公开(公告)号：US20120276712A1

公开(公告)日：2012-11-01

申请号：US13546222

申请日：2012-07-11

申请人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

发明人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

IPC分类号： H01L21/762

CPC分类号： H01L29/7853 ,  H01L29/045 ,  H01L29/66795

摘要： According to one embodiment, a semiconductor device having a Ge— or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0

摘要翻译： 根据一个实施例，具有Ge或SiGe鳍结构的半导体器件包括在Si衬底的表面区域上沿着一个方向形成的凸形有源区，Si1-xGex的缓冲层（0

公开(公告)号：US20120241722A1

公开(公告)日：2012-09-27

申请号：US13240246

申请日：2011-09-22

申请人： Keiji Ikeda ,  Toshifumi Irisawa ,  Toshinori Numata ,  Tsutomu Tezuka

发明人： Keiji Ikeda ,  Toshifumi Irisawa ,  Toshinori Numata ,  Tsutomu Tezuka

IPC分类号： H01L29/165

CPC分类号： H01L29/4983 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/6656

摘要： A field effect transistor according to an embodiment includes: a semiconductor layer; a source region and a drain region formed at a distance from each other in the semiconductor layer; a gate insulating film formed on a portion of the semiconductor layer, the portion being located between the source region and the drain region; a gate electrode formed on the gate insulating film; and a gate sidewall formed on at least one of side faces of the gate electrode, the side faces being located on a side of the source region and on a side of the drain region, the gate sidewall being made of a high dielectric material. The source region and the drain region are separately-placed from the corresponding side faces of the gate electrode.

摘要翻译： 根据实施例的场效应晶体管包括：半导体层; 在半导体层中形成为彼此相距一定距离的源极区域和漏极区域; 形成在半导体层的一部分上的栅极绝缘膜，该部分位于源极区域和漏极区域之间; 形成在栅极绝缘膜上的栅电极; 以及栅极侧壁，其形成在所述栅电极的至少一个侧面上，所述侧面位于所述源极区域的一侧，并且在所述漏极区域的侧面上，所述栅极侧壁由高介电材料制成。 源极区域和漏极区域与栅电极的相应侧面分开设置。

公开(公告)号：US20120175705A1

公开(公告)日：2012-07-12

申请号：US13422985

申请日：2012-03-16

申请人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

发明人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L29/41791 ,  H01L29/66795

摘要： According to one embodiment, a method of manufacturing a MOS semiconductor device. In the method, a gate electrode is formed on a gate insulating film provided on a channel region which is a part of an Si layer and which is interposed between a source/drain region, and a film mainly includes of Ge is made to grow on the source/drain region. Then, and the film mainly includes of Ge is made to react with a metal, forming an intermetallic compound film having a depthwise junction position identical to a growth interface of the film mainly includes of Ge.

摘要翻译： 根据一个实施例，一种制造MOS半导体器件的方法。 在该方法中，在设置在作为Si层的一部分的沟道区域上的栅极绝缘膜上形成栅极电极，该栅极绝缘膜介于源极/漏极区域之间，并且使主要包括Ge的膜生长在 源极/漏极区域。 然后，使主要由Ge构成的膜与金属反应，形成与膜的生长界面相同的深度方向的连接位置的金属间化合物膜主要由Ge构成。

公开(公告)号：US20110180847A1

公开(公告)日：2011-07-28

申请号：US12888674

申请日：2010-09-23

申请人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

发明人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/7853 ,  H01L29/045 ,  H01L29/66795

摘要： According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0

摘要翻译： 根据一个实施例，具有Ge或SiGe鳍结构的半导体器件包括在Si衬底的表面区域上沿着一个方向形成的凸形有源区，Si1-xGex的缓冲层（0

公开(公告)号：US07655516B2

公开(公告)日：2010-02-02

申请号：US11790549

申请日：2007-04-26

申请人： Keiji Ikeda

发明人： Keiji Ikeda

IPC分类号： H01L21/8238 ,  H01L29/76

CPC分类号： H01L21/823814 ,  H01L21/28255 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/45 ,  H01L29/665 ,  H01L29/7835

摘要： In an nMOSFET, a gate electrode is formed by a silicide layer comprised of NiSi. In a surface layer of a Ge substrate on both sides of the gate electrode, NiGe layers which are germanide layers comprised of NiGe are formed. On junction interfaces between the NiGe layers and the Ge substrate, first layers are formed which are formed by segregating a predetermined atom with high concentration, and on an interface between the gate electrode and an insulation film, a second layer is formed which is formed by segregating the same atom as that of the first layer with high concentration.

摘要翻译： 在nMOSFET中，由NiSi构成的硅化物层形成栅电极。 在栅电极两侧的Ge衬底的表面层中，形成由NiGe构成的锗化物层的NiGe层。 在NiGe层和Ge衬底之间的结界面上，形成通过高浓度分离预定原子而形成的第一层，并且在栅电极和绝缘膜之间的界面上形成第二层，该第二层由 与第一层高浓度的原子分离。

公开(公告)号：US06756868B2

公开(公告)日：2004-06-29

申请号：US10252508

申请日：2002-09-24

申请人： Shinichi Sato ,  Yoshio Okamoto ,  Shigemitsu Aoki ,  Keiji Ikeda ,  Masato Morimuta

发明人： Shinichi Sato ,  Yoshio Okamoto ,  Shigemitsu Aoki ,  Keiji Ikeda ,  Masato Morimuta

IPC分类号： H01H5122

CPC分类号： H01H50/38 ,  H01H9/40 ,  H01H9/44 ,  H01H50/40

摘要： The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.

