公开(公告)号：US08580680B2

公开(公告)日：2013-11-12

申请号：US12915917

申请日：2010-10-29

申请人： Tuung Luoh ,  Sheng Hui Hsieh ,  Ricky Huang ,  Chin-Ta Su ,  Tahone Yang ,  Kuang-Chao Chen

发明人： Tuung Luoh ,  Sheng Hui Hsieh ,  Ricky Huang ,  Chin-Ta Su ,  Tahone Yang ,  Kuang-Chao Chen

IPC分类号： H01L21/44

CPC分类号： H01L29/66507 ,  H01L21/28052 ,  H01L21/28518

摘要： Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate, the metal layer comprising metal capable of reacting with external silicon-based portions of the features to form a metal silicide. In addition, such a method may also include depositing a cap layer on the metal layer deposited on and between the plurality of raised silicon-based features, wherein a thickness of the cap layer on the metal layer between the raised features is greater than or equal to a thickness of the cap layer on the metal layer on the raised features. Furthermore, such a method may also include annealing the structure to cause portions of the metal layer to react with portions of the external silicon-based portions of the features to form metal silicide pads on and between the raised features.

摘要翻译： 公开了在半导体器件上形成金属硅化物接触焊盘的技术，并且在一个示例性实施例中，一种方法可以包括在形成在半导体衬底上的多个凸起的硅基特征之间和之间沉积金属层，所述金属层包括金属 与特征的外部硅基部分反应以形成金属硅化物。 此外，这种方法还可以包括在沉积在多个凸起的硅基特征之间和之间的金属层上沉积覆盖层，其中在凸起特征之间的金属层上的覆盖层的厚度大于或等于 到金属层上的盖层的厚度在凸起的特征​​上。 此外，这种方法还可以包括对结构进行退火以使金属层的一部分与特征的外部硅基部分的部分反应，以在凸起特征之间和之间形成金属硅化物焊盘。

公开(公告)号：US20130185864A1

公开(公告)日：2013-07-25

申请号：US13737109

申请日：2013-01-09

申请人： CHENG-HSIANG HUANG ,  KUANG-CHAO HUANG

发明人： CHENG-HSIANG HUANG ,  KUANG-CHAO HUANG

IPC分类号： A61H33/00

CPC分类号： A61H33/0087 ,  A61H33/02 ,  A61H33/6036

摘要： The invention relates to a multifunctional spa device. It is mainly that an inlet of a pump controlled by a circuit is additionally connected to a vent pipe, an outlet of the pump is connected to a jet, and the pump sucks a water flow through an intake pipe while air is simultaneously sucked through the vent pipe to be mixed with the water flow in the pump. An outlet disk is configured in the jet, and pores are distributed on an outer circumference of the outlet disk. With the jet inside-out to transmit the air-mixing water flow, the air-mixing water flow is further compressed and released through the pores, thus to output water flows or the water columns carried with ultramicro bubbles.

摘要翻译： 本发明涉及一种多功能水疗装置。 主要是由电路控制的泵的入口另外连接到通风管，泵的出口连接到射流，并且泵吸入通过进气管的水流，同时空气同时被吸入 排气管与泵中的水流混合。 出口盘配置在射流中，孔分布在出口盘的外圆周上。 利用喷射内向外透射空气混合水流，空气混合水流被进一步压缩并通过孔释放，从而输出水流或带有超微泡的水柱。

公开(公告)号：US20120190198A1

公开(公告)日：2012-07-26

申请号：US13012506

申请日：2011-01-24

申请人： Tuung Luoh ,  Ling-Wu Yang ,  Ta-Hone Yang ,  Kuang-Chao Chen

发明人： Tuung Luoh ,  Ling-Wu Yang ,  Ta-Hone Yang ,  Kuang-Chao Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/02068 ,  H01L21/0217 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/76834

摘要： Described is a method for improving the flatness of a layer deposited on a doped polycrystalline layer, which includes reducing the grain size of the polycrystalline layer to decrease the out-diffusion amount of the dopant from the polycrystalline layer, and/or reducing the amount of the out-diffusing dopant on the surface of the polycrystalline layer.

摘要翻译： 描述了一种用于提高沉积在掺杂多晶层上的层的平坦度的方法，其包括减小多晶层的晶粒尺寸以减少掺杂剂从多晶层的扩散量，和/或减少 多晶层表面上的扩散扩散掺杂剂。

公开(公告)号：US20120104516A1

公开(公告)日：2012-05-03

申请号：US12915917

申请日：2010-10-29

申请人： Tuung Luoh ,  Sheng Hui Hsieh ,  Ricky Huang ,  Chin-Ta Su ,  Tahone Yang ,  Kuang-Chao Chen

发明人： Tuung Luoh ,  Sheng Hui Hsieh ,  Ricky Huang ,  Chin-Ta Su ,  Tahone Yang ,  Kuang-Chao Chen

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/66507 ,  H01L21/28052 ,  H01L21/28518

摘要： Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate, the metal layer comprising metal capable of reacting with external silicon-based portions of the features to form a metal silicide. In addition, such a method may also include depositing a cap layer on the metal layer deposited on and between the plurality of raised silicon-based features, wherein a thickness of the cap layer on the metal layer between the raised features is greater than or equal to a thickness of the cap layer on the metal layer on the raised features. Furthermore, such a method may also include annealing the structure to cause portions of the metal layer to react with portions of the external silicon-based portions of the features to form metal silicide pads on and between the raised features.

