ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME
    4.
    发明申请
    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME 有权
    化学敏感性或辐射敏感性树脂组合物,耐蚀膜,图案形成方法,制备电子器件的方法和使用其的电子器件

    公开(公告)号:US20130078426A1

    公开(公告)日:2013-03-28

    申请号:US13610271

    申请日:2012-09-11

    IPC分类号: G03F7/075 B32B3/30 G03F7/20

    摘要: An actinic ray-sensitive or radiation-sensitive resin composition capable of forming a hole pattern which has an ultrafine pore diameter (for example, 60 nm or less) and has an excellent cross-sectional shape with excellent local pattern dimensional uniformity; and a resist film, a pattern forming method, a method for preparing an electronic device, and an electronic device, each using the same, are provided.The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin containing 30 mol % or more of a repeating unit (a) represented by the following general formula (I) based on all the repeating units; (B) a compound capable of generating an acid upon irradiation of actinic rays or radiation; and (G) a compound having at least one of a fluorine atom and a silicon atom, and further having basicity or being capable of increasing the basicity by an action of an acid:

    摘要翻译: 能够形成具有超细孔径(例如60nm以下)的孔图案并且具有优异的局部图案尺寸均匀性的截面形状优异的光化射线敏感或辐射敏感性树脂组合物; 并且提供了各自使用它们的抗蚀剂膜,图案形成方法,制备电子设备的方法和电子设备。 光化射线敏感性或辐射敏感性树脂组合物包含(P)基于所有重复单元含有30mol%以上由以下通式(I)表示的重复单元(a)的树脂的树脂; (B)能够在光化射线或辐射照射时能产生酸的化合物; 和(G)具有氟原子和硅原子中的至少一个的化合物,并且还具有碱性或能够通过酸的作用增加碱度: