogen atom or a monovalent organic group; Q1 and Q6 each represent a hydrogen atom or a monovalent organic group other than the leaving substituent; and among the monovalent organic groups represented by Q1 to Q6, adjacent monovalent organic groups may be linked together to form a ring.
摘要翻译： 由通式（I）表示的离去的含有取代基的化合物，其中可以将离去的含有取代基的化合物转化为由通式（Ia）表示的化合物和通式（II）表示的化合物，通过向 留下含有取代基的化合物，在通式（I），（Ia）和（II）中，X和Y各自表示氢原子或离去取代基，其中X和Y中的一个为离去取代基，另一个为氢 原子; Q2至Q5各自表示氢原子，卤素原子或一价有机基团; Q1和Q6各自表示氢原子或除离去取代基以外的一价有机基团; 在由Q1至Q6表示的一价有机基团中，相邻的一价有机基团可以连接在一起形成环。
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公开(公告)号：US20100224865A1
公开(公告)日：2010-09-09
申请号：US12670313
申请日：2008-11-13
申请人： Keiichiro Yutani , Takumi Yamaca , Takanori Tano
发明人： Keiichiro Yutani , Takumi Yamaca , Takanori Tano
CPC分类号： H01L51/0545 , H01L27/283 , H01L27/3274 , H01L51/0004 , H01L51/102
摘要： A disclosed organic transistor includes a substrate; a gate electrode; a gate insulating film; source-drain electrodes; and an organic semiconductor layer. The gate electrode and the gate insulating film are disposed on the substrate in the stated order, and the source-drain electrodes and the organic semiconductor layer are disposed at least on the gate insulating film in the stated order. At least one of the source-drain electrodes includes a first part disposed directly above the gate electrode, a second part disposed not over the gate electrode, and a connecting part which has a width smaller than a width of the first part and connects the first part and the second part.
摘要翻译： 公开的有机晶体管包括基板; 栅电极; 栅极绝缘膜; 源极 - 漏极; 和有机半导体层。 栅极电极和栅极绝缘膜按照所述的顺序设置在基板上，源极 - 漏极和有机半导体层至少以所述顺序设置在栅极绝缘膜上。 源极 - 漏极电极中的至少一个包括直接设置在栅极电极上方的第一部分，不在栅极电极上方的第二部分和宽度小于第一部分的宽度的连接部分，并且连接第一部分 部分和第二部分。
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公开(公告)号：US09224959B2
公开(公告)日：2015-12-29
申请号：US14172572
申请日：2014-02-04
申请人： Daisuke Goto , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
发明人： Daisuke Goto , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
IPC分类号： C07D495/02 , H01L51/00 , C07C1/213 , C07C15/20 , C07C15/24 , C07C15/28 , C07C15/38 , C07C15/56 , C07C15/58 , C07C15/60 , C07C17/093 , C07C17/10 , C07C17/361 , C07C25/22 , C07C69/013 , C07C69/18 , C07C69/63 , C07D321/00 , C07D409/14 , C07D495/04 , C07D495/06 , H01L51/05
CPC分类号： H01L51/0052 , C07C1/213 , C07C15/20 , C07C15/24 , C07C15/28 , C07C15/38 , C07C15/56 , C07C15/58 , C07C15/60 , C07C17/093 , C07C17/10 , C07C17/361 , C07C25/22 , C07C69/013 , C07C69/18 , C07C69/63 , C07C2602/10 , C07C2603/24 , C07C2603/44 , C07C2603/50 , C07C2603/52 , C07D321/00 , C07D409/14 , C07D495/04 , C07D495/06 , H01L51/0074 , H01L51/0558
摘要： A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of X1 and X2 or a pair of Y1 and Y2 each represent a hydrogen atom; the other pair each represent a group selected from the group consisting of a halogen atom and a substituted or unsubstituted acyloxy group having one or more carbon atoms; a pair of the acyloxy groups represented by the pair of X1 and X2 or the pair of Y1 and Y2 may be identical or different, or may be bonded together to form a ring; R1 to R4 each represent a hydrogen atom or a substituent; and Q1 and Q2 each represent a hydrogen atom, a halogen atom or a monovalent organic group, and may be bonded together to form a ring.