公开(公告)号：US06699921B2

公开(公告)日：2004-03-02

申请号：US09988754

申请日：2001-11-20

申请人： Keiji Ikeda

发明人： Keiji Ikeda

IPC分类号： C08K517

CPC分类号： C08K5/0025 ,  B60C1/00 ,  B60C2015/0614 ,  C08K3/06 ,  C08K5/44 ,  C08L21/00

摘要： There is provided a rubber composition whose run-flat durability is improved and in which precipitation of sulfur and a vulcanization accelerator on the rubber surface before vulcanization is prevented. Sulfur in an amount of 2 to 8 parts by weight and two or more vulcanization accelerators in a total amount of at least 5 parts by weight based on 100 parts by weight of a rubber component are used, at least one of the accelerators being a sulfen amide accelerator.

摘要翻译： 提供一种橡胶组合物，其耐久性得到改善，并且在硫化之前防止硫和硫化促进剂在橡胶表面上析出。 使用2〜8重量份的硫和相对于100重量份的橡胶成分为5重量份以上的2种以上的硫化促进剂，至少一种促进剂为亚硫酸盐 酰胺加速剂。

公开(公告)号：US06489868B1

公开(公告)日：2002-12-03

申请号：US09514160

申请日：2000-02-28

申请人： Shinichi Sato ,  Yoshio Okamoto ,  Shigemitsu Aoki ,  Keiji Ikeda ,  Masato Morimuta

发明人： Shinichi Sato ,  Yoshio Okamoto ,  Shigemitsu Aoki ,  Keiji Ikeda ,  Masato Morimuta

IPC分类号： H01H5122

CPC分类号： H01H50/38 ,  H01H9/40 ,  H01H9/44 ,  H01H50/40

摘要： The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contacts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.

摘要翻译： 本发明提供一种电磁继电器，其即使在用于中断高电压时也具有长的使用寿命，并且可以小型化。 在这种电磁继电器中，电路中断由两个或更多个由单个线圈操作并串联连接的键控电路切断。 因此，抑制了每个键控电路产生的电弧量。 因此，电磁继电器的使用寿命延长。 此外，其触点之间的空间减小，使得电磁继电器小型化。 此外，用于熄灭电弧的磁场由电路切断时产生的反电动势或反电动势形成。 因此，所产生的电弧熄灭。

公开(公告)号：US5752600A

公开(公告)日：1998-05-19

申请号：US645469

申请日：1996-05-13

申请人： Shigeho Kurashina ,  Keiji Ikeda

发明人： Shigeho Kurashina ,  Keiji Ikeda

IPC分类号： B65D85/40

CPC分类号： B65D85/40

摘要： A package for shipping and permitting display of an article, such as a wristwatch, is provided. The package is constructed with a box without a bottom and having a cutout on one side and a sleeve to display price or other indicia on two different places on a display for the watch stored within the box. A C-shaped cuff member is provided having a stopper for holding a watch thereon without it sliding during transportation. The C-shaped cuff member is also designed for holding watches having bands of different lengths.

摘要翻译： 提供用于运送并允许显示诸如手表的物品的包装。 该包装被构造成没有底部的盒子，并且在一侧具有切口，并且在套筒上存储的手表的显示器上的两个不同位置上显示价格或其他标记的套筒。 提供了一种具有用于在其上保持手表的止动件而在运输期间不滑动的C形箍套构件。 C形袖带构件也被设计用于保持具有不同长度的带的手表。

公开(公告)号：US08679961B2

公开(公告)日：2014-03-25

申请号：US13336307

申请日：2011-12-23

申请人： Keiji Ikeda

发明人： Keiji Ikeda

IPC分类号： H01L21/02 ,  H01L21/425

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/66803 ,  H01L29/78 ,  H01L29/785

摘要： According to one embodiment, a method of manufacturing a semiconductor device which includes a MISFET, includes: forming a gate insulating film on a semiconductor substrate; forming a gate electrode on the gate insulating film; implanting nitrogen equal to or more than 5.0e14 atoms/cm2 and equal to or less than 1.5e15 atoms/cm2 in the semiconductor substrate by tilted ion implantation in a direction from an outside to an inside with respect to side surfaces of the gate electrode; depositing a metal film including nickel on areas in which nitrogen atoms are implanted, the areas are in a semiconductor substrate on both sides of the gate electrode; and performing first heat processing of reacting the metal film and the semiconductor substrate and forming metal semiconductor compound layers, the shapes of the layers are controlled by the nitrogen profiles of the areas.

摘要翻译： 根据一个实施例，制造包括MISFET的半导体器件的方法包括：在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 通过相对于栅电极的侧面从外侧向内侧的倾斜离子注入，在半导体衬底中注入等于或大于5.0e14原子/ cm 2且等于或小于1.5e15原子/ cm 2的氮; 在其中注入氮原子的区域上沉积包含镍的金属膜，该区域位于栅电极两侧的半导体衬底中; 并进行使金属膜与半导体基板反应并形成金属半导体化合物层的第一热处理，通过该区域的氮分布来控制各层的形状。