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    SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME
    1.
    发明申请
    SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME 审中-公开
    太阳能电池基板和使用相同的太阳能电池

    公开(公告)号：US20140130859A1

    公开(公告)日：2014-05-15

    申请号：US14126115

    申请日：2012-06-08

    申请人： Kyoung-Bo Kim ,  Young-Jun Park ,  Je-Hoon Baek ,  Jong-Sang Kim

    发明人： Kyoung-Bo Kim ,  Young-Jun Park ,  Je-Hoon Baek ,  Jong-Sang Kim

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541

    摘要： The present invention relates to a solar cell substrate, and to a solar cell using same. The solar cell according to one embodiment of the present invention comprises: a lower substrate; and a lower electrode formed on the lower substrate. The lower electrode is formed of a Mo—X—Na three-component-system compound metal layer. Here, X may be one of Nb, Ni, Si, Ti, W, and Cr. The solar cell according to another embodiment of the present invention may comprise: a solar cell substrate including a lower substrate and a Mo—X—Na three-component-system compound metal layer that is a lower electrode formed on the lower substrate; a light-absorption layer formed on the solar cell substrate; a buffer layer formed on the light-absorption layer; a transparent window formed on the buffer layer; and an upper electrode formed on the transparent window.

    摘要翻译： 太阳能电池基板及其制造方法技术领域本发明涉及太阳能电池基板，太阳能电池。 根据本发明的一个实施例的太阳能电池包括：下基板; 和形成在下基板上的下电极。 下电极由Mo-X-Na三组分体系复合金属层形成。 这里，X可以是Nb，Ni，Si，Ti，W和Cr中的一种。 根据本发明的另一实施例的太阳能电池可以包括：太阳能电池基板，其包括下基板和Mo-X-Na三组分系统复合金属层，其是形成在下基板上的下电极; 形成在太阳能电池基板上的光吸收层; 形成在所述光吸收层上的缓冲层; 形成在缓冲层上的透明窗; 和形成在透明窗上的上电极。

    Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same
    3.
    发明授权
    Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same 有权
    薄膜晶体管，具有相同的有机发光二极管显示装置，平板显示装置和半导体装置及其制造方法

    公开(公告)号：US08334536B2

    公开(公告)日：2012-12-18

    申请号：US12048662

    申请日：2008-03-14

    申请人： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

    发明人： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

    IPC分类号： H01L29/04

    CPC分类号： H01L29/78675 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/66757

    摘要： A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.

    摘要翻译： 薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。 此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。 此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。 此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。

    CHEMICAL VAPOR DEPOSITION APPARATUS AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS
    5.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开
    化学蒸气沉积装置和等离子体增强化学气相沉积装置

    公开(公告)号：US20080295772A1

    公开(公告)日：2008-12-04

    申请号：US12122904

    申请日：2008-05-19

    申请人： Yong-Woo PARK ,  Kyoung-Bo Kim ,  Moo-Jin Kim

    发明人： Yong-Woo PARK ,  Kyoung-Bo Kim ,  Moo-Jin Kim

    IPC分类号： C23C16/44

    CPC分类号： C23C16/4401 ,  H01J37/32623 ,  H01J37/32697

    摘要： A chemical vapor deposition (CVD) apparatus and a plasma enhanced chemical vapor deposition (PECVD) apparatus that reduce the number of fine particles inside a chamber. The CVD and the PECVD apparatuses each include a chamber; a gas injection unit that injects a gas into the chamber; a gas exhaust unit that exhausts the gas to the outside of the chamber, and is positioned facing the gas injection unit; a film formation unit that incorporates a film formation region on which a film is formed from the gas, and is positioned between the gas injection unit and the gas exhaust unit; and a electrostatic induction unit, which is positioned around a region corresponding to the film formation region in order not to overlap with the film formation region, and is connected to a voltage source that is insulated from the chamber.

    摘要翻译： 化学气相沉积（CVD）装置和等离子体增强化学气相沉积（PECVD）装置，其减少室内细颗粒的数量。 CVD和PECVD装置各自包括室; 气体注入单元，其将气体注入到所述室中; 气体排出单元，其将气体排出到室的外部，并且被定位成面向气体注入单元; 成膜单元，其包括从气体形成有膜的成膜区域，并且位于气体注入单元和排气单元之间; 以及静电感应单元，其被设置在与成膜区域相对应的区域周围，以便不与成膜区域重叠，并且连接到与腔室绝缘的电压源。

    Organic light emitting diode display and method of manufacturing the same
    9.
    发明申请
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号：US20110049523A1

    公开(公告)日：2011-03-03

    申请号：US12805702

    申请日：2010-08-16

    申请人： Jong-Hyun Choi ,  June-Woo Lee ,  Kwang-Hae Kim ,  Kyoung-Bo Kim

    发明人： Jong-Hyun Choi ,  June-Woo Lee ,  Kwang-Hae Kim ,  Kyoung-Bo Kim

    IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L51/50

    CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/3262

    摘要： An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.

    摘要翻译： 一种OLED显示器，包括：基板主体; 第一栅电极和第二半导体层; 在第一栅电极和第二半导体层上的栅极绝缘层; 分别覆盖所述第一栅电极和所述第二半导体层的第一半导体层和第二栅电极; 蚀刻阻挡层接触第一半导体层的部分; 在所述第一半导体层和所述第二栅电极上的层间绝缘层，并且包括分别暴露所述多个蚀刻停止层的接触孔; 层间绝缘层上的第一源电极和第一漏电极，并且所述接触孔经由所述蚀刻停止层间接地连接到所述第一半导体层，或者直接连接到所述第一半导体层; 并且所述层间绝缘层上的第二源极和第二漏极连接到所述第二半导体层。