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公开(公告)号:US20090114945A1
公开(公告)日:2009-05-07
申请号:US12066742
申请日:2006-09-12
IPC分类号: H01L29/82
CPC分类号: H01L43/08 , H01F10/3286
摘要: A spintronics element comprises two ferromagnetic layers without a non-magnetic interlayer between them. The two ferromagnetic layers may be independently switched by various means such as but not limited to applying one or more external magnetic fields, and/or employing current induced switching, and/or applying optical spin-pumping.
摘要翻译: 自旋电子元件包括两个铁磁层,它们之间没有非磁性中间层。 两个铁磁层可以通过诸如但不限于施加一个或多个外部磁场和/或采用电流感应开关和/或施加光学自旋泵送的各种手段来独立地切换。
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公开(公告)号:US20080261155A1
公开(公告)日:2008-10-23
申请号:US11579652
申请日:2005-05-06
IPC分类号: G03F7/00
CPC分类号: H01L21/7682 , H01L21/76885 , H01L23/5221 , H01L2924/0002 , H01L2924/00
摘要: A lithographic method of producing an air-bridge (10) comprises the steps of providing a sequence of a bottom resist layer (2), a shield layer (3) and a top resist layer (4), removing the top resist layer (4) and subsequently the shield layer (3) in the area of the bridge span, removing the bottom resist layer (2) in the area of the pillars of the bridge, forming a metal layer (8) on the sequence of layers, and removing the resist layers (2, 4) together with shield layer portions (3) and metal-coated portions (9) to create the air-bridge.
摘要翻译: 制造空气桥(10)的光刻方法包括以下步骤:提供底层抗蚀剂层(2),屏蔽层(3)和顶部抗蚀剂层(4)的顺序,去除顶部抗蚀剂层(4) ),随后在桥跨范围的区域中的屏蔽层(3),在桥的柱的区域中移除底抗蚀剂层(2),在层序上形成金属层(8),并且去除 抗蚀剂层(2,4)与屏蔽层部分(3)和金属涂覆部分(9)一起形成空气桥。
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3.
公开(公告)号:US20090009914A1
公开(公告)日:2009-01-08
申请号:US11579655
申请日:2005-05-03
IPC分类号: G11B5/33
CPC分类号: H01L43/08
摘要: A spin-valve structure is provided, illustrating the layer structure used for the magnetic tunnel junction, by a method comprising the steps of providing a substrate, growing a ferromagnetic layer on the substrate, growing a tunnel barrier layer on the ferromagnetic layer, providing a first non-magnetic metallic contact on the ferromagnetic layer and providing a second non-magnetic metallic contact for the single ferromagnetic layer. Beside such a single sided structure a double-sided structure can be provided having e.g. a Ga0.94Mn0.06As/undoped GaAs/Ga0.94Mn0.06As trilayer structure on top of a semi-insulating GaAs substrate and an undoped LT-GaAs buffer layer. There is an inner square contact and a surrounding electrical back contact. This sample structure makes it possible to perform two-probe magnetoresistance measurements through both ferromagnets and the GaAs tunnel barrier. The resistance of the device is fully dominated by the vertical tunneling process through the tunnel barrier.
