公开(公告)号：US06434496B1

公开(公告)日：2002-08-13

申请号：US09472411

申请日：1999-12-27

申请人： Jie Dong ,  Koh Matsumoto

发明人： Jie Dong ,  Koh Matsumoto

IPC分类号： G01R2316

CPC分类号： G01J3/28 ,  G01J3/453

摘要： The present invention provides a method and an apparatus for measuring a light absorption spectra which can remove a noise included in a measurement signal, and achieve a high sensitivity of a laser spectral in a good S/N ratio. According to the present invention, there is provided a method for measuring a light absorption spectra comprising the steps of: (i) conducting a Fourier transform of an absorption spectra measured by using a laser beam source; (ii) disassembling in a Fourier space the Fourier transformed signal into a signal resulted from a periodic vibration component and a signal resulted from a molecular absorption spectra; (iii) removing the Fourier component resulted from said periodic vibration component in a Fourier space; and (iv) conducting an inverse Fourier transform on the signal from which said periodic vibration component is removed, whereby reproducing an absorption spectra in a real space.

摘要翻译： 本发明提供一种用于测量能够消除测量信号中包含的噪声并且以良好S / N比实现激光光谱的高灵敏度的光吸收光谱的方法和装置。 根据本发明，提供了一种测量光吸收光谱的方法，包括以下步骤：（i）对通过使用激光束源测量的吸收光谱进行傅里叶变换; （ii）在傅立叶空间中将傅里叶变换信号分解为由周期性振动分量和由分子吸收光谱产生的信号产生的信号; （iii）在傅立叶空间中去除由所述周期性振动分量产生的傅立叶分量; 和（iv）对去除所述周期性振动分量的信号进行傅里叶逆变换，从而在真实空间中再现吸收光谱。

公开(公告)号：US06375911B1

公开(公告)日：2002-04-23

申请号：US09355937

申请日：1999-08-13

申请人： Tadahiro Ohmi ,  Yoshio Ishihara ,  Koh Matsumoto ,  Tetsuya Kimijima

发明人： Tadahiro Ohmi ,  Yoshio Ishihara ,  Koh Matsumoto ,  Tetsuya Kimijima

IPC分类号： B01D5386

CPC分类号： B01D53/8659

摘要： A process and an apparatus for treating an exhaust gas, in which a raw gas and high-boiling intermediate products contained in the exhaust gas let out from a CVD system employing a silicon-containing gas is brought into contact with a transition metal such as nickel or a silicide of such transition metals to decompose or convert them into stable halides, followed by detoxication treatment of the harmful components contained in the exhaust gas.

摘要翻译： 一种用于处理废气的方法和装置，其中使含有含硅气体的CVD系统排出的废气中含有的原料气体和高沸点中间产物与诸如镍的过渡金属接触 或这种过渡金属的硅化物分解或将其转化成稳定的卤化物，然后对废气中包含的有害成分进行解毒处理。

公开(公告)号：US06190457B1

公开(公告)日：2001-02-20

申请号：US08952517

申请日：1997-11-21

申请人： Takayuki Arai ,  Junichi Hidaka ,  Koh Matsumoto ,  Nakao Akutsu ,  Kazuhiro Aoyama ,  Yoshiaki Inaishi ,  Ichitaro Waki

发明人： Takayuki Arai ,  Junichi Hidaka ,  Koh Matsumoto ,  Nakao Akutsu ,  Kazuhiro Aoyama ,  Yoshiaki Inaishi ,  Ichitaro Waki

IPC分类号： C23C1600

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42

摘要： Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11. The CVD system contains two separators 18, 19 disposed in the reactor 10 on the upstream side of the substrate mounting section to be parallel to the surface of the substrate 11 so as to define in the reactor three parallel layers of passages consisting of a first passage 20, a second passage 21 and a third passage 22; a first CVD gas introducing pipe 23 communicating to the first passage 20; a second CVD gas introducing pipe 24 communicating to the second passage 21; and a deposition accelerating gas introducing pipe 25 communicating to the third passage 22.

摘要翻译： 提供一种可以生长具有最少缺陷并且具有高源气体利用效率和提高的生产率的两种或更多种组分的优异的化合物半导体薄膜的CVD系统和CVD方法。 根据CVD系统和CVD工艺，将平行于放置在反应器10中的基板11的表面平行地引入至少两种源气体，以在基板的表面上生长两个或更多个部件的化合物半导体薄膜 CVD系统包含设置在反应器10中的两个分离器18,19，其位于衬底安装部分的上游侧，以平行于衬底11的表面，以便在反应器中限定三个平行的通道层， 第一通道20，第二通道21和第三通道22; 与第一通道20连通的第一CVD气体导入管23; 与第二通道21连通的第二CVD气体导入管24; 以及与第三通路22连通的沉积加速气体导入管25。

公开(公告)号：US5821537A

公开(公告)日：1998-10-13

申请号：US887262

申请日：1997-07-02

申请人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

发明人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

IPC分类号： G01J3/433 ,  G01N21/39 ,  G01N21/35

CPC分类号： G01N21/39 ,  G01J3/433 ,  G01N21/3504 ,  G01N2021/399 ,  G01N21/3554

摘要： A device and method for measuring an impurity in a trace concentration in a gas to be measured by infrared spectroscopic analysis employing a diode laser are provided. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by a pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The device and method are particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.

