Method of fabricating semiconductor laser diode
    1.
    发明授权
    Method of fabricating semiconductor laser diode 失效
    制造半导体激光二极管的方法

    公开(公告)号:US06387746B2

    公开(公告)日:2002-05-14

    申请号:US09797959

    申请日:2001-03-05

    IPC分类号: H01L218234

    摘要: A mask layer is formed on a semiconductor substrate such that an elongate opening of the mask layer extends lengthwise at an angle relative to a [011] direction of the semiconductor substrate. A ridge waveguide structure including an active layer is formed within the elongate opening on the semiconductor substrate by a selective growth method using the mask layer as a mask. The mask layer is then removed, and a clad layer is formed over the ridge waveguide structure.

    摘要翻译: 掩模层形成在半导体衬底上,使得掩模层的细长开口相对于半导体衬底的[011]方向以一定角度纵向延伸。 通过使用掩模层作为掩模的选择性生长方法,在半导体衬底上的细长开口内形成包括有源层的脊波导结构。 然后去除掩模层,并且在脊形波导结构上形成覆盖层。