公开(公告)号：US08252625B2

公开(公告)日：2012-08-28

申请号：US12724265

申请日：2010-03-15

申请人： Seung Hwan Cho ,  Keun Kyu Song ,  Min Ho Yoon

发明人： Seung Hwan Cho ,  Keun Kyu Song ,  Min Ho Yoon

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558

摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.

摘要翻译： 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

公开(公告)号：US08129723B2

公开(公告)日：2012-03-06

申请号：US12146110

申请日：2008-06-25

申请人： Baek-Woon Lee ,  Keun-Kyu Song ,  Joon-Hak Oh

发明人： Baek-Woon Lee ,  Keun-Kyu Song ,  Joon-Hak Oh

IPC分类号： H01L27/14

CPC分类号： G02F1/136227 ,  G02F2001/136218

摘要： A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a shielding electrode electrically isolated from the data line, covering the data line at least in part, and having an aperture exposing the data line.

摘要翻译： 根据本发明的实施例的薄膜晶体管阵列面板包括：栅极线; 与栅极线相交的数据线; 连接到栅极线和数据线的薄膜晶体管; 连接到薄膜晶体管的像素电极; 以及屏蔽电极，与数据线电隔离，至少部分地覆盖数据线，并且具有暴露数据线的孔径。

公开(公告)号：US07994494B2

公开(公告)日：2011-08-09

申请号：US11507095

申请日：2006-08-18

申请人： Bo-Sung Kim ,  Mun-Pyo Hong ,  Yong-Uk Lee ,  Joon-Hak Oh ,  Keun-Kyu Song ,  Seung-Hwan Cho

发明人： Bo-Sung Kim ,  Mun-Pyo Hong ,  Yong-Uk Lee ,  Joon-Hak Oh ,  Keun-Kyu Song ,  Seung-Hwan Cho

IPC分类号： H01L27/32 ,  G09G3/30

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L27/3295 ,  H01L51/0003 ,  H01L51/0558

摘要： An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.

摘要翻译： 有机薄膜晶体管阵列面板包括： 基板，形成在基板上的数据线，与数据线相交并且包括栅电极的栅极线，形成在栅极线和数据线上的第一层间绝缘层，并且包括暴露栅电极的第一开口，栅极 形成在第一开口中的绝缘体，设置在栅极绝缘体上并连接到数据线的源电极，设置在栅极绝缘体上并包括与源电极相对的漏电极的像素电极，形成在源电极上的绝缘堤和 漏电极，所述绝缘组限定露出所述源电极和所述漏电极的部分的第二开口，以及形成在所述第二开口中的有机半导体。

公开(公告)号：US07919778B2

公开(公告)日：2011-04-05

申请号：US11634413

申请日：2006-12-05

申请人： Keun-Kyu Song ,  Bo-Sung Kim ,  Seung-Hwan Cho

发明人： Keun-Kyu Song ,  Bo-Sung Kim ,  Seung-Hwan Cho

IPC分类号： H01L29/08 ,  H01L21/84

CPC分类号： H01L51/0021 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/102

摘要： An organic thin film transistor (OTFT) array panel for a display device includes a gate line and a pixel electrode formed on a substrate, the gate line and pixel electrode each having a first conductive layer including a transparent conductive oxide and a second conductive layer including a metal, a data line crossing the gate line and including a source electrode, a drain electrode facing the source electrode and connected with the pixel electrode, and an organic semiconductor in contact with the source electrode and the drain electrode.

摘要翻译： 用于显示装置的有机薄膜晶体管（OTFT）阵列面板包括形成在基板上的栅极线和像素电极，栅线和像素电极各自具有包括透明导电氧化物的第一导电层和包括第 金属，与栅极线交叉的数据线，包括源电极，面对源极的漏电极，与像素电极连接，以及与源电极和漏极接触的有机半导体。

公开(公告)号：US20110025582A1

公开(公告)日：2011-02-03

申请号：US12891006

申请日：2010-09-27

申请人： Nam-Seok ROH ,  Young-Chol YANG ,  Keun-Kyu SONG

发明人： Nam-Seok ROH ,  Young-Chol YANG ,  Keun-Kyu SONG

IPC分类号： G09G3/20

CPC分类号： G02F1/133514 ,  G02F2201/52

摘要： A display device is provided, which includes, a plurality of pixels arranged in a matrix, each pixel including a first set of three primary color subpixels (R, G, B) and at least one of a second set of three primary color subpixels, (C, M, Y) wherein the first and the second sets of three primary colors have a complementary relation.

摘要翻译： 提供一种显示装置，其包括：矩阵排列的多个像素，每个像素包括第一组三原色子像素（R，G，B）和第二组三原色子像素中的至少一个， （C，M，Y），其中第一和第三组三原色具有互补关系。

公开(公告)号：US20100197074A1

公开(公告)日：2010-08-05

申请号：US12753615

申请日：2010-04-02

申请人： Keun-Kyu SONG ,  Seong-Sik SHIN ,  Bo-Sung KIM

发明人： Keun-Kyu SONG ,  Seong-Sik SHIN ,  Bo-Sung KIM

IPC分类号： H01L51/10

CPC分类号： H01L51/0545 ,  H01L27/283

摘要： A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode.