摘要翻译： 提供了一种通过使用二极管激光的红外光谱分析来测量要测量的气体中的微量浓度的杂质的装置和方法。 为了以高灵敏度和高精度进行分析，将待测量的气体引入样品池5中并通过泵16置于低压状态。来自杂质的强吸收峰的红外光 可以从二极管激光器1振荡，并且通过使红外线通过单独填充有杂质的样品池5和参考单元8来测量衍生吸收光谱。 比较待测气体的光谱和单独的杂质的光谱，通过确认源自杂质的多个吸收峰来鉴定杂质。 然后从最强峰的吸收强度进行杂质测定。 在气体杂质的分子在待测量的气体中聚集的情况下，通过照射光子能量为0.5eV以上的光来解离簇，进行分析。 该装置和方法特别适用于对用作半导体制造材料的气体中存在的微量杂质进行分析。

公开(公告)号：US5766321A

公开(公告)日：1998-06-16

申请号：US338547

申请日：1994-12-12

申请人： Yoshio Ishihara ,  Hiroshi Yamazaki ,  Sumiyo Yamane ,  Koh Matsumoto

发明人： Yoshio Ishihara ,  Hiroshi Yamazaki ,  Sumiyo Yamane ,  Koh Matsumoto

IPC分类号： B01D19/00 ,  C02F1/20

CPC分类号： C02F1/20 ,  B01D19/0005

摘要： Disclosed is a dissolved oxygen reducing apparatus which enables supplying a liquid containing very small amounts of dissolved oxygen. The dissolved oxygen reducing apparatus includes a bubbling vessel (24) having a liquid charge inlet (21), a liquid discharge outlet (22) and an inert gas discharge port (23), an inert gas sparger (25) provided within the bubbling vessel (24), and a liquid discharge pipe (26) connected to the liquid discharge outlet (22). The bubbling vessel (24) and the liquid discharge pipe (26) have a coefficient of oxygen permeability of not higher than 10.sup.-9 cc.multidot.cm/cm.sup.2 .multidot.sec.multidot.atm at 25.degree. C.

摘要翻译： PCT No.PCT / JP94 / 00601 Sec。 371日期1994年12月12日第 102（e）日期1994年12月12日PCT 1994年4月11日PCT PCT。 第WO94 / 23816号公报 日期1994年10月27日公开是一种溶解氧还原装置，其能够供应含有非常少量溶解氧的液体。 溶解氧还原装置包括具有液体进料口（21），液体排出口（22）和惰性气体排出口（23）的发泡容器（24），设置在发泡容器内的惰性气体分布器（25） （24）和连接到液体排出口（22）的液体排出管（26）。 发泡容器（24）和液体排出管（26）的氧透过系数在25℃下不高于10-9ccxcm / cm2×secxatm

公开(公告)号：US20120160170A1

公开(公告)日：2012-06-28

申请号：US13383876

申请日：2010-07-12

申请人： Akira Yamaguchi ,  Koh Matsumoto ,  Kosuke Uchiyama

发明人： Akira Yamaguchi ,  Koh Matsumoto ,  Kosuke Uchiyama

IPC分类号： C23C16/455

CPC分类号： C23C16/4586 ,  C23C16/45508

摘要： Disclosed is a rotation/revolution type vapor phase growth apparatus that can maintain constant flow rates of a purge gas and a raw material gas when a raw material gas introducing direction is set to be the same as a susceptor rotation introducing direction. Inside a hollow drive shaft 12 supporting and rotating a disk-shaped susceptor 13, a raw material gas supply tube 20 is coaxially disposed, and between the hollow drive shaft and the raw material gas supply tube, a purge gas flow path 21 is formed. Additionally, in a purge gas introducing nozzle introducing a purge gas in an outer circumferential direction of a flow channel 18 from the purge gas flow path, a gas introducing path 19c is formed in a direction parallel to an upper surface of the susceptor in such a manner as to make a vertical dimension of the gas introducing path constant.

摘要翻译： 公开了一种旋转/旋转式气相生长装置，当原料气体引入方向设定为与基座旋转导入方向相同时，能够保持吹扫气体和原料气体的恒定流量。 在支撑并旋转圆盘形基座13的中空驱动轴12内同时设置有原料气体供给管20，在中空驱动轴与原料气体供给管之间形成吹扫气体流路21。 另外，在吹扫气体导入喷嘴中，从净化气体流路在流路18的外周方向引入吹扫气体的气体导入路19c形成在与基座的上表面平行的方向上 使气体导入路径的垂直尺寸恒定的方式。

公开(公告)号：US06800855B1

公开(公告)日：2004-10-05

申请号：US09472585

申请日：1999-12-27

申请人： Jie Dong ,  Katsumasa Suzuki ,  Hiroshi Masusaki ,  Koh Matsumoto

发明人： Jie Dong ,  Katsumasa Suzuki ,  Hiroshi Masusaki ,  Koh Matsumoto

IPC分类号： G01J502

CPC分类号： G01N21/39 ,  G01N21/3504

摘要： The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W1, W2) of well-known absorption spectra in wavelength bands close to the wavelengths (w1, w2) of the absorption spectra of the isotopes.

