公开(公告)号：US09269708B2

公开(公告)日：2016-02-23

申请号：US13245675

申请日：2011-09-26

Applicant: Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

Inventor： Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC: G01N27/403 ,  H01L27/088 ,  C12Q1/68 ,  H01L29/78 ,  G01N27/414

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

公开(公告)号：US08530941B2

公开(公告)日：2013-09-10

申请号：US13022678

申请日：2011-02-08

Applicant: Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

Inventor： Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC: G01N27/403

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

公开(公告)号：US08269261B2

公开(公告)日：2012-09-18

申请号：US13022694

申请日：2011-02-08

Applicant: Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

Inventor： Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC: G01N27/403

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

公开(公告)号：US20120129732A1

公开(公告)日：2012-05-24

申请号：US13019517

申请日：2011-02-02

Applicant: Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

Inventor： Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC: C40B60/12

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

公开(公告)号：US20120055811A1

公开(公告)日：2012-03-08

申请号：US13033196

申请日：2011-02-23

Applicant: JONATHAN M. ROTHBERG ,  WOLFGANG HINZ ,  KIM L. JOHNSON ,  JAMES BUSTILLO

Inventor： JONATHAN M. ROTHBERG ,  WOLFGANG HINZ ,  KIM L. JOHNSON ,  JAMES BUSTILLO

IPC: G01N27/414 ,  G01N33/50

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

公开(公告)号：US20120034607A1

公开(公告)日：2012-02-09

申请号：US13245675

申请日：2011-09-26

Applicant: Jonathan M. ROTHBERG ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

Inventor： Jonathan M. ROTHBERG ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC: C12Q1/68 ,  C12M1/34

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

Abstract translation: 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。

公开(公告)号：US20100301398A1

公开(公告)日：2010-12-02

申请号：US12475311

申请日：2009-05-29

Applicant: Jonathan M. Rothberg ,  James M. Bustillo ,  Mark J. Milgrew ,  Jonathan C. Schultz ,  David Marran ,  Todd M. Rearick ,  Kim L. Johnson

Inventor： Jonathan M. Rothberg ,  James M. Bustillo ,  Mark J. Milgrew ,  Jonathan C. Schultz ,  David Marran ,  Todd M. Rearick ,  Kim L. Johnson

IPC: H01L29/78 ,  H01L21/336

CPC classification number: G01N27/4145 ,  C12Q1/6869 ,  C12Q1/6874 ,  G01N27/27 ,  G01N27/414 ,  Y10T29/49002

Abstract: Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Abstract translation: 涉及FET阵列的方法和装置，包括用于监测化学和/或生物反应的大型FET阵列，例如核酸序列合成反应。 本文提供的一些方法涉及在核酸测序反应期间从释放的氢离子改进信号（以及信噪比）。

公开(公告)号：US20090127589A1

公开(公告)日：2009-05-21

申请号：US12002291

申请日：2007-12-14

Applicant: Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

Inventor： Jonathan M. Rothberg ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC: H01L29/772 ,  H01L21/50 ,  C12M3/00

CPC classification number: G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

公开(公告)号：US4882198A

公开(公告)日：1989-11-21

申请号：US202830

申请日：1988-06-03

Applicant: Michael D. Temple ,  Richard I. Seddon ,  Kim L. Johnson

Inventor： Michael D. Temple ,  Richard I. Seddon ,  Kim L. Johnson

IPC: C23C14/32

CPC classification number: C23C14/32

Abstract: A substrate holder is mounted within the vacuum chamber for carrying at least one substrate; an electrically conductive crucible is positioned within said vacuum chamber and is electrically insulated therefrom but has a low electrical resistance connection therebetween. The crucible is adapted to contain a preselected material for evaporation onto a substrate on the substrate holder. A high voltage electron beam source is positioned within said vacuum chamber in the vicinity of said crucible and includes a high voltage electron gun and a deflection magnet system arranged for bending electrons from said gun into said crucible for evaporating the preselected material therein, the magnet system forms a magnet field of prearranged characteristics in the region above said crucible. A low voltage, high current plasma source, including a separate plasma generating chamber is positioned relative to said vacuum chamber to produce an intense first plasma of a selected activation gas species in said plasma generating chamber for injection into said vacuum chamber. The plasma source is positioned at any convenient location relative to the crucible and the electron beam source and is electrically interconnected with the crucible for current flow therebetween. The plasma source fills the vacuum chamber with a generally distributed plasma. The distributed plasma coacts with the magnetic field above said crucible and evaporant material leaving the crucible to form an intense second plasma in the region above said crucible, thereby activating the evaporant material passing through the region toward the substrate to produce a vacuum deposited thin film having improved thin film characteristics.