摘要翻译： 含有由以下通式（I）表示的部分结构的含有取代基的化合物：其中一对X1和X2或一对Y1和Y2各自表示氢原子; 另一对各自表示选自卤原子和具有一个或多个碳原子的取代或未取代的酰氧基的基团; 由一对X1和X2表示的一对酰氧基或一对Y1和Y2可以相同或不同，或者可以结合在一起形成环; R 1〜R 4各自表示氢原子或取代基; 并且Q1和Q2各自表示氢原子，卤素原子或一价有机基团，并且可以结合在一起形成环。
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公开(公告)号：US20100193775A1
公开(公告)日：2010-08-05
申请号：US12670325
申请日：2007-10-17
申请人： Keiichiro Yutani , Hidenori Tomono , Takumi Yamaga
发明人： Keiichiro Yutani , Hidenori Tomono , Takumi Yamaga
CPC分类号： H01L51/0015 , H01L27/283 , H01L51/0005 , H01L51/0022 , H01L51/0558
摘要： An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.
摘要翻译： 有机晶体管包括基板; 栅极电极和栅极绝缘膜，按顺序形成在基板上; 以及形成在至少栅极绝缘膜上的源电极，漏电极和有机半导体层。 紫外光从没有栅电极的一侧辐射到基板，透过基板和栅极绝缘膜，在栅电极处被反射并在有机半导体层被吸收。 吸收了紫外线的有机半导体层的电导率低于未吸收紫外线的有机半导体层的电导率。
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5.发明申请LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM CONTAINING THE MATERIAL, ORGANIC ELECTRONIC DEVICE CONTAINING THE FILM, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI-ELECTRON CONJUGATED COMPOUND 审中-公开含有取代基的化合物，有机半导体材料，含有材料的有机半导体膜，含有薄膜的有机电子器件，生产薄膜状产品的方法，PI-电子结合化合物及其生产PI-电子结合化合物的方法公开(公告)号：US20140175416A1
公开(公告)日：2014-06-26
申请号：US14172564
申请日：2014-02-04
申请人： Daisuke GOTO , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
发明人： Daisuke GOTO , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
IPC分类号： H01L51/00
CPC分类号： H01L51/0052 , C07C1/213 , C07C15/20 , C07C15/24 , C07C15/28 , C07C15/38 , C07C15/56 , C07C15/58 , C07C15/60 , C07C17/093 , C07C17/10 , C07C17/361 , C07C25/22 , C07C69/013 , C07C69/18 , C07C69/63 , C07C2602/10 , C07C2603/24 , C07C2603/44 , C07C2603/50 , C07C2603/52 , C07D321/00 , C07D409/14 , C07D495/04 , C07D495/06 , H01L51/0074 , H01L51/0558
摘要： A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of X1 and X2 or a pair of Y1 and Y2 each represent a hydrogen atom; the other pair each represent a group selected from the group consisting of a halogen atom and a substituted or unsubstituted acyloxy group having one or more carbon atoms; a pair of the acyloxy groups represented by the pair of X1 and X2 or the pair of Y1 and Y2 may be identical or different, or may be bonded together to form a ring; R1 to R4 each represent a hydrogen atom or a substituent; and Q1 and Q2 each represent a hydrogen atom, a halogen atom or a monovalent organic group, and may be bonded together to form a ring.
