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111 条记录 (耗时 0.044 秒)

    Nonvolatile semiconductor memory
    4.
    发明授权
    Nonvolatile semiconductor memory 有权
    非易失性半导体存储器

    公开(公告)号：US07376019B2

    公开(公告)日：2008-05-20

    申请号：US11378248

    申请日：2006-03-20

    申请人： Kiyokazu Hashimoto ,  Hiroshi Sugawara

    发明人： Kiyokazu Hashimoto ,  Hiroshi Sugawara

    IPC分类号： G11C16/04

    CPC分类号： G11C16/24 ,  G11C16/12

    摘要： The nonvolatile semiconductor memory includes a plurality of memory devices for storing data, a write circuit for supplying a high voltage for data writing, a plurality of selectors connected between the write circuit and the plurality of memory devices, for selecting one from the plurality of memory devices; and a control circuit for selecting one from the plurality of selectors, inputting a control voltage to a control terminal of the selected selector, and setting a write voltage for the memory device according to the control voltage.

    摘要翻译： 非易失性半导体存储器包括用于存储数据的多个存储器件，用于提供用于数据写入的高电压的写入电路，连接在写入电路和多个存储器件之间的多个选择器，用于从多个存储器中选择一个 设备; 以及控制电路，用于从多个选择器中选择一个，将控制电压输入到所选选择器的控制端，并根据控制电压设置存储器件的写入电压。

    Nonvolatile semiconductor memory
    6.
    发明申请
    Nonvolatile semiconductor memory 有权
    非易失性半导体存储器

    公开(公告)号：US20060221699A1

    公开(公告)日：2006-10-05

    申请号：US11378248

    申请日：2006-03-20

    申请人： Kiyokazu Hashimoto ,  Hiroshi Sugawara

    发明人： Kiyokazu Hashimoto ,  Hiroshi Sugawara

    IPC分类号： G11C16/04

    CPC分类号： G11C16/24 ,  G11C16/12

    摘要： The nonvolatile semiconductor memory includes a plurality of memory devices for storing data, a write circuit for supplying a high voltage for data writing, a plurality of selectors connected between the write circuit and the plurality of memory devices, for selecting one from the plurality of memory devices; and a control circuit for selecting one from the plurality of selectors, inputting a control voltage to a control terminal of the selected selector, and setting a write voltage for the memory device according to the control voltage.

    摘要翻译： 非易失性半导体存储器包括用于存储数据的多个存储器件，用于提供用于数据写入的高电压的写入电路，连接在写入电路和多个存储器件之间的多个选择器，用于从多个存储器中选择一个 设备; 以及控制电路，用于从多个选择器中选择一个，将控制电压输入到所选选择器的控制端，并根据控制电压设置存储器件的写入电压。

    Optical compensatory sheet comprising optically uniaxial or biaxial transparent stretched film
    8.
    发明授权
    Optical compensatory sheet comprising optically uniaxial or biaxial transparent stretched film 有权

    公开(公告)号：US06657690B2

    公开(公告)日：2003-12-02

    申请号：US10025815

    申请日：2001-12-26

    申请人： Kiyokazu Hashimoto

    发明人： Kiyokazu Hashimoto

    IPC分类号： G02F11335

    CPC分类号： G02F1/133634 ,  G02F1/1393

    摘要： An optical compensatory sheet comprises an optically uniaxial or optically biaxial transparent stretched film. A Re retardation value in plane of the transparent stretched film measured at 550 nm fluctuates, in any direction parallel to the transparent stretched film surface, within the range of ±5 nm based on the average Re value in each direction. A Rth retardation value along a thickness direction of the transparent stretched film fluctuates, in any direction parallel to the transparent stretched film surface, within the range of ±10 nm based on the average Rth value in each direction.

    Semiconductor memory device having multilevel memory cell and method of manufacturing the same
    9.
    发明授权
    Semiconductor memory device having multilevel memory cell and method of manufacturing the same 失效
    具有多层存储单元的半导体存储器件及其制造方法

    公开(公告)号：US06479874B2

    公开(公告)日：2002-11-12

    申请号：US09161510

    申请日：1998-09-28

    申请人： Kenji Hibino ,  Masao Kunitou ,  Kazuyuki Yamasaki ,  Tetsuji Togami ,  Hironori Sakamoto ,  Kiyokazu Hashimoto

    发明人： Kenji Hibino ,  Masao Kunitou ,  Kazuyuki Yamasaki ,  Tetsuji Togami ,  Hironori Sakamoto ,  Kiyokazu Hashimoto

    IPC分类号： H01L2976

    CPC分类号： H01L27/112 ,  G11C11/5692 ,  H01L27/11253

    摘要： A semiconductor ROM device which enables to obtain a reference current which can securely distinguish data stored in a memory cell in a multilevel mask ROM for storing multilevel data of three or more levels per memory cell. The device comprises a memory cell in which a threshold voltage is set up corresponding to an amount of ions injected to a channel region of a cell transistor and multilevel data of three or more levels are stored, a reference cell for generating the reference current for comparing with a current read out from the memory cell, and dummy cells disposed adjacent to the reference cell. In the channel region of the reference cell and the channel region of the dummy cell, ions are injected simultaneously to set up the equal threshold voltages both in the reference cell and the dummy cell.

    摘要翻译： 一种半导体ROM器件，其能够获得可以安全地区分存储在存储单元中的数据的参考电流，所述多级屏蔽ROM用于存储每个存储单元的三级或更多级的多级数据。 该装置包括存储单元，其中相应于注入到单元晶体管的沟道区域的离子的量设置阈值电压，并存储三个或多个电平的多电平数据，用于产生用于比较的参考电流的参考单元 从存储器单元读出电流，以及与参考单元相邻设置的虚拟单元。 在参考单元的沟道区域和虚拟单元的沟道区域中，同时注入离子以在参考单元和虚拟单元中建立相等的阈值电压。