摘要翻译： 本发明提供了一种用于分析同位素的光谱方法，其使得可以简化测量系统并且以高精度和灵敏度鉴定同位素并进行定量分析。 用于分析同位素的分光方法使用具有2000nm波长带的波长区域的半导体激光束作为同位素吸收光谱的波长的光源。 参考气体用于鉴定同位素，其中气体包含具有接近于同位素吸收光谱的波长（w1，w2）的波长带的众所周知的吸收光谱的两个波长（W1，W2）的对照组分。

公开(公告)号：US06636316B1

公开(公告)日：2003-10-21

申请号：US09472251

申请日：1999-12-27

申请人： Koh Matsumoto ,  Jie Dong ,  Hiroshi Masusaki ,  Katsumasa Suzuki

发明人： Koh Matsumoto ,  Jie Dong ,  Hiroshi Masusaki ,  Katsumasa Suzuki

IPC分类号： G01N2100

CPC分类号： G01N21/39 ,  G01N21/3504

摘要： The present invention provides a spectroscopic method for analysing objects in a gas comprising a main ingredient and the objects, both of which the absorption spectra exist in the same wavelength range, with high precision and sensitivity by using a compact and simple single cell system. In accordance with an aspect of the present invention, there is disclosed a spectroscopic method for analysing objects in a sample gas using a laser beam comprising: i) a step of splitting a laser beam into a first laser beam and a second laser beam; ii) a step of transmitting said first laser beam into a sample cell where a sample gas is introduced, and measuring an intensity of a spectrum of said transmitted first laser beam; iii) a step, being performed while performing said step ii), of transmitting said second laser beam into a reference cell where a reference gas is introduced, and measuring an intensity of a spectrum of said transmitted second laser beam, wherein said reference gas comprises an ingredient having at least two spectral lines of which wavelengths in an absorption spectrum of said reference gas are already known; and iv) a step of identifying a wavelength of objects to be measured in said sample gas by comparing said spectrum of sample gas with said spectrum of reference gas using said at least two spectral lines of said reference gas as reference wavelengths.

摘要翻译： 本发明提供一种用于分析气体中的物体的分光方法，其中包括主要成分和物体，两者的吸收光谱都以相同的波长范围存在，通过使用紧凑且简单的单电池系统具有高精度和灵敏度。 根据本发明的一个方面，公开了一种用于使用激光束分析样品气体中的物体的分光方法，包括：i）将激光束分裂成第一激光束和第二激光束的步骤; ii）将所述第一激光束发射到导入样品气体的样品池中并测量所述透射的第一激光束的光谱强度的步骤; iii）在执行所述步骤ii）期间执行将所述第二激光束发射到引入参考气体的参考单元并测量所述透射的第二激光束的光谱强度的步骤，其中所述参考气体包括 具有至少两条光谱线的成分，其中所述参考气体的吸收光谱中的波长已知; 以及iv）通过使用所述参考气体的所述至少两个谱线作为参考波长，通过将所述样本气体的频谱与所述参考气体的频谱进行比较来识别所述样品气体中待测物体的波长的步骤。

公开(公告)号：US5703365A

公开(公告)日：1997-12-30

申请号：US545580

申请日：1995-11-20

申请人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

发明人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

IPC分类号： G01J3/433 ,  G01N21/39 ,  G01N21/35

CPC分类号： G01N21/39 ,  G01J3/433 ,  G01N21/3504 ,  G01N2021/399 ,  G01N21/3554

摘要： The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by means of pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The present invention is particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.

摘要翻译： PCT No.PCT / JP95 / 00523 Sec。 371日期：1995年11月20日 102（e）1995年11月20日日期PCT 1995年3月22日PCT公布。 公开号WO95 / 26497 日期：1995年10月5日本发明涉及通过使用二极管激光器的红外光谱分析来测量要测量的气体中的微量浓度的杂质的装置和方法。 为了以高灵敏度和高精度进行分析，将待测量的气体引入样品池5中，并通过泵16置于低压状态。来自波长区域的红外光来自 可以获得从二极管激光器1振荡的杂质，并且通过使红外线通过单独填充有杂质的样品池5和参考电池8来测量衍生吸收光谱。 比较待测气体的光谱和单独的杂质的光谱，通过确认源自杂质的多个吸收峰来鉴定杂质。 然后从最强峰的吸收强度进行杂质测定。 在气体杂质的分子在待测量的气体中聚集的情况下，通过照射光子能量为0.5eV以上的光来解离簇，进行分析。 本发明特别适用于对用作半导体制造材料的气体中存在的微量杂质进行分析。