Abstract translation: 衬底保持器安装在真空室内以承载至少一个衬底; 导电坩埚定位在所述真空室内并与之电绝缘，但是在它们之间具有低电阻连接。 坩埚适于容纳用于蒸发到衬底保持器上的衬底上的预选材料。 高电压电子束源位于所述坩埚附近的所述真空室内，并且包括高压电子枪和偏转磁体系统，其布置成用于将电子从所述枪弯曲到所述坩埚中，用于蒸发其中的预选材料，磁体系统 在所述坩埚上方的区域中形成预定特性的磁场。 包括单独的等离子体产生室的低电压，高电流等离子体源相对于所述真空室定位，以在所述等离子体发生室中产生用于注入所述真空室的所选激活气体种类的强烈的第一等离子体。 等离子体源位于相对于坩埚和电子束源的任何方便的位置，并且与坩埚电互连，用于其间的电流。 等离子体源以大致分布的等离子体填充真空室。 分布式等离子体与坩埚上方的磁场和离开坩埚的蒸发材料共同作用，在坩埚上方的区域中形成强烈的第二等离子体，从而使通过该区域的蒸发材料活动到衬底，以产生真空沉积的薄膜， 改善薄膜特性。

公开(公告)号：US4777908A

公开(公告)日：1988-10-18

申请号：US935292

申请日：1986-11-26

Applicant: Michael D. Temple ,  Richard I. Seddon ,  Kim L. Johnson

Inventor： Michael D. Temple ,  Richard I. Seddon ,  Kim L. Johnson

IPC: C23C14/30 ,  C23C14/32 ,  C23C14/24 ,  C23C16/50

CPC classification number: C23C14/32

Abstract: A substrate holder is mounted within the vacuum chamber for carrying at least one substrate; an electrically conductive crucible is positioned within said vacuum chamber and is electrically insulated therefrom but has a low electrical resistance connection therebetween. The crucible is adapted to contain a preselected material for evaporation onto a substrate on the substrate holder. A high voltage electron beam source is positioned within said vacuum chamber in the vicinity of said crucible and includes a high voltage electron gun and a deflection magnet system arranged for bending electrons from said gun into said crucible for evaporating the preselected material therein, the magnet system forms a magnet field of prearranged characteristics in the region above said crucible. A low voltage, high current plasma source, including a separate plasma generating chamber is positioned relative to said vacuum chamber to produce an intense first plasma of a selected activation gas species in said plasma generating chamber for injection into said vacuum chamber. The plasma source is positioned at any convenient location relative to the crucible and the electron beam source and is electrically interconnected with the crucible for current flow therebetween. The plasma source fills the vacuum chamber with a generally distributed plasma. The distributed plasma coacts with the magnetic field above said crucible and evaporant material leaving the crucible to form an intense second plasma in the region above said crucible, thereby activating the evaporant material passing through the region toward the substrate to produce a vacuum deposited thin film having improved thin film characteristics.

Abstract translation: 衬底保持器安装在真空室内以承载至少一个衬底; 导电坩埚定位在所述真空室内并与之电绝缘，但是在它们之间具有低电阻连接。 坩埚适于容纳用于蒸发到衬底保持器上的衬底上的预选材料。 高电压电子束源位于所述坩埚附近的所述真空室内，并且包括高压电子枪和偏转磁体系统，其布置成用于将电子从所述枪弯曲到所述坩埚中，用于蒸发其中的预选材料，磁体系统 在所述坩埚上方的区域中形成预定特性的磁场。 包括单独的等离子体产生室的低电压，高电流等离子体源相对于所述真空室定位，以在所述等离子体发生室中产生用于注入所述真空室的所选激活气体种类的强烈的第一等离子体。 等离子体源位于相对于坩埚和电子束源的任何方便的位置，并且与坩埚电互连，用于其间的电流。 等离子体源以大致分布的等离子体填充真空室。 分布式等离子体与坩埚上方的磁场和离开坩埚的蒸发材料共同作用，在坩埚上方的区域中形成强烈的第二等离子体，从而使通过该区域的蒸发材料活动到衬底，以产生真空沉积的薄膜， 改善薄膜特性。