摘要翻译: 提供了自旋阀结构,示出了用于磁性隧道结的层结构,其方法包括以下步骤:提供衬底,在衬底上生长铁磁层,在铁磁层上生长隧道势垒层, 在铁磁层上的第一非磁性金属接触并为单个铁磁层提供第二非磁性金属接触。 除了这种单面结构之外,可以提供双面结构,例如具有双面结构。 在半绝缘GaAs衬底和未掺杂的LT-GaAs缓冲层的顶部上的Ga 0.94Mn0.06As /未掺杂的GaAs / Ga0.94Mn0.06As三层结构。 有一个内部正方形接触和一个周围的电气背面接触。 该样品结构使得可以通过铁磁体和GaAs隧道势垒进行双探针磁阻测量。 该装置的电阻完全由通过隧道屏障的垂直隧道过程控制。
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公开(公告)号:US20080277645A1
公开(公告)日:2008-11-13
申请号:US11579653
申请日:2005-05-06
CPC分类号: H01F10/193 , B82Y25/00 , H01F1/009 , H01F1/402
摘要: A semiconductor magnetic body comprises a layer (11 15) intended to trap electrons, wherein said layer (11 15) is surrounded on both sides by a magnetic layer (16, 17). This leads to the creation of ferromagnetic character in spatially limited regions of electronic elements such as but not limited to quantum dots, where this creation is achieved using magnetic materials which do not compositionally form part of the region but are rather contained in the zone or zones adjacent to the region.
摘要翻译: 半导体磁体包括用于捕获电子的层(1115),其中所述层(1115)在两侧被磁性层(16,17)包围。 这导致在诸如但不限于量子点的电子元件的空间有限的区域中产生铁磁性,其中使用不组成地形成区域的一部分但是被包含在区域或区域中的磁性材料来实现 毗邻该地区。
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公开(公告)号:US5130765A
公开(公告)日:1992-07-14
申请号:US667739
申请日:1991-03-11
IPC分类号: H01L29/66 , H01L29/76 , H01L29/772 , H01L29/80
CPC分类号: H01L29/772 , H01L29/7606
摘要: An element for use in an electrical circuit includes sub-region (11) and a second sub-region (12), which regions can contain a charge carrier gas (6) at least during operation and are separated from one another by an insulation zone (13). The insulaton zone (13) is locally interrupted by a barrier zone (15) which presents a potential barrier to the charge carriers. The first sub-region (11) is provided with a first connection (21) for deriving the potential from it. The second sub-region (12) is provided with two connections (22, 23) by means of which a current (I) can be passed through the second sub-region (12). The potential of the first sub-region (11) is found to be proportional to at least substantially the square of the current (I) passed through the second sub-region. This renders the element particularly suitable for an electrical circuit in which such a proportionality is desired.
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6.
公开(公告)号:US20080316576A1
公开(公告)日:2008-12-25
申请号:US11997758
申请日:2006-08-04
CPC分类号: G02F1/0136 , B82Y10/00 , G02F2001/01791 , G06N10/00
摘要: A novel and efficient method for polarization conversion, particularly from linear polarization to circular polarization, and, importantly, vice versa, is obtained using shapeanisotropic self-assembled quantum dots, which, having the advantage of extremely small size (nanometer scale), may be readily incorporated into photonic crystals and/or other optical components. Such devices also have the advantage of working in the absence of an applied magnetic field. Such devices also, when a voltage bias is applied, can be used to manipulate electron spin by manipulating light polarization in the same circuit, and vice versa. This permits a high degree of control for either or both of these in spintronics and/or optical devices, the biased quantum dot being used as a nanometer scale electro-optic modulator. Components utilizing the method and/or devices may be used as part of highly compact optical computing networks and/or spintronics systems for e.g., information processing, quantum computation, holography, and data recording.
摘要翻译: 使用具有极小尺寸(纳米尺度)的优点的形状各向异性自组装量子点,可以获得一种用于偏振转换的新颖且有效的方法,特别是从线偏振到圆偏振,并且重要的是反之亦然。 容易地结合到光子晶体和/或其它光学部件中。 这样的器件还具有在没有施加的磁场的情况下工作的优点。 当施加电压偏置时,这种器件也可以用于通过操纵同一电路中的光偏振来操纵电子自旋,反之亦然。 这允许在自旋电子学和/或光学器件中的这些中的任一个或两者的高度控制,偏置量子点用作纳米级电光调制器。 利用该方法和/或设备的部件可以用作例如信息处理,量子计算,全息术和数据记录的高度紧凑的光学计算网络和/或自旋电子系统的一部分。
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