公开(公告)号：US06618154B2

公开(公告)日：2003-09-09

申请号：US09846331

申请日：2001-05-02

申请人： Horst Engel ,  Hakon Mikkelsen ,  Lambert Danner ,  Matthias Slodowski ,  Kuno Backhaus ,  Joachim Wienecke

发明人： Horst Engel ,  Hakon Mikkelsen ,  Lambert Danner ,  Matthias Slodowski ,  Kuno Backhaus ,  Joachim Wienecke

IPC分类号： G01B902

CPC分类号： G01B11/0625

摘要： The invention refers to an optical measurement arrangement, in particular for layer thickness measurement and for ascertaining optical material properties such as refractive index, extinction factor, etc. of a specimen (P), having an illumination device (1) for emitting a measurement light beam (6), a beam splitter (8) for dividing the measurement light beam (6) into a specimen light beam (10) and a reference light beam (9), a measurement objective for directing the specimen light beam (10) onto a measurement location (M) on the surface of the specimen (P) and for acquiring the light reflected from the measurement location (M), and an analysis device (11) into which the reference light beam (9) and the specimen light beam (10) reflected from the specimen (P) are coupled in order to obtain information about the specimen (P), in particular about layer thicknesses present thereon. Light-guiding devices (23, 25) having a plurality of light-guiding fibers are provided for coupling the specimen light beam (10) and the reference light beam (9) into the analysis device (11). The result is to create a compact optical measurement arrangement that can be flexibly set up and is insensitive to disturbance, which is suitable in particular for automatic monitoring of continuous production processes, in particular in semiconductor chip manufacture.

公开(公告)号：US06456373B1

公开(公告)日：2002-09-24

申请号：US09705931

申请日：2000-11-06

申请人： Joachim Wienecke ,  Kuno Backhaus ,  Detlef Wolter ,  Matthias Slodowski ,  Horst-Dieter Jaritz

发明人： Joachim Wienecke ,  Kuno Backhaus ,  Detlef Wolter ,  Matthias Slodowski ,  Horst-Dieter Jaritz

IPC分类号： G01J142

CPC分类号： H05B37/03

摘要： In a method for monitoring the measurement light emitted from an illumination apparatus for an optical measuring instrument, a continuous sensing of measurement light parameters is performed. The sensed measurement light parameters are compared to predefined setpoints. Any deviation from the predefined parameter ranges associated with the setpoints is signaled. This signal is used to initiate a lamp exchange on the illumination apparatus, which has multiple lamps that can be selectively switched on and off individually or in groups. Also described is a corresponding illumination apparatus that preferably performs a lamp exchange automatically. The result is to identify a point in time for a lamp change that is optimal with regard to measurement accuracy and the longest possible utilization of the lamps, so that a measurement light quality that remains consistent during continuous operation can reliably be maintained within predefined tolerance ranges.

摘要翻译： 在用于监测从光学测量仪器的照明装置发射的测量光的方法中，执行测量光参数的连续感测。 将感测的测量光参数与预定义的设定值进行比较。 发出与设定值相关联的预定义参数范围的任何偏差。 该信号用于在照明装置上启动灯交换，其具有可以单独或分组地选择性地打开和关闭的多个灯。 还描述了一种相应的照明装置，其优选地自动执行灯交换。 其结果是识别关于测量精度和灯的最长可能利用最佳的灯变化的时间点，使得在连续操作期间保持一致的测量光质量可以可靠地保持在预定义的公差范围内 。

公开(公告)号：US07084965B2

公开(公告)日：2006-08-01

申请号：US10224415

申请日：2002-08-21

申请人： Joachim Wienecke ,  Kuno Backhaus

发明人： Joachim Wienecke ,  Kuno Backhaus

IPC分类号： G01N21/00 ,  G01N21/86 ,  G01N21/88 ,  G01R31/26

CPC分类号： G01N21/9501

摘要： The invention concerns an arrangement (1) for inspecting preferably unpatterned wafers, and comprises: a first optical inspection device (2) for examining reference wafers (R), which operates using image data processing methods and thereby recognizes defects on the reference wafers; a scattered-light measuring instrument (3) that is calibrated with the reference wafers (R) by defining at least one threshold value for the recognition of defects on wafers (W) to be inspected, and that comprises means (6) for recording the locations of threshold value exceedances for the wafers (W) to be inspected; and a second optical inspection device (4) for examination, only at those locations at which a threshold value exceedance is identified, of the wafers (W) to be inspected, which also comprises a classification device. The scattered-light measuring instrument (3) and the second optical inspection device (4) are arranged in one production line (P) as sequentially located stations. The first optical inspection device (2), on the other hand, is arranged outside the production line (P). A corresponding method is also described.

摘要翻译： 本发明涉及一种用于检查优选未图案化晶片的装置（1），包括：用于检查参考晶片（R）的第一光学检查装置（2），其使用图像数据处理方法进行操作，从而识别参考晶片上的缺陷; 通过限定用于识别要检查的晶片（W）上的缺陷的至少一个阈值，通过用参考晶片（R）校准的散射光测量仪器（3），并且包括用于记录 要检查的晶片（W）的阈值超出位置; 以及第二光学检查装置（4），仅在识别要检查的晶片（W）的阈值超标的那些位置处进行检查，其也包括分类装置。 散射光测量仪器（3）和第二光学检测装置（4）以一个生产线（P）的形式排列成顺序定位的工位。 另一方面，第一光学检查装置（2）布置在生产线（P）的外侧。 还描述了相应的方法。