公开(公告)号：US5053104A

公开(公告)日：1991-10-01

申请号：US443665

申请日：1989-11-29

申请人： Suryadevara V. Babu ,  Joseph G. Hoffarth ,  Allan R. Knoll ,  Walter E. Mlynko ,  John F. Rembetski ,  Kenneth D. Mack

发明人： Suryadevara V. Babu ,  Joseph G. Hoffarth ,  Allan R. Knoll ,  Walter E. Mlynko ,  John F. Rembetski ,  Kenneth D. Mack

IPC分类号： C09K13/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/02019 ,  C09K13/00 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value. When the above is repeatedly done a substantially higher average etch rate is obtained.

摘要翻译： 公开了一种等离子体蚀刻工艺，其中待蚀刻的衬底首先暴露于含有挥发性有机卤化物的蚀刻剂气体。 当蚀刻速率稳定时，蚀刻剂气体中的有机卤化物被氧代替，从而衬底的蚀刻速率立即增加到相当高的值。 当重复上述操作时，获得了显着更高的平均蚀刻速率。

公开(公告)号：US5941758A

公开(公告)日：1999-08-24

申请号：US746551

申请日：1996-11-13

申请人： Kenneth D. Mack

发明人： Kenneth D. Mack

IPC分类号： B24B37/30 ,  B24B5/00

CPC分类号： B24B37/30

摘要： A method and apparatus for uniformly polishing thin films formed on a semiconductor substrate. A substrate is placed face down on a moving polishing pad so that the thin film to be polished is placed in direct contact with the moving polishing pad. To promote uniform polishing, a multiple pressure zone back pressure wafer carrier is used to apply different pressures to different portions of the backside of the substrate, forcibly pressing the substrate against the polishing pad with pneumatic or hydraulic pressure during polishing.

摘要翻译： 一种用于均匀研磨形成在半导体衬底上的薄膜的方法和装置。 将基板面朝下放置在移动的抛光垫上，使得待抛光的薄膜与移动的抛光垫直接接触。 为了促进均匀抛光，使用多压区背压晶片载体对基板的背面的不同部分施加不同的压力，在抛光期间用气动或液压强制将基板压在抛光垫上。