摘要翻译： 公开了在半导体器件上形成金属硅化物接触焊盘的技术，并且在一个示例性实施例中，一种方法可以包括在形成在半导体衬底上的多个凸起的硅基特征之间和之间沉积金属层，所述金属层包括金属 与特征的外部硅基部分反应以形成金属硅化物。 此外，这种方法还可以包括在沉积在多个凸起的硅基特征之间和之间的金属层上沉积覆盖层，其中在凸起特征之间的金属层上的覆盖层的厚度大于或等于 到金属层上的盖层的厚度在凸起的特征​​上。 此外，这种方法还可以包括对结构进行退火以使金属层的一部分与特征的外部硅基部分的部分反应，以在凸起特征之间和之间形成金属硅化物焊盘。

公开(公告)号：US08153495B2

公开(公告)日：2012-04-10

申请号：US12261816

申请日：2008-10-30

申请人： Kuang-Chao Yeh ,  Wen-Bin Hsu

发明人： Kuang-Chao Yeh ,  Wen-Bin Hsu

IPC分类号： H01L21/331

CPC分类号： H01L29/66757 ,  H01L29/4908

摘要： A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, then the polycrystalline film is ions implanted, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.

摘要翻译： 形成在基板上的薄膜晶体管（TFT）包括多晶膜，栅极绝缘体，供氢膜和栅电极。 在基板上形成多晶膜。 多晶膜的两侧用作半导体器件的源极和漏极，并且多晶层的中心区域用作沟道。 栅极绝缘体形成在多晶膜上，然后多晶膜被注入离子，并且在栅极绝缘体上形成供氢膜。 栅电极形成在通道上方的供氢膜上。 氢供应膜向多晶膜，特别是通道提供氢，以将不饱和键转化为通道中的氢键，以避免不饱和键降低通道的载流子效率。

公开(公告)号：US20120000423A1

公开(公告)日：2012-01-05

申请号：US13229347

申请日：2011-09-09

申请人： Tuung Luoh ,  Chin-Ta Su ,  Ta-Hung Yang ,  Kuang-Chao Chen ,  Shing-Ann Luo

发明人： Tuung Luoh ,  Chin-Ta Su ,  Ta-Hung Yang ,  Kuang-Chao Chen ,  Shing-Ann Luo

IPC分类号： C23C16/50

CPC分类号： H01L21/31608 ,  C23C16/0209 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76224

摘要： An HDP-CVD system is described, including an HDP-CVD chamber for depositing a material on a wafer, and a pre-heating chamber disposed outside of the HDP-CVD chamber to pre-heat the wafer, before the wafer is loaded in the HDP-CVD chamber, to a temperature higher than room temperature and required in the deposition step to be conducted in the HDP-CVD chamber. The pre-heating chamber is equipped with a heating lamp for the pre-heating. The wafer has been formed with a trench before being pre-heated.

摘要翻译： 描述了一种HDP-CVD系统，其包括用于在晶片上沉积材料的HDP-CVD室和设置在HDP-CVD室外部的预热室，以在晶片装载到晶片之前预热晶片 HDP-CVD室至高于室温的温度，并且在沉积步骤中需要在HDP-CVD室中进行。 预热室配备有用于预热的加热灯。 在预加热之前，晶片已经形成有沟槽。

公开(公告)号：US08067292B2

公开(公告)日：2011-11-29

申请号：US12343633

申请日：2008-12-24

申请人： Ming-Da Cheng ,  Chin-Tsan Yeh ,  Tuung Luoh ,  Chin-Ta Su ,  Ta-Hung Yang ,  Kuang-Chao Chen

发明人： Ming-Da Cheng ,  Chin-Tsan Yeh ,  Tuung Luoh ,  Chin-Ta Su ,  Ta-Hung Yang ,  Kuang-Chao Chen

IPC分类号： H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/76205

摘要： A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the dielectric material; (d) removing the dielectric material over the base by performing a chemical mechanical polishing (CMP) process until a part of the stop layer is exposed so as to form a dielectric layer in the recess; and (e) removing a part of the stop layer, wherein the another part of the stop layer and the dielectric layer filled in the recess constitute the isolation structure.