摘要翻译： 含有由以下通式（I）表示的部分结构的含有取代基的化合物：其中一对X1和X2或一对Y1和Y2各自表示氢原子; 另一对各自表示选自卤原子和具有一个或多个碳原子的取代或未取代的酰氧基的基团; 由一对X1和X2表示的一对酰氧基或一对Y1和Y2可以相同或不同，或者可以结合在一起形成环; R 1〜R 4各自表示氢原子或取代基; 并且Q1和Q2各自表示氢原子，卤素原子或一价有机基团，并且可以结合在一起形成环。
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6.发明申请ORGANIC SEMICONDUCTIVE MATERIAL PRECURSOR CONTAINING DITHIENOBENZODITHIOPHENE DERIVATIVE, INK, INSULATING MEMBER, CHARGE-TRANSPORTING MEMBER, AND ORGANIC ELECTRONIC DEVICE 有权含有二硝基苯并二氢E TIVE TIVE TIVE TIVE TIVE K K K K E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E公开(公告)号：US20130096320A1
公开(公告)日：2013-04-18
申请号：US13704444
申请日：2011-06-14
申请人： Toshiya Sagisaka , Satoshi Yamamoto , Takashi Okada , Masato Shinoda , Daisuke Goto , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani , Takuji Kato , Takanori Tano
发明人： Toshiya Sagisaka , Satoshi Yamamoto , Takashi Okada , Masato Shinoda , Daisuke Goto , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani , Takuji Kato , Takanori Tano
IPC分类号： C07D495/22
CPC分类号： H01L51/0068 , C07D495/22 , C09D11/52 , H01L51/001 , H01L51/0074 , H01L51/0558
摘要： An organic semiconductive material precursor containing a dithienobenzodithiophene derivative expressed by General Formula I: in General Formula I, X and Y represent groups bonded together, upon application of external stimulus, to form X—Y which is eliminated from the compound expressed by General Formula I; R1 and R2 each represent a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 each represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.
摘要翻译： 含有由通式I表示的二噻吩并苯并噻吩衍生物的有机半导体材料前体：在通式I中，X和Y表示在施加外部刺激时键合在一起的基团，形成从通式I表示的化合物中除去的X-Y; R1和R2各自表示取代或未取代的烷基，或取代或未取代的芳基; R 3〜R 10各自表示氢原子，取代或未取代的烷基，取代或未取代的烷氧基，取代或未取代的烷硫基或取代或未取代的芳基。
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公开(公告)号：US20110215306A1
公开(公告)日：2011-09-08
申请号：US13037930
申请日：2011-03-01
申请人： Takuji KATO , Satoshi YAMAMOTO , Toshiya SAGISAKA , Takanori TANO , Masato SHINODA , Daisuke GOTO , Shinji MATSUMOTO , Masataka MOHRI , Keiichiro YUTANI , Chihaya ADACHI , Masafumi TORII
发明人： Takuji KATO , Satoshi YAMAMOTO , Toshiya SAGISAKA , Takanori TANO , Masato SHINODA , Daisuke GOTO , Shinji MATSUMOTO , Masataka MOHRI , Keiichiro YUTANI , Chihaya ADACHI , Masafumi TORII
IPC分类号： H01L51/30
CPC分类号： H01L51/0051 , B82Y10/00 , H01L51/0045 , H01L51/0074 , H01L51/0562 , H01L51/102
摘要： To provide an organic semiconductor element, containing: a source electrode containing a first organic compound layer and a second organic compound layer, at least one of the layers having an organic semiconductor active region; and a drain electrode containing the first organic compound layer and the second organic compound layer, as well as providing an organic electrode, containing: a laminated film, in which a layer of a tetrathiafulvalene derivative expressed by the following general formula I and a layer of an electron accepting compound are laminated:
摘要翻译： 为了提供一种有机半导体元件，其含有：包含第一有机化合物层和第二有机化合物层的源电极，所述层中的至少一层具有有机半导体活性区域; 以及含有第一有机化合物层和第二有机化合物层的漏电极，以及提供有机电极，其包含：层叠膜，其中由以下通式I表示的四硫富瓦烯衍生物层和 层叠电子接受性化合物
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公开(公告)号：US20090103036A1
公开(公告)日：2009-04-23
申请号：US12246720
申请日：2008-10-07
申请人： Atsushi Onodera , Keiichiro Yutani
发明人： Atsushi Onodera , Keiichiro Yutani
IPC分类号： G02F1/1343
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1292 , H01L27/3262 , H01L27/3265
摘要： A disclosed active matrix substrate includes plural pixels arranged in a matrix form. At least one of a source electrode, a gate electrode, and a capacitor electrode of pixel component electrodes of each of the pixels is shared by adjacent pixels.
