摘要:
A wiring board includes a variable wettability layer situated on a top surface of a support board and containing a material of which a critical surface tension changes by energy given thereto. A conductive layer is situated inside a concave portion formed in the variable wettability layer. The concave portion has opposite side walls formed in tapered surfaces inclining so that a distance between the side walls is reduced toward a bottom of the concave portion in a cross-sectional shape taken along a plane perpendicular to a conducting direction of the conductive layer. Upper edges of the side walls are formed in gently curved surfaces.
摘要:
An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: X and Y are groups capable of bonding together upon application of an external stimulus to form a compound X-Y that is capable of eliminating from the dithienobenzodithiophene derivative; R1 and R2 are each independently a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.
摘要翻译:包含含有下式的二噻吩并苯并二噻吩衍生物的有机半导体材料前体的油墨:X和Y是在施加外部刺激时能够结合在一起形成能够从二噻吩并苯并噻吩衍生物中除去的化合物X-Y的基团; R 1和R 2各自独立地为取代或未取代的烷基,或取代或未取代的芳基; R 3〜R 10各自独立地为氢原子,取代或未取代的烷基,取代或未取代的烷氧基,取代或未取代的烷硫基,或取代或未取代的芳基。
摘要:
Disclosed is a laminated structure, including a substrate, a wettability changing layer on the substrate, the wettability changing layer including a material, a critical surface tension of the material being changed by providing energy thereto, and an electrically conductor layer on the substrate, the electrically conductor layer formed on a region of the wettability changing layer, the region being provided with the energy, wherein the material includes a structural unit including a side chain and a structural unit including no side chain.
摘要:
A laminated structure includes a wettability variable layer formed on a substrate, including a material whose critical surface tension varies by receiving energy so that high and low surface energy regions are formed; a conductive layer formed in one of the high surface energy regions; and an insulating layer formed in such a manner as to cover the conductive layer, wherein another one of the high surface energy regions is formed in such a manner as to surround a periphery of a circuit formation region in which a plurality of the conductive layers are formed; and the insulating layer is formed in such a manner as to also cover the another one of the high surface energy regions so that an adhesive guard ring region is formed between the wettability variable layer and the insulating layer.
摘要:
A laminate structure is disclosed that has a region having high surface free energy and a region having low surface free energy that are well separated, has high adhesiveness between an underlying layer and a conductive layer, and can be formed easily with low cost. The laminate structure includes a wettability-variable layer including a first surface free energy region of a first film thickness and a second surface free energy region of a second film thickness, and a conductive layer formed on the second surface free energy region of the wettability-variable layer. The second film thickness is less than the first film thickness and the surface free energy of the second surface free energy region is made higher than the surface free energy of the first surface free energy region by applying a predetermined amount of energy on the second surface free energy region.
摘要:
A disclosed organic transistor includes a substrate; a gate electrode; a gate insulating film; source-drain electrodes; and an organic semiconductor layer. The gate electrode and the gate insulating film are disposed on the substrate in the stated order, and the source-drain electrodes and the organic semiconductor layer are disposed at least on the gate insulating film in the stated order. At least one of the source-drain electrodes includes a first part disposed directly above the gate electrode, a second part disposed not over the gate electrode, and a connecting part which has a width smaller than a width of the first part and connects the first part and the second part.
摘要:
Disclosed is a diamine represented by a general formula of: wherein X is an ester bond, each of m and n is independently a natural number, each of p and r is independently 0 or 1, q is an integer of 0 or more, a sum of m, n, and q is 20 or less, and when q is 0, p is 1 and r is 0.
摘要:
A disclosed laminated structure includes a substrate; a wettability varying layer formed on the substrate, the wettability varying layer including a material whose critical surface tension is changed by receiving energy; and an electrode layer formed on the wettability varying layer, the electrode layer forming a pattern based on the wettability varying layer. The material whose critical surface tension is changed by receiving energy includes a polymer including a primary chain and a side chain, the side chain including a multi-branched structure.
摘要:
An electron device includes at least an electrode layer, a semiconductor layer and an insulator layer laminated on a substrate, wherein the insulator layer contains a polyimide material obtained by using at least one of a polyamic acid and derivatives of the polyamic acid, the polyamic acid being obtained by reacting one or more of tetracarbonic acid dianhydride compounds selected from the group consisting of a tetracarbonic anhydride and derivatives of the tetracarbonic anhydride, with a diamine compound, the tetracarbonic dianhydride compound containing one or more components of tetracarbonic dianhydride compound selected from a specific group of tetracarbonic acid dianhydrides and the derivatives thereof.
摘要:
A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q2 to Q5 each represent a hydrogen atom, a halogen atom or a monovalent organic group; Q1 and Q6 each represent a hydrogen atom or a monovalent organic group other than the leaving substituent; and among the monovalent organic groups represented by Q1 to Q6, adjacent monovalent organic groups may be linked together to form a ring.