公开(公告)号：US06607982B1

公开(公告)日：2003-08-19

申请号：US09816847

申请日：2001-03-23

申请人： Ronald A. Powell ,  Sridhar K. Kailasam ,  E. Derryck Settles ,  Larry R. Lane

发明人： Ronald A. Powell ,  Sridhar K. Kailasam ,  E. Derryck Settles ,  Larry R. Lane

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76867 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention pertains to systems and methods for simultaneously producing a diffusion barrier and a seed layer used in integrated circuit metallization. This is achieved by initially depositing copper-magnesium (Cu—Mg) alloys with relatively high levels of Mg (>10 atomic %, which is equivalent to about >4 weight %). After the alloys are deposited, they self-form a magnesium oxide (MgO) based barrier layer at the substrate interface, thus eliminating the need for a separate operation for barrier deposition. The migration of Mg to the substrate interface leaves the remainder of the film relatively pure Cu.

摘要翻译： 本发明涉及同时制造用于集成电路金属化的扩散阻挡层和籽晶层的系统和方法。 这通过最初沉积具有相对高水平的Mg（> 10原子％，相当于约> 4重量％）的铜 - 镁（Cu-Mg）合金来实现。 在合金沉积后，它们在衬底界面处自形成基于氧化镁（MgO）的阻挡层，因此不需要单独的操作用于阻挡层沉积。 Mg向衬底界面的迁移使膜的其余部分相对纯Cu。

公开(公告)号：US4796562A

公开(公告)日：1989-01-10

申请号：US3516

申请日：1987-01-15

申请人： Daniel L. Brors ,  Larry R. Lane ,  Mark W. Goldsborough ,  Jason M. Samsel ,  Max van Mastrigt ,  Robert Foster

发明人： Daniel L. Brors ,  Larry R. Lane ,  Mark W. Goldsborough ,  Jason M. Samsel ,  Max van Mastrigt ,  Robert Foster

IPC分类号： H01L21/285 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  H01L21/205 ,  F27D11/00

CPC分类号： C23C16/4411 ,  C23C16/46 ,  C23C16/463 ,  C23C16/481 ,  C23C16/54

摘要： In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to a temperature in excess of 1000.degree. C. rapidly. The radiant heat source includes cylindrical lamps placed in a radial pattern to improve heating uniformity. In the selective tungsten process the temperature of the wafer is raised from ambient to about 600.degree. C. while flowing process gases. At the upper temperature range the heating source can be rapidly cycled on and off to improve the uniformity of coating.

摘要翻译： 在用于涂覆半导体晶片的化学气相沉积设备中，将晶片面朝下地保持在反应室中。 在晶片上方和反应室外部的辐射热源。 通过可伸缩夹具将晶片保持在环形卡盘上，将晶片从背面快速加热至超过1000℃的温度。 辐射热源包括以放射状图案放置以提高加热均匀性的圆柱形灯。 在选择性钨工艺中，流动工艺气体时，晶片的温度从环境温度升至约600℃。 在较高温度范围内，加热源可以快速循环开启和关闭，以提高涂层的均匀性。