摘要翻译： 一种形成隔离结构的方法，包括：（a）提供具有凹部的基部; （b）在基座和凹槽中形成停止层; （c）在所述阻挡层上形成电介质材料，以允许所述凹部的其余部分填充所述电介质材料; （d）通过进行化学机械抛光（CMP）工艺在基底上去除电介质材料，直到一部分停止层被暴露以在凹槽中形成电介质层; 和（e）去除所述阻挡层的一部分，其中所述阻挡层的另一部分和填充在所述凹部中的所述电介质层构成所述隔离结构。

公开(公告)号：US20110104881A1

公开(公告)日：2011-05-05

申请号：US12611614

申请日：2009-11-03

申请人： Hong-Ji Lee ,  Nan-Tsu Lian ,  Kuang-Chao Chen

发明人： Hong-Ji Lee ,  Nan-Tsu Lian ,  Kuang-Chao Chen

IPC分类号： H01L21/28

CPC分类号： H01L21/28247 ,  H01L21/28282 ,  H01L27/11568

摘要： A method of fabricating a memory device includes providing a substrate having an insulating layer, forming first, second, and third conductive layers on the insulating layer, forming a mask on the third conductive layer, etching through the third conductive layer and a first portion thickness of the second conductive layer using the mask to provide an etched sidewall portions of the third conductive layer and an etched upper surface of the second polysilicon layer, and forming a liner layer along the etched sidewall portions and the etched upper surface.

摘要翻译： 一种制造存储器件的方法包括提供具有绝缘层的衬底，在绝缘层上形成第一，第二和第三导电层，在第三导电层上形成掩模，蚀刻通过第三导电层和第一部分厚度 使用所述掩模提供所述第三导电层的蚀刻侧壁部分和所述第二多晶硅层的蚀刻的上表面，以及沿着蚀刻的侧壁部分和所蚀刻的上表面形成衬垫层。

公开(公告)号：US07894888B2

公开(公告)日：2011-02-22

申请号：US12236558

申请日：2008-09-24

申请人： Hsiao-Lung Chan ,  Pei-Kuang Chao ,  Jia-Chen Jheng

发明人： Hsiao-Lung Chan ,  Pei-Kuang Chao ,  Jia-Chen Jheng

IPC分类号： A61B5/04

CPC分类号： A61B5/0404 ,  A61B5/0006 ,  A61B5/04325 ,  A61B5/681 ,  A61B2560/0468 ,  A61B2560/0475 ,  G06F19/00

摘要： A wristwatch worn by a user for measuring a three-lead ECG includes three electrodes placed separately on the front, either side, and back or strap thereof. The wristwatch further includes an electrode panel having the electrode on the front or either side of the watch, sensing elements, pressure, infrared or impedance detectors, and circuits. The electrode panel is capable of sensing the contact or press of fingers to trigger the ECG measuring. While the electrode in the back-side of the watch contacts the hand wearing the watch, the electrode and electrode panel on the front or either side of the watch are pressed by fingers from the other hand, and the electrode in the strap contacts the abdomen or left leg simultaneously. Thus, a three-lead ECG can be measured. ECG data can be transmitted to a personal or hospital computer by wireless networks or flash memory.

摘要翻译： 由用户测量三导联ECG的手表包括三个电极，分别放置在前面，其侧面和背面或背带上。 手表还包括电极板，其电极位于手表的前侧或两侧，感测元件，压力，红外线或阻抗检测器以及电路。 电极面板能够感测触摸或手指按压以触发ECG测量。 当手表背面的电极与手表接触时，手表的前面或两侧的电极和电极面板被另一只手按压，带子中的电极接触到腹部 或左腿同时。 因此，可以测量三导联ECG。 ECG数据可以通过无线网络或闪存传输到个人或医院的计算机。

公开(公告)号：US20100076331A1

公开(公告)日：2010-03-25

申请号：US12236558

申请日：2008-09-24

申请人： Hsiao-Lung Chan ,  Pei-Kuang Chao ,  Jia-Chen Jheng

发明人： Hsiao-Lung Chan ,  Pei-Kuang Chao ,  Jia-Chen Jheng

IPC分类号： A61B5/0404

CPC分类号： A61B5/0404 ,  A61B5/0006 ,  A61B5/04325 ,  A61B5/681 ,  A61B2560/0468 ,  A61B2560/0475 ,  G06F19/00

摘要： A wristwatch worn by a user for measuring three-lead ECG is disclosed. The wristwatch includes three electrodes placed separately on the front, either side, and back or strap thereof. The wristwatch further includes an electrode panel having the electrode on the front or either side of the watch, sensing elements, pressure, infrared or impedance detectors, and circuits. The electrode panel is capable of sensing the contact or press of fingers to trigger ECG measuring. While the electrode in the back-side of the watch contacts the hand wearing the watch, the electrode and electrode panel on the front or either side of the watch are pressed by fingers from the other hand and the electrode in the strap contacts abdomen or left leg simultaneously, three-lead ECG can be measured. ECG data can be transmitted to a personal or hospital computer by wireless networks or flash memory.

摘要翻译： 公开了一种用于测量三导联ECG的用户佩戴的手表。 手表包括三个电极，分别放置在前面，其背面或背面上。 手表还包括电极板，其电极位于手表的前侧或两侧，感测元件，压力，红外线或阻抗检测器以及电路。 电极面板能够感测触摸或按压手指以触发ECG测量。 手表背面的电极与手表接触时，手表的前面或两侧的电极和电极面板被手指按压，手带上的电极接触到腹部或左侧 腿同时，可以测量三导联心电图。 ECG数据可以通过无线网络或闪存传输到个人或医院的计算机。