Abstract:
The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate (91) with a plurality of individually shaped, controllable particle beamlets (118) which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility. According to the invention, this object is met in that a first aperture diaphragm array and a second aperture diaphragm array are constructed as multiple-format diaphragm arrays (41, 42) for generating particle beamlets (118) with different beam cross sections, and at least three multibeam deflector arrays (51, 52, 53) for individual deflection of the particle beamlets (118) are associated with the first multiple-format diaphragm array (41) and with the second multiple-format diaphragm array (42), wherein at least one multibeam deflector array (51) is arranged between the first multiple-format diaphragm array (41) and the second multiple-format diaphragm array (42) in order to generate different cross sections of the particle beamlets (118), at least a second multibeam deflector array (52) is arranged in the vicinity of the second multiple-format diaphragm array (42) in order to blank or deflect individual particle beamlets (118) into individual crossovers, and at least a third multibeam deflector array (53) is arranged downstream of the second multiple-format diaphragm array (42) at a distance of 10-20% of the distance to the next crossover (112) in order to generate different positions of the particle beamlets (118) on the substrate (91).
Abstract:
An apparatus (1) and a method for thin-layer metrology of semiconductor substrates (16) are disclosed. The semiconductor substrates (16) are delivered or transported to the apparatus (1) by means of at least one cassette element. A measurement unit (5) for thin-layer micrometrology is provided in the apparatus (1), the semiconductor substrates being conveyed by means of a transport mechanism (7) from the cassette element (3) to the measurement unit (5) for thin-layer micrometrology. A measurement unit (9) for thin-layer macrometrology is provided in the region of the transport mechanism (7) after the cassette element (3). By means of the measurement unit (9) for thin-layer macrometrology, measurement locations (22) on the semiconductor substrate that require more detailed examination in the measurement unit (5) for thin-layer micrometrology can rapidly be identified.
Abstract:
The invention refers to an optical measurement arrangement, in particular for layer thickness measurement and for ascertaining optical material properties such as refractive index, extinction factor, etc. of a specimen (P), having an illumination device (1) for emitting a measurement light beam (6), a beam splitter (8) for dividing the measurement light beam (6) into a specimen light beam (10) and a reference light beam (9), a measurement objective for directing the specimen light beam (10) onto a measurement location (M) on the surface of the specimen (P) and for acquiring the light reflected from the measurement location (M), and an analysis device (11) into which the reference light beam (9) and the specimen light beam (10) reflected from the specimen (P) are coupled in order to obtain information about the specimen (P), in particular about layer thicknesses present thereon. Light-guiding devices (23, 25) having a plurality of light-guiding fibers are provided for coupling the specimen light beam (10) and the reference light beam (9) into the analysis device (11). The result is to create a compact optical measurement arrangement that can be flexibly set up and is insensitive to disturbance, which is suitable in particular for automatic monitoring of continuous production processes, in particular in semiconductor chip manufacture.
Abstract:
The invention concerns an optical measurement arrangement, in particular for the examination of layer systems, and can include an illumination device having at least one illumination source for delivering a measurement light beam and coupling the measurement light beam into the beam path of a layer thickness measuring instrument. In such a measurement arrangement, the illumination device can be housed in a lamp housing that may be detachably connected to the remaining portion of the measurement arrangement via an installation element wherein illumination sources can be prealigned with respect to the beam path.
Abstract:
A method, apparatus, and software for guiding users during optical inspection and measurement of coated and noncoated substrates with an optical measurement system is provided. The optical measurement system incorporates an integrated recipe and data browser with sortable features to facilitate the optical inspection and measurement by the user.
Abstract:
The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate with a plurality of individually shaped, controllable particle beamlets which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility.
Abstract:
In a method for monitoring the measurement light emitted from an illumination apparatus for an optical measuring instrument, a continuous sensing of measurement light parameters is performed. The sensed measurement light parameters are compared to predefined setpoints. Any deviation from the predefined parameter ranges associated with the setpoints is signaled. This signal is used to initiate a lamp exchange on the illumination apparatus, which has multiple lamps that can be selectively switched on and off individually or in groups. Also described is a corresponding illumination apparatus that preferably performs a lamp exchange automatically. The result is to identify a point in time for a lamp change that is optimal with regard to measurement accuracy and the longest possible utilization of the lamps, so that a measurement light quality that remains consistent during continuous operation can reliably be maintained within predefined tolerance ranges.