摘要翻译： 薄膜晶体管阵列面板包括形成在基板上的栅极线，形成在栅极线上并具有开口的层间绝缘膜，形成在开口中的栅绝缘体，形成在层间绝缘膜上的数据线，并且包括第一 由透明导电氧化物制成的导电层和由金属制成的第二导电层，连接到数据线并由透明导电氧化物制成的源电极，面对源极的漏电极并由透明导电氧化物制成， 连接到漏电极的像素电极以及与源电极和漏极接触的有机半导体。

公开(公告)号：US20100173451A1

公开(公告)日：2010-07-08

申请号：US12724265

申请日：2010-03-15

申请人： Seung Hwan CHO ,  Keun Kyu Song ,  Min Ho Yoon

发明人： Seung Hwan CHO ,  Keun Kyu Song ,  Min Ho Yoon

IPC分类号： H01L51/40 ,  H01L21/336

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558

摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.

摘要翻译： 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

公开(公告)号：US20100096176A1

公开(公告)日：2010-04-22

申请号：US12645458

申请日：2009-12-22

申请人： Seung-Taek LIM ,  Mun-Pyo Hong ,  Nam-Seok Roh ,  Young-Joo Song ,  Sang-Ki Kwak ,  Kwon-Young Choi ,  Keun-Kyu Song

发明人： Seung-Taek LIM ,  Mun-Pyo Hong ,  Nam-Seok Roh ,  Young-Joo Song ,  Sang-Ki Kwak ,  Kwon-Young Choi ,  Keun-Kyu Song

IPC分类号： H05K1/11

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/76805 ,  H01L21/76816 ,  H01L23/53223 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.

摘要翻译： 在制造用于液晶显示器的薄膜晶体管阵列基板的方法中，栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。 栅极线组件具有栅极线，栅电极和栅极焊盘。 栅极绝缘层沉积在绝缘基板上，使得栅极绝缘层覆盖栅极线组件。 在栅极绝缘层上依次形成半导体层和欧姆接触层。 数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。 数据线组件具有跨越栅极线，源电极，漏电极和数据焊盘的数据线。 保护层沉积到衬底上，并被图案化，从而形成露出漏电极，栅极焊盘和数据焊盘的接触孔。 用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。 将基于IZO的层沉积到衬底上并构图，从而形成像素电极，辅助栅极焊盘和辅助数据焊盘。 像素电极连接到漏电极的侧壁，辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。

公开(公告)号：US07605416B2

公开(公告)日：2009-10-20

申请号：US10531442

申请日：2003-01-23

申请人： Mun-Pyo Hong ,  Nam-Seok Roh ,  Hee-Hwan Choe ,  Keun-Kyu Song

发明人： Mun-Pyo Hong ,  Nam-Seok Roh ,  Hee-Hwan Choe ,  Keun-Kyu Song

IPC分类号： H01L31/062 ,  G02F1/136 ,  G02F1/1343

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

摘要： A gate wire including a gate line and a gate electrode is formed on a substrate and a gate insulating layer is formed on the substrate. A semiconductor pattern and an etching assistant pattern are formed on the gate insulating layer and a source/drain conductor pattern and an etching assistant layer are formed on the semiconductor pattern and the etching assistant pattern. A data wire including a data line and source and drain electrodes separated from each other is formed by removing the etching assistant layer and partly removing the source/drain conductor pattern. A pixel electrode connected to the drain electrodes is formed.

摘要翻译： 在衬底上形成包括栅极线和栅电极的栅极线，并且在衬底上形成栅极绝缘层。 在栅极绝缘层上形成半导体图案和蚀刻辅助图案，并且在半导体图案和蚀刻辅助图案上形成源极/漏极导体图案和蚀刻辅助层。 通过去除蚀刻辅助层并部分地去除源极/漏极导体图案，形成包括彼此分离的数据线和源极和漏极的数据线。 形成连接到漏电极的像素电极。

公开(公告)号：US07569851B2

公开(公告)日：2009-08-04

申请号：US11541254

申请日：2006-09-29

申请人： Keun-Kyu Song ,  Tae-Young Choi

发明人： Keun-Kyu Song ,  Tae-Young Choi

IPC分类号： H01L51/10

CPC分类号： H01L27/283 ,  H01L27/1214 ,  H01L27/3244 ,  H01L51/0516 ,  H01L51/0545

摘要： An organic thin film transistor (OTFT) array panel includes a substrate, a data line formed on the substrate, a source electrode connected with the data line, a drain electrode, including a portion facing the source electrode, an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole, an organic semiconductor positioned in the opening and at least partially contacting the source electrode and the drain electrode, a gate insulator formed on the organic semiconductor, a stopper formed on the gate insulator, a gate line crossing over the data line and including a gate electrode formed on the stopper, and a pixel electrode connected to the drain electrode through the contact hole.

摘要翻译： 有机薄膜晶体管（OTFT）阵列面板包括基板，形成在基板上的数据线，与数据线连接的源电极，漏电极，包括面对源电极的部分，形成在源极上的绝缘层 电极和漏极，并具有开口和接触孔，位于开口中并且至少部分地接触源电极和漏电极的有机半导体，形成在有机半导体上的栅极绝缘体，形成在栅极绝缘体上的阻挡层 在数据线上交叉并且包括形成在该止动器上的栅极电极的栅极线以及通过接触孔与漏电极连接的像素电极。