Latch assembly for a ramp of a vehicle trailer
    6.
    发明申请
    Latch assembly for a ramp of a vehicle trailer 失效
    用于车辆拖车坡道的闩锁组件

    公开(公告)号:US20050063810A1

    公开(公告)日:2005-03-24

    申请号:US10667554

    申请日:2003-09-22

    申请人: Larry Wagner

    发明人: Larry Wagner

    IPC分类号: B60P1/43 B60P1/00

    CPC分类号: B60P1/431

    摘要: A latch assembly is provided for selectively maintaining a ramp of a trailer in a storage position. The latch assembly includes a mounting tube mounted to the underside of the trailer and a clamp tube operatively connected to the mounting tube by a plurality of link arms. The clamp tube is vertically movable between an interfering position wherein the clamp tube is vertically spaced from the mounting tube and interfering portions of the link arm intersect the plane in which the ramp of the trailer lies and a non-interfering position where the clamp tube is adjacent the mounting tube.

    摘要翻译: 提供了一种闩锁组件,用于选择性地将拖车的斜坡保持在存储位置。 闩锁组件包括安装在拖车下侧的安装管和通过多个连杆臂可操作地连接到安装管的夹紧管。 夹紧管可在干涉位置之间垂直移动,其中夹紧管与安装管垂直间隔开,并且连杆臂的阻碍部分与拖车斜坡所在的平面相交,夹紧管是夹紧管的非干涉位置 靠近安装管。

    METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER
    8.
    发明申请
    METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER 审中-公开
    用于控制WAFER中图案特征尺寸变化的方法和系统

    公开(公告)号:US20100279213A1

    公开(公告)日:2010-11-04

    申请号:US12778994

    申请日:2010-05-12

    IPC分类号: G03F7/20 G03B27/52

    摘要: Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step.

    摘要翻译: 提供了用于控制跨晶片的图案化特征的尺寸变化的方法和系统。 一种方法包括在光刻过程期间测量跨越晶片的多于一个位置处的抗蚀剂中形成的潜像的特性。 该方法还包括响应于特性来改变光刻工艺的参数,以减小通过光刻工艺在晶片上形成的图案化特征的尺寸变化。 改变参数补偿在光刻工艺的后曝光烘烤步骤期间晶片曝光的温度中的非时间变化的空间变化以及后曝光烘烤步骤的附加变化。