公开(公告)号：US20100308442A1

公开(公告)日：2010-12-09

申请号：US12795950

申请日：2010-06-08

申请人： Yasuhiro NAKA ,  Naotaka TANAKA ,  Toshihide UEMATSU ,  Chuichi MIYAZAKI ,  Kazunari SUZUKI ,  Yasuyuki NAKAJIMA ,  Yoshiyuki ABE ,  Kenji KOHZU ,  Kosuke KITAICHI ,  Shinya OGANE

发明人： Yasuhiro NAKA ,  Naotaka TANAKA ,  Toshihide UEMATSU ,  Chuichi MIYAZAKI ,  Kazunari SUZUKI ,  Yasuyuki NAKAJIMA ,  Yoshiyuki ABE ,  Kenji KOHZU ,  Kosuke KITAICHI ,  Shinya OGANE

IPC分类号： H01L23/498 ,  H01L23/544 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/06102 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01064 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10158 ,  H01L2924/1306 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00014

摘要： In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.

摘要翻译： 在粘合带附着到半导体晶片的主表面上的状态下，在半导体晶片的后表面上形成沟槽。 为了在半导体晶片的后表面中形成沟槽，在半导体晶片的后表面上涂覆抗蚀剂膜之后，通过使用光刻技术对抗蚀剂膜进行构图。 进行抗蚀剂膜的图案化，以便不在要形成沟槽的区域中留下抗蚀剂膜。 然后，通过使用图案化的抗蚀剂膜作为掩模的干蚀刻技术，在半导体晶片的预定区域中形成沟槽。 具体地说，在切割线附近的区域形成沟槽。

公开(公告)号：US08378459B2

公开(公告)日：2013-02-19

申请号：US12795950

申请日：2010-06-08

申请人： Yasuhiro Naka ,  Naotaka Tanaka ,  Toshihide Uematsu ,  Chuichi Miyazaki ,  Kazunari Suzuki ,  Yasuyuki Nakajima ,  Yoshiyuki Abe ,  Kenji Kohzu ,  Kosuke Kitaichi ,  Shinya Ogane

发明人： Yasuhiro Naka ,  Naotaka Tanaka ,  Toshihide Uematsu ,  Chuichi Miyazaki ,  Kazunari Suzuki ,  Yasuyuki Nakajima ,  Yoshiyuki Abe ,  Kenji Kohzu ,  Kosuke Kitaichi ,  Shinya Ogane

IPC分类号： H01L23/544

CPC分类号： H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/06102 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01064 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10158 ,  H01L2924/1306 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00014

摘要： In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.

摘要翻译： 在粘合带附着到半导体晶片的主表面上的状态下，在半导体晶片的后表面上形成沟槽。 为了在半导体晶片的后表面中形成沟槽，在半导体晶片的后表面上涂覆抗蚀剂膜之后，通过使用光刻技术对抗蚀剂膜进行构图。 进行抗蚀剂膜的图案化，以便不在要形成沟槽的区域中留下抗蚀剂膜。 然后，通过使用图案化的抗蚀剂膜作为掩模的干蚀刻技术，在半导体晶片的预定区域中形成沟槽。 具体地说，在切割线附近的区域形成沟槽。