摘要翻译： 所公开的有源矩阵基板包括以矩阵形式布置的多个像素。 每个像素的像素分量电极的源电极，栅极电极和电容器电极中的至少一个被相邻像素共享。
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9.发明授权Organic electronic device containing an organic semiconductor material film which contains a leaving substituent-containing compound 有权含有含有离去取代基的化合物的有机半导体材料膜的有机电子器件公开(公告)号：US09123896B2
公开(公告)日：2015-09-01
申请号：US14172564
申请日：2014-02-04
申请人： Daisuke Goto , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
发明人： Daisuke Goto , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Masato Shinoda , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani
IPC分类号： H01L51/00 , H01J1/62 , C07D495/02 , C07C1/213 , C07C15/20 , C07C15/24 , C07C15/28 , C07C15/38 , C07C15/56 , C07C15/58 , C07C15/60 , C07C17/093 , C07C17/10 , C07C17/361 , C07C25/22 , C07C69/013 , C07C69/18 , C07C69/63 , C07D321/00 , C07D409/14 , C07D495/04 , C07D495/06 , H01L51/05
CPC分类号： H01L51/0052 , C07C1/213 , C07C15/20 , C07C15/24 , C07C15/28 , C07C15/38 , C07C15/56 , C07C15/58 , C07C15/60 , C07C17/093 , C07C17/10 , C07C17/361 , C07C25/22 , C07C69/013 , C07C69/18 , C07C69/63 , C07C2602/10 , C07C2603/24 , C07C2603/44 , C07C2603/50 , C07C2603/52 , C07D321/00 , C07D409/14 , C07D495/04 , C07D495/06 , H01L51/0074 , H01L51/0558
摘要： A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of X1 and X2 or a pair of Y1 and Y2 each represent a hydrogen atom; the other pair each represent a group selected from the group consisting of a halogen atom and a substituted or unsubstituted acyloxy group having one or more carbon atoms; a pair of the acyloxy groups represented by the pair of X1 and X2 or the pair of Y1 and Y2 may be identical or different, or may be bonded together to form a ring; R1 to R4 each represent a hydrogen atom or a substituent; and Q1 and Q2 each represent a hydrogen atom, a halogen atom or a monovalent organic group, and may be bonded together to form a ring.
摘要翻译： 含有由以下通式（I）表示的部分结构的含有取代基的化合物：其中一对X1和X2或一对Y1和Y2各自表示氢原子; 另一对各自表示选自卤原子和具有一个或多个碳原子的取代或未取代的酰氧基的基团; 由一对X1和X2表示的一对酰氧基或一对Y1和Y2可以相同或不同，或者可以结合在一起形成环; R 1〜R 4各自表示氢原子或取代基; 并且Q1和Q2各自表示氢原子，卤素原子或一价有机基团，并且可以结合在一起形成环。
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10.发明授权Organic semiconductive material precursor containing dithienobenzodithiophene derivative, ink, insulating member, charge-transporting member, and organic electronic device 有权含有二噻吩并苯并噻吩衍生物的有机半导体材料前体，油墨，绝缘构件，电荷输送构件和有机电子装置公开(公告)号：US08952181B2
公开(公告)日：2015-02-10
申请号：US14039575
申请日：2013-09-27
申请人： Toshiya Sagisaka , Satoshi Yamamoto , Takashi Okada , Masato Shinoda , Daisuke Goto , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani , Takuji Kato , Takanori Tano
发明人： Toshiya Sagisaka , Satoshi Yamamoto , Takashi Okada , Masato Shinoda , Daisuke Goto , Shinji Matsumoto , Masataka Mohri , Keiichiro Yutani , Takuji Kato , Takanori Tano
IPC分类号： C07D333/50 , C07D495/22 , H01L51/00 , C09D11/52 , H01L51/05
CPC分类号： H01L51/0068 , C07D495/22 , C09D11/52 , H01L51/001 , H01L51/0074 , H01L51/0558
摘要： An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: X and Y are groups capable of bonding together upon application of an external stimulus to form a compound X—Y that is capable of eliminating from the dithienobenzodithiophene derivative; R1 and R2 are each independently a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.
摘要翻译： 包含含有下式的二噻吩并苯并二噻吩衍生物的有机半导体材料前体的油墨：X和Y是在施加外部刺激时能够结合在一起形成能够从二噻吩并苯并噻吩衍生物中除去的化合物X-Y的基团; R 1和R 2各自独立地为取代或未取代的烷基，或取代或未取代的芳基; R 3〜R 10各自独立地为氢原子，取代或未取代的烷基，取代或未取代的烷氧基，取代或未取代的烷硫基，或取代或未取代的芳基。
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